本文選題：GaN + HEMT�。� 參考：《電子科技大學(xué)》2016年博士論文

【摘要】：隨著無(wú)線通信、雷達(dá)和電子戰(zhàn)等領(lǐng)域的快速發(fā)展,人們對(duì)微波收發(fā)機(jī)的性能提出了更高的要求。功率放大器作為發(fā)射機(jī)的關(guān)鍵組件,其中最主要、最關(guān)鍵的是功率晶體管,其帶寬、輸出功率、效率和工作溫度等性能將嚴(yán)重影響系統(tǒng)的整體性能。與以硅(Si)為代表的第一代半導(dǎo)體材料和以砷化鎵(GaAs)為代表的第二代半導(dǎo)體材料相比,第三代半導(dǎo)體材料氮化鎵(GaN)具有禁帶寬度大、飽和電子速度高、臨界擊穿電場(chǎng)高和熱導(dǎo)率高等優(yōu)勢(shì),所以它已成為半導(dǎo)體器件的一個(gè)重要的研究課題。GaN高電子遷移率晶體管(HEMT)的模型的準(zhǔn)確性對(duì)電路設(shè)計(jì)的影響非常大。目前,針對(duì)GaN HEMT的物理模型和大、小信號(hào)等效電路模型都已取得一定進(jìn)展,然而由于生產(chǎn)過(guò)程中的工藝誤差、模型的不確定性、工藝參數(shù)的變化以及環(huán)境因素的影響,器件及電路的一致性和工藝分析與優(yōu)化設(shè)計(jì)顯得格外重要,因此開(kāi)展GaN微波器件統(tǒng)計(jì)模型研究具有重要意義。本文針對(duì)GaN HEMT等效電路模型展開(kāi)研究,建立了大、小信號(hào)等效電路統(tǒng)計(jì)模型;并以等效電路統(tǒng)計(jì)模型為基礎(chǔ),設(shè)計(jì)了GaN HEMT高效率功率放大器對(duì)所建立的統(tǒng)計(jì)模型進(jìn)行驗(yàn)證分析。主要研究?jī)?nèi)容包括:1.基于蒙特卡洛方法的一種GaN HEMT小信號(hào)等效電路統(tǒng)計(jì)模型研究針對(duì)由制備過(guò)程中的工藝誤差所導(dǎo)致的等效電路模型的不準(zhǔn)確性,通過(guò)測(cè)試來(lái)自10個(gè)批次的56只國(guó)產(chǎn)GaN HEMT器件的多偏置電壓下的S參數(shù),采用GaN HEMT小信號(hào)等效電路經(jīng)驗(yàn)方程來(lái)進(jìn)行參數(shù)提取,提出了GaN HEMT多偏置小信號(hào)等效電路參數(shù)統(tǒng)計(jì)模型。建模方法包括主成分分析法、因子分析法、多元回歸模型以及蒙特卡洛方法。應(yīng)用于GaN HEMT器件的等效電路參數(shù),通過(guò)對(duì)比原始及所建立模型的均值、標(biāo)準(zhǔn)差、相關(guān)矩陣和S參數(shù),并通過(guò)分析多偏置電壓下的S參數(shù),驗(yàn)證了所建立的小信號(hào)等效電路統(tǒng)計(jì)模型的準(zhǔn)確性。2.基于蒙特卡洛方法的一種GaN HEMT大信號(hào)等效電路統(tǒng)計(jì)模型研究針對(duì)GaN HEMT大信號(hào)指標(biāo)(輸出功率Pout、功率附加效率PAE等)的波動(dòng)性,測(cè)試得到10個(gè)批次的34只GaN HEMT器件的直流I-V以及大信號(hào)測(cè)試結(jié)果,對(duì)非線性漏源電流Ids以及非線性柵電容Cgs、Cgd模型中的參數(shù)進(jìn)行提取�；谛⌒盘�(hào)等效電路統(tǒng)計(jì)模型的建模方法,提出了全參數(shù)大信號(hào)等效電路統(tǒng)計(jì)模型,克服了單一模型不能反映實(shí)際電路中的波動(dòng)范圍這一缺點(diǎn)。將得到的大信號(hào)統(tǒng)計(jì)模型嵌入ADS中進(jìn)行仿真,通過(guò)對(duì)比仿真與實(shí)測(cè)的漏源電流、輸出功率和功率附加效率等結(jié)果,并通過(guò)分析仿真與實(shí)測(cè)的輸出功率和功率附加效率的統(tǒng)計(jì)特性,驗(yàn)證了此大信號(hào)統(tǒng)計(jì)模型的準(zhǔn)確性。3.基于響應(yīng)曲面法的一種GaN HEMT大信號(hào)等效電路統(tǒng)計(jì)模型研究針對(duì)統(tǒng)計(jì)模型中由于數(shù)據(jù)量大而導(dǎo)致電路仿真中的不收斂等問(wèn)題,基于響應(yīng)曲面法,并對(duì)響應(yīng)曲面法進(jìn)行優(yōu)化改進(jìn),提出了一種簡(jiǎn)便的大信號(hào)統(tǒng)計(jì)模型。該方法所建立的統(tǒng)計(jì)模型數(shù)據(jù)量較小,具有準(zhǔn)確、快速及簡(jiǎn)便等優(yōu)點(diǎn),并且該統(tǒng)計(jì)模型在電路仿真中具有很好的收斂性。通過(guò)對(duì)比仿真與實(shí)測(cè)的輸出功率和功率附加效率等結(jié)果,并通過(guò)分析仿真與實(shí)測(cè)的輸出功率和功率附加效率的統(tǒng)計(jì)特性,驗(yàn)證了通過(guò)響應(yīng)曲面法所建立的大信號(hào)統(tǒng)計(jì)模型的準(zhǔn)確性。4.以統(tǒng)計(jì)模型為基礎(chǔ)的GaN HEMT高效率功率放大器設(shè)計(jì)與分析為了驗(yàn)證本文所建立的基于蒙特卡洛方法和響應(yīng)曲面法的統(tǒng)計(jì)模型的準(zhǔn)確性,分別以它們?yōu)榛A(chǔ),設(shè)計(jì)了一組Ku波段工作頻帶為13.7GHz~14.2GHz的E類功率放大器和一組S波段工作頻帶為2.7GHz~3.5GHz的逆F類功率放大器模塊,并對(duì)每組功放加工裝配三個(gè)。通過(guò)仿真與實(shí)測(cè)結(jié)果對(duì)比顯示,實(shí)測(cè)結(jié)果都落在仿真結(jié)果的范圍內(nèi),并與仿真結(jié)果的均值非常接近,驗(yàn)證了本文所建立的統(tǒng)計(jì)模型的準(zhǔn)確性,適合用于電路設(shè)計(jì)和成品率分析。最后將統(tǒng)計(jì)模型應(yīng)用于一款C波段工作頻帶為5GHz~6GHz的GaN HEMT功放單片電路(MMIC)中進(jìn)行仿真,通過(guò)與實(shí)測(cè)結(jié)果進(jìn)行對(duì)比分析,進(jìn)一步驗(yàn)證了此統(tǒng)計(jì)模型的準(zhǔn)確性,同時(shí)也說(shuō)明此統(tǒng)計(jì)模型適用于MMIC功放電路設(shè)計(jì)以及成品率分析。
