【摘要】：氧化還原類阻變存儲(chǔ)器是下一代高速、高密度和低功耗非易失性存儲(chǔ)器的有力競爭者,對其機(jī)理的探討、性能的優(yōu)化和應(yīng)用的拓展一直以來都倍受科學(xué)界和工業(yè)界關(guān)注。本文采用旋涂法制備了P3HT:PCBM和PEDOT:PSS薄膜,采用射頻磁控濺射技術(shù)制備了SiO_2和Ta_2O_5薄膜,基于這些薄膜構(gòu)建了氧化還原類阻變存儲(chǔ)器,系統(tǒng)表征了器件的阻變性能,重點(diǎn)探討了金屬導(dǎo)電細(xì)絲的生長動(dòng)力學(xué)過程和二元氧化物介質(zhì)阻變特性的可控調(diào)節(jié),并探索了邏輯運(yùn)算在阻變存儲(chǔ)器中的多樣化實(shí)現(xiàn)途徑。選用不同電極材料和存儲(chǔ)介質(zhì)研究了氧化還原類阻變存儲(chǔ)器中金屬導(dǎo)電細(xì)絲的生長動(dòng)力學(xué)過程,成功獲得了兩種不同于傳統(tǒng)的由惰性電極朝向活性電極的金屬導(dǎo)電細(xì)絲生長模式,即Cu/P3HT:PCBM/ITO器件中由活性電極朝向惰性電極的生長模式和Ag/PEDOT:PSS/Pt器件中由存儲(chǔ)介質(zhì)中間向兩端電極逐漸延伸的生長模式。理論分析和計(jì)算機(jī)模擬表明,金屬導(dǎo)電細(xì)絲的生長模式同時(shí)受陽離子遷移和導(dǎo)電細(xì)絲形核兩個(gè)過程的影響。當(dāng)陽離子遷移過程起主導(dǎo)作用時(shí),金屬導(dǎo)電細(xì)絲的生長模式為由活性電極朝向惰性電極;反之,當(dāng)導(dǎo)電細(xì)絲形核過程起主導(dǎo)作用時(shí),金屬導(dǎo)電細(xì)絲的生長模式為由惰性電極朝向活性電極。當(dāng)這兩個(gè)過程相互競爭、共同起作用時(shí),金屬導(dǎo)電細(xì)絲的生長模式為由存儲(chǔ)介質(zhì)中間向兩端電極逐漸延伸。實(shí)驗(yàn)還通過優(yōu)化測試參數(shù)以調(diào)控金屬導(dǎo)電細(xì)絲的演化過程,在P3HT:PCBM和SiO_2存儲(chǔ)介質(zhì)中觀測到了Ag導(dǎo)電細(xì)絲的電導(dǎo)量子化現(xiàn)象。采用n-Si半導(dǎo)體電極和插入超薄的Ta納米層調(diào)控了Ta_2O_5薄膜的阻變特性,成功制備了開關(guān)比高達(dá)約104倍、整流比高達(dá)約600倍的Pt/Ta_2O_5/n-Si自整流阻變存儲(chǔ)器,其自整流效應(yīng)起源于氧空位導(dǎo)電細(xì)絲和n-Si半導(dǎo)體電極間的肖特基接觸,能夠克服最大容量為212×212(約44kbit)的存儲(chǔ)陣列的漏電流;成功實(shí)現(xiàn)了10nm厚Ta_2O_5薄膜從本征無極性阻變特性到自限流雙極性阻變特性(2nm厚Ta插入層時(shí))和互補(bǔ)型阻變特性(4nm厚Ta插入層時(shí))的可控轉(zhuǎn)變,同時(shí)降低了操作電壓和電流,提高了阻變均一性。為了提升阻變存儲(chǔ)器的邏輯運(yùn)算能力,理論設(shè)計(jì)和實(shí)驗(yàn)證明了一種含有內(nèi)在可反轉(zhuǎn)二極管的新型互補(bǔ)型阻變存儲(chǔ)器,并在單個(gè)Ta/Ta_2O_5/Pt/Ta_2O_5/Ta新型互補(bǔ)型阻變存儲(chǔ)器中,證實(shí)了基于內(nèi)在可反轉(zhuǎn)二極管和互補(bǔ)型阻變特性分別實(shí)現(xiàn)所有16種二元布爾邏輯運(yùn)算的可行性。
[Abstract]:Redox resistive memory is a powerful competitor for the next generation of high-speed, high-density and low-power non-volatile memory. The discussion on its mechanism, performance optimization and application expansion have always attracted the attention of the scientific community and industry. In this paper, P3HT:PCBM and PEDOT:PSS thin films were prepared by rotating coating method, and SiO_2 and Ta_2O_5 thin films were prepared by RF magnetron sputter. Based on these films, redox resistive memory was constructed. The resistive properties of the devices were systematically characterized. The growth kinetics of metal conductive filaments and the controllable adjustment of resistance characteristics of binary oxide media were discussed. The diversified implementation of logic operation in resistive memory is also explored. The growth kinetics of metal conductive filaments in redox impedance memory was studied by using different electrode materials and storage media. Two kinds of metal conductive filaments growth modes, which were different from the traditional metal conductive filaments from the lazy electrode to the active electrode, were successfully obtained. That is, the growth mode from the active electrode to the