【摘要】：本文基于壓阻效應(yīng)和電磁感應(yīng)構(gòu)建電磁激勵(lì)諧振傳感器,該傳感器包括激振結(jié)構(gòu)和拾振結(jié)構(gòu),通過(guò)對(duì)電磁激勵(lì)諧振傳感器進(jìn)行理論分析,該結(jié)構(gòu)中激勵(lì)線圈產(chǎn)生的磁場(chǎng)與外加磁場(chǎng)間存在相互作用磁力,拾振結(jié)構(gòu)輸出電壓信號(hào)發(fā)生改變,理論分析表明該結(jié)構(gòu)可完成電磁激勵(lì)諧振傳感器功能。在此基礎(chǔ)上,利用Ansys軟件分別對(duì)激振結(jié)構(gòu)和拾振結(jié)構(gòu)進(jìn)行仿真模型構(gòu)建和仿真分析,優(yōu)化電磁激勵(lì)諧振傳感器的設(shè)計(jì),通過(guò)采用Matlab軟件對(duì)硅膜應(yīng)力分布進(jìn)行計(jì)算分析,優(yōu)化拾振結(jié)構(gòu)中硅膜上納米硅薄膜晶體管設(shè)計(jì)位置。根據(jù)理論和仿真分析,電磁激勵(lì)諧振傳感器芯片尺寸為5000μm×5000μm,硅膜厚度為45μm,硅膜尺寸為3000μm×3000μm,激振結(jié)構(gòu)中電感線圈35匝鋁線圈,線圈寬度為7μm,間距為11μm,厚度為1μm;拾振結(jié)構(gòu)中納米硅薄膜晶體管溝道長(zhǎng)度和寬度分別為320μm和80μm。本文通過(guò)采用MEMS技術(shù)和CMOS工藝在n型100晶向高阻單晶硅片制作電磁激勵(lì)諧振傳感器,在硅片的上表面方形硅膜的中部采用掩埋濃硼內(nèi)引線方法制作激振結(jié)構(gòu),即能產(chǎn)生交變磁場(chǎng)的金屬電感線圈;采用CMOS技術(shù)在方形硅膜上制作四個(gè)納米硅薄膜晶體管溝道電阻作為壓敏電阻,構(gòu)成惠斯通電橋作為拾振結(jié)構(gòu)。實(shí)驗(yàn)結(jié)果給出,電磁激勵(lì)諧振傳感器的激振結(jié)構(gòu)能夠感應(yīng)外界磁場(chǎng)變化并產(chǎn)生感生電壓,當(dāng)對(duì)激振結(jié)構(gòu)施加交變激勵(lì)電壓時(shí),激振結(jié)構(gòu)能夠產(chǎn)生交變磁場(chǎng),當(dāng)激振結(jié)構(gòu)通以恒定電壓,在交變磁場(chǎng)作用下,可使硅膜產(chǎn)生振動(dòng),振動(dòng)頻率與交變磁場(chǎng)頻率一致,方形和圓形電感線圈在工作頻率為200k Hz時(shí)電感值分別為27.43n H和31.07n H。電磁激勵(lì)諧振傳感器的拾振結(jié)構(gòu)在硅膜振動(dòng)時(shí),能夠?qū)枘ふ駝?dòng)做出響應(yīng),拾振結(jié)構(gòu)在工作電壓為5.0V時(shí),響應(yīng)靈敏度為0.146m V/k Pa。實(shí)驗(yàn)結(jié)果表明,本文設(shè)計(jì)的電磁激勵(lì)諧振傳感器能夠?qū)崿F(xiàn)電磁激勵(lì)使硅膜產(chǎn)生振動(dòng),通過(guò)拾振結(jié)構(gòu)可以完成對(duì)硅膜振動(dòng)的檢測(cè)。
[Abstract]:In this paper, based on piezoresistive effect and electromagnetic induction, the electromagnetic excitation resonant sensor is constructed. The sensor includes the exciting structure and the picking up structure. Through the theoretical analysis of the electromagnetic excitation resonance sensor, There is interaction between the magnetic field generated by the exciting coil and the external magnetic field in the structure, and the output voltage signal of the picking up structure changes. The theoretical analysis shows that the structure can accomplish the function of electromagnetic excitation resonance sensor. On this basis, the simulation model and simulation analysis of the excited structure and the pick up structure are carried out by using Ansys software, and the design of electromagnetic excitation resonance sensor is optimized. The stress distribution of silicon film is calculated and analyzed by using Matlab software. The design position of nanocrystalline silicon thin film transistor on silicon film is optimized. According to the theory and simulation analysis, the size of electromagnetic exciting resonant sensor chip is 5000 渭 m 脳 5000 渭 m, the thickness of silicon film is 45 渭 m, the size of silicon film is 3000 渭 m 脳 3000 渭 m, the inductance coil is 35 turns aluminum coil, the width of coil is 7 渭 m, the spacing is 11 渭 m, and the thickness is 1 渭 m. The channel length and width of nanocrystalline silicon thin film transistor are 320 渭 m and 80 渭 m respectively. In this paper, the electromagnetic excitation resonant sensor is fabricated by using MEMS technology and CMOS process on n-type 100 crystal high resistance single crystal silicon wafer. In the middle of the square silicon film on the top surface of the silicon wafer, the excited structure is fabricated by buried concentrated boron inner lead method. The metal inductance coil which can produce alternating magnetic field; The channel resistance of four nanocrystalline silicon thin film transistors was fabricated on the square silicon film by CMOS technology as the varistor and the Wheatstone bridge was constructed as the pick up structure. The experimental results show that the exciting structure of electromagnetic excitation resonant sensor can induce the change of external magnetic field and generate induced voltage. When the exciting structure is subjected to alternating excitation voltage, the excited structure can produce alternating magnetic field. When the excited structure passes the constant voltage, the silicon film can vibrate under the action of the alternating magnetic field, and the vibration frequency is the same as the frequency of the alternating magnetic field. The inductance values of square and circular inductance coils are 27.43nH and 31.07nH, respectively, when the operating frequency is 200k Hz. The structure of electromagnetic excitation resonance sensor can respond to the vibration of silicon film when the film is vibrating. The sensitivity of the structure is 0.146 MV / k Pa. when the working voltage is 5.0 V. The experimental results show that the electromagnetic excitation resonant sensor designed in this paper can realize the vibration of silicon film induced by electromagnetic excitation and detect the vibration of silicon film by picking up vibration structure.
【學(xué)位授予單位】：黑龍江大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2016
【分類號(hào)】：TP212
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本文編號(hào)：2381117