[Abstract]:With the rapid development of wireless communication, radar and electronic warfare, the performance of microwave transceivers is higher. As the key component of the transmitter, power amplifier is the most important, the most critical is the power transistor. Its bandwidth, output power, efficiency and working temperature will seriously affect the integrity of the system. Compared with the first generation semiconductor materials represented by silicon (Si) and the second generation of semiconductor materials represented by gallium arsenide (GaAs), the third generation semiconductor material (GaN) has the advantages of large band gap, high saturation electron velocity, high critical breakdown electric field and high thermal conductivity, so it has become an important research in semiconductor devices. The accuracy of the model of.GaN high electron mobility transistor (HEMT) has a great impact on the design of the circuit. At present, some progress has been made in the physical model of GaN HEMT and the large, small signal equivalent circuit model. However, the process error, the model uncertainty, the change of the process parameters and the environmental causes in the production process. The consistency of devices and circuits and the process analysis and optimization design are particularly important. Therefore, it is of great significance to carry out the research on the statistical model of GaN microwave devices. In this paper, a large, small signal equivalent circuit statistical model is established for the GaN HEMT equivalent circuit model, and based on the equivalent circuit statistical model, the design of the equivalent circuit model is designed. The GaN HEMT high efficiency power amplifier is used to verify the statistical model established. The main contents are as follows: 1. a statistical model of GaN HEMT small signal equivalent circuit based on Monte Carlo method is used to study the inaccuracy of the equivalent circuit model caused by the process error in the preparation process, and from the test from 10 batches The S parameters of 56 domestic GaN HEMT devices under multiple bias voltages are obtained by using the empirical equation of the GaN HEMT small signal equivalent circuit to extract the parameters. The statistical model of the equivalent circuit parameters of the GaN HEMT multi biased small signal is proposed. The modeling methods include the principal component analysis, factor analysis, multiple regression model and Monte Carlo method. For the equivalent circuit parameters of GaN HEMT devices, by comparing the mean, standard deviation, correlation matrix and S parameters of the original and established models, and by analyzing the S parameters under the multi bias voltage, the accuracy of the established statistical model of the small signal equivalent circuit is verified by.2., a GaN HEMT large signal equivalent circuit based on the Mont Carlo method. Considering the volatility of GaN HEMT large signal index (output power Pout, power added efficiency PAE and so on), the DC I-V and