【摘要】：微電子技術(shù)與納米科技的快速發(fā)展不斷推動著以光刻為首的微納加工技術(shù)的進步,使其已經(jīng)成為衡量國家科技核心競爭力的重要標(biāo)志。作為光刻的關(guān)鍵單元技術(shù)之一,對準(zhǔn)技術(shù)將直接影響套刻結(jié)果。當(dāng)下,最先進光刻機的特征尺寸已經(jīng)達到了10nm,考慮到對準(zhǔn)精度需至少達到光刻分辨力的1/10這一要求,超高精度的光刻對準(zhǔn)方法受到了越來越多的重視�；谀獱枟l紋的納米光刻對準(zhǔn)方法憑借其超高的對準(zhǔn)精度,良好的可靠性和魯棒性被認(rèn)為是一項極具應(yīng)用潛力的對準(zhǔn)技術(shù)。目前,已經(jīng)有許多關(guān)于該技術(shù)的研究成果與文章被報道,但是這些工作都集中在如何提高測量的靈敏度與準(zhǔn)確度,而很少有報道涉及環(huán)境因素,尤其是對準(zhǔn)標(biāo)記的空間姿態(tài)、照明光束的質(zhì)量和圖像處理算法等因素,對光刻對準(zhǔn)精度的影響。事實上,莫爾條紋的相位分布與這些因素緊密相連。因此,本論文將主要研究對這些環(huán)境因素是如何影響莫爾條紋的相位分布,進而影響對準(zhǔn)精度�，F(xiàn)將本文所涉及的主要研究內(nèi)容包括歸納如下:1.綜述現(xiàn)行的典型光刻對準(zhǔn)技術(shù),并分析其優(yōu)缺點。旨在挖掘其優(yōu)勢的同時引入光學(xué)干涉測量,并提出基于莫爾條紋的納米光刻對準(zhǔn)方法。再通過理論分析和公式推導(dǎo),指出莫爾條紋對微小位移的放大作用,以及其相位信息與對準(zhǔn)偏差之間的對應(yīng)關(guān)系。據(jù)此,我們將設(shè)計一套粗精結(jié)合的光刻對準(zhǔn)標(biāo)記,并給出其對應(yīng)的圖像處理算法和相位提取算法;2.針對精對準(zhǔn)方案對高精度和實時性的要求,本文將提出一種基于頻譜的加窗傅里葉變換方法,并將利用Maltlab的Window DesignAnalysis Tool平臺分析其在提取莫爾條紋相位信息方面的性能表現(xiàn),其中主要包括抑制頻譜泄露的能力和不同窗口函數(shù)的性能比較。3.分析面內(nèi)傾斜對莫爾條紋分布的影響,建立相應(yīng)的數(shù)理模型,并通過數(shù)值仿真的方法對提出的理論模型進行驗證。在此基礎(chǔ)上,進一步給出針對該誤差源的矯正方法,然后通過仿真研究比較了其應(yīng)用范圍和性能表現(xiàn)。結(jié)果表明,針對面內(nèi)傾斜的誤差矯正方法可達到實現(xiàn)10-6rad量級矯正精度。4.分析光束準(zhǔn)直性對莫爾條紋分布的影響,建立相應(yīng)的數(shù)理模型,然后通過數(shù)值仿真的方法對提出的理論模型進行驗證,最后在此基礎(chǔ)上給出針對該誤差源的矯正方法。針對矯正算法中對光束準(zhǔn)直性的實時性測量要求,提出了基于差動光柵和泰伯效應(yīng)的光束準(zhǔn)直性測量方法,結(jié)果表明該方法的測量精度可以達到10-8rad級別。5.在理論研究的基礎(chǔ)上,搭建了掩模-硅片對準(zhǔn)實驗系統(tǒng)�；谠搶嶒炂脚_,采用了步進實驗和重復(fù)性實驗來驗證所提出的對準(zhǔn)方案的精度。實驗結(jié)果表明,對準(zhǔn)最大誤差低于10nm,誤差標(biāo)準(zhǔn)差低于5nm,重復(fù)對準(zhǔn)精度小于30nm(3σ)。
[Abstract]:The rapid development of microelectronic technology and nanotechnology has continuously promoted the progress of micro-nano processing technology led by photolithography, which has become an important symbol to measure the core competitiveness of national science and technology. As one of the key unit techniques of lithography, alignment technology will directly affect the results of lithography. At present, the feature size of the most advanced lithography machine has reached 10 nm. Considering that the alignment accuracy needs to reach at least one tenth of the resolution of lithography, the ultra-high precision lithography alignment method has been paid more and more attention. Nano-lithography alignment based on moire fringes is considered to be a potential alignment technique with high alignment accuracy, good reliability and robustness. At present, many research results and articles on the technology have been reported, but these efforts have focused on how to improve the sensitivity and accuracy of the measurement, and few reports have been made on environmental factors, especially on the spatial attitude of the marking. The effect of illumination beam quality and image processing algorithm on the alignment accuracy of lithography. In fact, the phase distribution of moire fringes is closely related to these factors. Therefore, this paper will focus on how these environmental factors affect the phase distribution of moire fringes and further affect the alignment accuracy. The main contents of this paper are summarized as follows: 1. The current typical lithography alignment techniques are reviewed and their advantages and disadvantages are analyzed. The aim of this paper is to exploit its advantages and to introduce optical interferometry, and a new alignment method based on moire fringes is proposed. Through theoretical analysis and formula derivation, it is pointed out that the effect of Moir 茅 fringe on the amplification of small displacement, and the corresponding relationship between the phase information and the alignment deviation. Based on this, we will design a set of coarse fine lithography alignment mark, and give the corresponding image processing algorithm and phase extraction algorithm. 2. Aiming at the requirement of high precision and real time of precision alignment scheme, a windowed Fourier transform method based on spectrum is proposed in this paper, and its performance in extracting Moir 茅 fringe phase information is analyzed by using Window DesignAnalysis Tool platform of Maltlab. It mainly includes the ability to suppress spectrum leakage and the performance comparison of different window functions. 3. The influence of in-plane tilt on the distribution of moire fringes is analyzed, and the corresponding mathematical model is established, and the proposed theoretical model is verified by numerical simulation. On this basis, the correction method for the error source is given, and the application range and performance are compared by simulation. The results show that the error correction method for in-plane tilt can achieve the correction accuracy of 10-6rad order of magnitude. 4. 4. The influence of beam collimation on the distribution of moire fringes is analyzed, the corresponding mathematical model is established, and the proposed theoretical model is verified by numerical simulation. Finally, a correction method for the error source is given. Aiming at the requirement of real-time measurement of beam collimation in correction algorithm, a new method based on differential grating and Tyber effect is proposed. The results show that the accuracy of the method can reach the 10-8rad level of 5. 5. On the basis of theoretical research, a mask-silicon wafer alignment experiment system is built. Based on the experimental platform, stepwise experiments and repetitive experiments are used to verify the accuracy of the proposed alignment scheme. The experimental results show that the maximum error is less than 10 nm, the error standard deviation is less than 5 nm, and the precision of repeated alignment is less than 30nm (3 蟽).
【學(xué)位授予單位】：中國科學(xué)院研究生院(光電技術(shù)研究所)
【學(xué)位級別】：博士
【學(xué)位授予年份】：2016
【分類號】：TB383.1;TN305.7

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