微波毫米波高性能無源元件的研究
發(fā)布時(shí)間：2019-01-30 11:34
【摘要】：小型化高集成度是現(xiàn)代微波毫米波通信技術(shù)的發(fā)展趨勢(shì),而射頻無源元件是制約其小型化的主要因素之一。濾波器和雙工器是微波毫米波系統(tǒng)中的主要無源元件,其小型化具有重要意義。本文主要針對(duì)小型化高性能微波毫米波濾波器和雙工器開展研究,并將之應(yīng)用于改善振蕩器的噪聲性能。論文的主要工作如下：1.提出了一種引入傳輸零點(diǎn)的方法,設(shè)計(jì)并研制了V波段兩級(jí)和四級(jí)帶通濾波器。引入的兩個(gè)傳輸零點(diǎn)(TZs)可由擾動(dòng)槽單獨(dú)控制,分別位于61.25 GHz和68.6 GHz,而其它TZs仍然位于上阻帶。雙腔濾波器的分?jǐn)?shù)帶寬為2.5%,插入損耗為1.35 dB,回波損耗小于20 dB,帶外抑制約65 dB。相關(guān)研究成果已發(fā)表在Journal of Infrared and Millimeter Waves (SCI源刊)。2.提出并研制了一種毫米波高選擇性高隔離度雙工器。測(cè)試結(jié)果表明,插入損耗小于1.37 dB,隔離度為70 dB。相關(guān)研究成果已發(fā)表在IEEE Microwave and Wireless Components Letters (SCI源刊)。3.基于基片集成波導(dǎo)(SIW)技術(shù),提出了一種產(chǎn)生和控制TZs的擾動(dòng)方法并設(shè)計(jì)和研制了平面集成雙模濾波器。采用標(biāo)準(zhǔn)的單層PCB工藝和0.254 mm厚的Rogers5880基片制作了單腔和雙腔SIW帶通濾波器。相關(guān)研究成果已在IEEE 2015 Asia-Pacific Microwave Conference會(huì)議上發(fā)表。4.將SIW高選擇性濾波器用于改善X波段振蕩器的相位噪聲(PN)性能。采用雙腔高選擇性SIW濾波器的振蕩器PN比單腔的PN從-106.2dBc/Hz@100KHz改善到了-114.1dBc/Hz@100KHz,相關(guān)研究成果已投稿至IEEE Microw. and Wireless Comp. Letters。
[Abstract]:Miniaturization and high integration are the development trend of modern microwave and millimeter wave communication technology, and RF passive components are one of the main factors restricting the miniaturization of microwave and millimeter wave communication technology. Filter and Duplexer are the main passive components in microwave millimeter wave system, and their miniaturization is of great significance. In this paper, miniaturization and high performance microwave millimeter wave filters and duplexers are studied and applied to improve the noise performance of the oscillator. The main work of this paper is as follows: 1. This paper presents a method of introducing transmission zeros and designs and develops two and four stages bandpass filters in V band. The two introduced transmission zeros (TZs) can be controlled separately by the perturbation channel at 61.25 GHz and 68.6 GHz, respectively, while the other TZs is still in the upstop band. The fractional bandwidth of the dual-cavity filter is 2.5 and the insertion loss is 1.35 dB,. The echo loss is less than 20 dB,. The out-of-band suppression is about 65 dB.. The related research results have been published in the Journal of Infrared and Millimeter Waves (SCI Source). A millimeter wave high selectivity high isolation duplex is proposed and developed. The test results show that the insertion loss is less than 1. 37 dB, and the isolation is 70 dB.. Related research results have been published in the IEEE Microwave and Wireless Components Letters (SCI Source). Based on the substrate integrated waveguide (SIW) technique, a perturbation method for generating and controlling TZs is proposed, and a planar integrated dual-mode filter is designed and developed. Standard single-layer PCB process and 0.254 mm thick Rogers5880 substrate are used to fabricate single-cavity and dual-cavity SIW bandpass filters. The related research results were presented at the IEEE 2015 Asia-Pacific Microwave Conference. 4. 4. SIW high selectivity filter is used to improve the phase noise (PN) performance of X band oscillator. The oscillator PN with double cavity high selectivity SIW filter is improved from-106.2dBc/Hz@100KHz to -114.1 dBc / Hz @ 100KHz compared with single cavity PN. The related research results have been submitted to IEEE Microw.. And Wireless Comp. Letters.
【學(xué)位授予單位】：東南大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2016
【分類號(hào)】：TN631.2;TN713
，
本文編號(hào)：2418089
[Abstract]:Miniaturization and high integration are the development trend of modern microwave and millimeter wave communication technology, and RF passive components are one of the main factors restricting the miniaturization of microwave and millimeter wave communication technology. Filter and Duplexer are the main passive components in microwave millimeter wave system, and their miniaturization is of great significance. In this paper, miniaturization and high performance microwave millimeter wave filters and duplexers are studied and applied to improve the noise performance of the oscillator. The main work of this paper is as follows: 1. This paper presents a method of introducing transmission zeros and designs and develops two and four stages bandpass filters in V band. The two introduced transmission zeros (TZs) can be controlled separately by the perturbation channel at 61.25 GHz and 68.6 GHz, respectively, while the other TZs is still in the upstop band. The fractional bandwidth of the dual-cavity filter is 2.5 and the insertion loss is 1.35 dB,. The echo loss is less than 20 dB,. The out-of-band suppression is about 65 dB.. The related research results have been published in the Journal of Infrared and Millimeter Waves (SCI Source). A millimeter wave high selectivity high isolation duplex is proposed and developed. The test results show that the insertion loss is less than 1. 37 dB, and the isolation is 70 dB.. Related research results have been published in the IEEE Microwave and Wireless Components Letters (SCI Source). Based on the substrate integrated waveguide (SIW) technique, a perturbation method for generating and controlling TZs is proposed, and a planar integrated dual-mode filter is designed and developed. Standard single-layer PCB process and 0.254 mm thick Rogers5880 substrate are used to fabricate single-cavity and dual-cavity SIW bandpass filters. The related research results were presented at the IEEE 2015 Asia-Pacific Microwave Conference. 4. 4. SIW high selectivity filter is used to improve the phase noise (PN) performance of X band oscillator. The oscillator PN with double cavity high selectivity SIW filter is improved from-106.2dBc/Hz@100KHz to -114.1 dBc / Hz @ 100KHz compared with single cavity PN. The related research results have been submitted to IEEE Microw.. And Wireless Comp. Letters.
【學(xué)位授予單位】：東南大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2016
【分類號(hào)】：TN631.2;TN713
，
本文編號(hào)：2418089
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