large signal test results of 34 GaN HEMT devices of 10 batches are tested. The parameters in the nonlinear drain current Ids and the nonlinear gate capacitor Cgs, Cgd model are extracted. The statistical model of the full parameter large signal equivalent circuit is put forward, which overcomes the shortcoming that the single model can not reflect the fluctuation range in the actual circuit. The large signal statistical model is embed in the ADS to simulate the leakage current, the output power and the power added efficiency by comparing the simulated and measured leakage source current. According to the analysis of the statistical characteristics of the output power and power added efficiency of the simulated and measured data, the accuracy of the large signal statistical model is verified by the.3. based GaN HEMT large signal equivalent circuit statistical model based on the response surface method, which is based on the problem of the non convergence in the circuit simulation due to the large amount of data in the statistical model. On the basis of response surface method and the optimization of response surface method, a simple large signal statistical model is proposed. The statistical model of this method has the advantages of small amount of data, accurate, fast and simple, and the statistical model has good convergence in the circuit simulation. The output power of the simulation and the measured is compared. And power added efficiency and so on, and by analyzing the statistical characteristics of the output power and power added efficiency of the simulation and measurement, the design and analysis of the GaN HEMT high efficiency power amplifier based on the statistical model based on the statistical model is verified by the accuracy of the large signal statistical model established by the response surface method to verify the base set up in this paper. Based on the accuracy of the Monte Carlo method and the response surface method, a group of E class power amplifiers with Ku band working band of 13.7GHz~14.2GHz and a group of inverse F power amplifier modules with a group of S band working bands 2.7GHz~3.5GHz are designed, and three units of each group are fabricated. The test results show that the measured results all fall within the range of the simulation results and are very close to the mean of the simulation results. The accuracy of the statistical model established in this paper is verified, and it is suitable for the circuit design and the yield analysis. Finally, the statistical model is applied to a GaN HEMT amplifier monolithic circuit of the C band working band of 5GHz~6GHz. (MMIC) simulation is carried out, and the accuracy of the statistical model is verified by comparison and analysis with the measured results. At the same time, it also shows that the statistical model is suitable for the design of MMIC power amplifier circuit and the analysis of yield.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2016
【分類號(hào)】：TN386