lazy electrode in the Cu/P3HT:PCBM/ITO device and the growth mode from the middle of the storage medium to the two ends of the electrode in the Ag/PEDOT:PSS/Pt device. Theoretical analysis and computer simulation show that the growth mode of metal conductive filaments is affected by both cationic migration and conductive filaments nucleation. When the cationic migration process plays a leading role, the growth mode of metal conductive filaments is that the active electrode is oriented to the lazy electrode; on the contrary, when the nucleation process of conductive filaments plays a leading role, the growth mode of metal conductive filaments is that the lazy electrode is oriented to the active electrode. When the two processes compete with each other and work together, the growth mode of metal conductive filaments extends gradually from the middle of the storage medium to the electrodes at both ends. The conductivity quantization of Ag conductive filaments was observed in P3HT:PCBM and SiO_2 storage media by optimizing the test parameters to regulate the evolution of conductive filaments. The resistance characteristics of Ta_2O_5 thin films were regulated by n-Si semiconductor electrode and ultra-thin Ta nanolayer. Pt/Ta_2O_5/n-Si self-rectifying resistive memory with switching ratio of about 104 times and rectifier ratio of about 600 times was successfully fabricated. The self-rectifying effect originated from Schottky contact between oxygen vacancy conductive filaments and n-Si semiconductor electrodes. It can overcome the leakage current of the storage array with a maximum capacity of 212 脳 212 (about 44kbit). The controllable transformation of 10 nm thick Ta _ 2O_5 thin films from intrinsic non-polar resistance to self-limiting current-limiting bipolar resistance (when 2nm thick Ta is inserted into the layer) and complementary resistance (when 4nm thick Ta is inserted into the layer) is successfully realized. At the same time, the operating voltage and current are reduced, and the resistance uniformity is improved. In order to improve the logic operation ability of resistive memory, a new type of complementary resistive memory with intrinsic reversible diode is designed theoretically and experimentally. in a single Ta/Ta_2O_5/Pt/Ta_2O_5/Ta new complementary resistive memory, the feasibility of realizing all 16 binary Boolean logic operations based on intrinsic reversible diode and complementary resistive characteristic is verified.
【學(xué)位授予單位】：清華大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2016
【分類號(hào)】：TP333

【相似文獻(xiàn)】

相關(guān)期刊論文 前1條

1 林一帆;;微波屏蔽新材料——化纖鍍金屬導(dǎo)電布[J];電子技術(shù);1981年07期

相關(guān)重要報(bào)紙文章 前1條

1 浙 生;神奇金屬導(dǎo)電不變形消除飛行隱患[N];大眾科技報(bào);2003年

相關(guān)博士學(xué)位論文 前1條

1 高雙;氧化還原類阻變存儲(chǔ)器的機(jī)理探討和性能調(diào)控及邏輯應(yīng)用[D];清華大學(xué);2016年

，

本文編號(hào)：2509576