Two-Dimensional Piezoelectric Semiconductor Materials with C
發(fā)布時間:2021-10-16 16:43
在非中心對稱材料中,利用應(yīng)變會產(chǎn)生壓電電荷,壓電效應(yīng)已經(jīng)廣泛應(yīng)用于機(jī)電驅(qū)動、傳感和能量采集。傳統(tǒng)的壓電材料(如PZT或PVDF)一般都是絕緣體,不適用于功能電子/光電器件。壓電材料中用于調(diào)諧載流子的應(yīng)變誘導(dǎo)的壓電電荷長期以來一直被忽視。二維壓電半導(dǎo)體是具有壓電和半導(dǎo)體特性的二維材料。這些材料具有非中心對稱結(jié)構(gòu),在納米尺度、機(jī)電框架和光電器件中表現(xiàn)出很高的潛力。在光電子器件、能量收集和電子學(xué)領(lǐng)域,人們對這種二維壓電半導(dǎo)體材料的興趣正在發(fā)展。纖鋅礦或閃鋅礦結(jié)構(gòu)的半導(dǎo)體材料(如Zn O、Ga N和Cd S)也具有壓電性,但由于它們的壓電系數(shù)較小,不能夠像PZT一樣在壓電致動器和傳感器等方面廣泛應(yīng)用。壓電和半導(dǎo)體的耦合引起了高性能器件應(yīng)用以及新奇的物理現(xiàn)象,因此這些研究引起了壓電電子學(xué)和壓電光電子學(xué)的一個新領(lǐng)域。壓電電子學(xué)和壓電光電子學(xué)的基本原則在于應(yīng)變引起的極化電荷在界面能有效控制勢壘高度,通過局域的節(jié)或接觸來提高電荷載流子輸運(yùn),對所應(yīng)用器件中自由載流子的濃度分布和界面電子電荷態(tài)的表現(xiàn)出了很大的影響。本文采用了壓電和壓電光電的基本物理原理,以二維壓電半導(dǎo)體材料為基礎(chǔ),結(jié)合壓電與半導(dǎo)體的特性,...
【文章來源】:電子科技大學(xué)四川省 211工程院校 985工程院校 教育部直屬院校
【文章頁數(shù)】:100 頁
【學(xué)位級別】:博士
【文章目錄】:
摘要
ABSTRACT
Chapter 1 Introduction
1.1 Motivation
1.2 Piezoelectric Property
1.2.1 Piezoelectric Charges
1.3 Piezoelectric Semiconductor
1.3.1 In-plane and out-of-plane piezoelectric semiconductor
1.4 Thesis Scope
1.5 Dissertation Outline and Organization
Chapter 2 Piezotronics and Piezo-phototronics Effects
2.1 Basics of Piezotronics
2.1.1 Piezoelectric Charges on Metal-Semiconductor Contact
2.1.2 Basic theory of piezotronics
2.2 Basics of piezo-phototronics
2.2.1 Theoretical framework of Piezophototronic effect in solar cell
2.3 Practical application of piezo-phototronics in optoelectronic devices
2.3.1 Piezo-phototronic effect on a solar cell
2.3.2 Photodetector
2.3.3 LEDs
2.4 Device applications of two-dimensional piezoelectric semiconductor
2.5 Summary
Chapter 3 Piezo-phototronic Single Junction solar cell
3.1 Two Dimensional(2D)Monochalcogenides material(s)Solar cell
3.2 Formulation of2-D materials for piezo-phototronic solar cell
3.3 Results and discussions
3.4 Third Generation Semiconductor Material Piezophototronic Solar cell
3.5 Conclusion
Chapter 4 Piezo-phototronic Multi-Junction Solar Cells
4.1 Concept of piezo-phototronic multijunction solar cell
4.2 Model of multijunction solar cell based on detailed balance limit
4.3 Analytical model of 2D piezo-phototronic multijunction solar cell
4.4 Results and Discussion
4.5 Conclusion
Chapter 5 Conclusions
5.1 Conclusion
5.2 Future Prospective
Acknowledgements
References
Research Results Obtained During the Study for Doctoral Degree
【參考文獻(xiàn)】:
期刊論文
[1]基于第三代半導(dǎo)體的壓電電子學(xué)和壓電光電子學(xué)器件[J]. 朱來攀,翟俊宜,王中林. 科學(xué)通報. 2020(25)
本文編號:3440157
【文章來源】:電子科技大學(xué)四川省 211工程院校 985工程院校 教育部直屬院校
【文章頁數(shù)】:100 頁
【學(xué)位級別】:博士
【文章目錄】:
摘要
ABSTRACT
Chapter 1 Introduction
1.1 Motivation
1.2 Piezoelectric Property
1.2.1 Piezoelectric Charges
1.3 Piezoelectric Semiconductor
1.3.1 In-plane and out-of-plane piezoelectric semiconductor
1.4 Thesis Scope
1.5 Dissertation Outline and Organization
Chapter 2 Piezotronics and Piezo-phototronics Effects
2.1 Basics of Piezotronics
2.1.1 Piezoelectric Charges on Metal-Semiconductor Contact
2.1.2 Basic theory of piezotronics
2.2 Basics of piezo-phototronics
2.2.1 Theoretical framework of Piezophototronic effect in solar cell
2.3 Practical application of piezo-phototronics in optoelectronic devices
2.3.1 Piezo-phototronic effect on a solar cell
2.3.2 Photodetector
2.3.3 LEDs
2.4 Device applications of two-dimensional piezoelectric semiconductor
2.5 Summary
Chapter 3 Piezo-phototronic Single Junction solar cell
3.1 Two Dimensional(2D)Monochalcogenides material(s)Solar cell
3.2 Formulation of2-D materials for piezo-phototronic solar cell
3.3 Results and discussions
3.4 Third Generation Semiconductor Material Piezophototronic Solar cell
3.5 Conclusion
Chapter 4 Piezo-phototronic Multi-Junction Solar Cells
4.1 Concept of piezo-phototronic multijunction solar cell
4.2 Model of multijunction solar cell based on detailed balance limit
4.3 Analytical model of 2D piezo-phototronic multijunction solar cell
4.4 Results and Discussion
4.5 Conclusion
Chapter 5 Conclusions
5.1 Conclusion
5.2 Future Prospective
Acknowledgements
References
Research Results Obtained During the Study for Doctoral Degree
【參考文獻(xiàn)】:
期刊論文
[1]基于第三代半導(dǎo)體的壓電電子學(xué)和壓電光電子學(xué)器件[J]. 朱來攀,翟俊宜,王中林. 科學(xué)通報. 2020(25)
本文編號:3440157
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