【相似文獻(xiàn)】

相關(guān)期刊論文 前10條

1 夏新華,潘志庚;基于統(tǒng)計(jì)模型的海水運(yùn)動(dòng)仿真[J];計(jì)算機(jī)仿真;2005年01期

2 趙培東;謝劍英;;圖像小波域局部統(tǒng)計(jì)模型的擬合優(yōu)度檢驗(yàn)[J];應(yīng)用概率統(tǒng)計(jì);2008年06期

3 朱青;;Mathematica軟件在工業(yè)統(tǒng)計(jì)模型中的應(yīng)用研究[J];電子技術(shù);2012年06期

4 曾建軍;統(tǒng)計(jì)模型的計(jì)算機(jī)模擬教學(xué)系統(tǒng)[J];安徽大學(xué)學(xué)報(bào)(自然科學(xué)版);1997年02期

5 董軍;徐淼;潘云鶴;;基于統(tǒng)計(jì)模型的書(shū)法創(chuàng)作模擬[J];計(jì)算機(jī)學(xué)報(bào);2008年07期

6 駱楨軒;;組合統(tǒng)計(jì)模型在程序錯(cuò)誤定位中的應(yīng)用[J];計(jì)算機(jī)工程與設(shè)計(jì);2010年19期

7 朱忠林;丁輝;王廣志;;利用可變形統(tǒng)計(jì)模型進(jìn)行膝關(guān)節(jié)建模與運(yùn)動(dòng)測(cè)量[J];清華大學(xué)學(xué)報(bào)(自然科學(xué)版);2013年01期

8 彭嘉雄;張?zhí)煨?;隨機(jī)離散圖象的統(tǒng)計(jì)模型研究[J];自動(dòng)化學(xué)報(bào);1984年01期

9 許小劍,黃培康;一種新的雷達(dá)目標(biāo)散射截面統(tǒng)計(jì)模型[J];系統(tǒng)工程與電子技術(shù);1990年02期

10 季玲玲;陳浩;張曄;;基于統(tǒng)計(jì)模型預(yù)測(cè)截?cái)嗟拇a率控制算法[J];計(jì)算機(jī)工程;2008年18期

相關(guān)會(huì)議論文 前10條

1 陽(yáng)德青;肖仰華;汪衛(wèi);;基于統(tǒng)計(jì)模型的社會(huì)網(wǎng)絡(luò)群體關(guān)注度的分析與預(yù)測(cè)[A];NDBC2010第27屆中國(guó)數(shù)據(jù)庫(kù)學(xué)術(shù)會(huì)議論文集(B輯)[C];2010年

2 蔣丹寧;秦勇;劉文;劉義;;基于統(tǒng)計(jì)模型的哼唱旋律識(shí)別算法[A];第九屆全國(guó)人機(jī)語(yǔ)音通訊學(xué)術(shù)會(huì)議論文集[C];2007年

3 陳永勝;劉小明;任福田;張黔芳;;道路安全設(shè)計(jì)支持平臺(tái)之統(tǒng)計(jì)模型的研究[A];第七次城市道路與交通工程學(xué)術(shù)會(huì)議論文集[C];2002年

4 嚴(yán)力蛟;全為民;趙曉慧;;千島湖浮游植物統(tǒng)計(jì)模型及其預(yù)測(cè)[A];浙江省第二屆生物多樣性保護(hù)與可持續(xù)發(fā)展研討會(huì)論文摘要集[C];2004年

5 劉晶晶;衛(wèi)水愛(ài);孫俊君;胡海云;邢修三;;生物材料的非平衡統(tǒng)計(jì)模型[A];中國(guó)力學(xué)學(xué)會(huì)學(xué)術(shù)大會(huì)'2005論文摘要集（上）[C];2005年

6 高山;張艷;徐波;宗成慶;韓兆兵;;基于三元統(tǒng)計(jì)模型的漢語(yǔ)分詞及標(biāo)注一體化研究[A];自然語(yǔ)言理解與機(jī)器翻譯——全國(guó)第六屆計(jì)算語(yǔ)言學(xué)聯(lián)合學(xué)術(shù)會(huì)議論文集[C];2001年

7 彭T3忠謀;;訓(xùn)練用漢語(yǔ)語(yǔ)音資料之音素標(biāo)示[A];第四屆全國(guó)人機(jī)語(yǔ)音通訊學(xué)術(shù)會(huì)議論文集[C];1996年

8 信飛;孫國(guó)武;陳伯民;;自回歸統(tǒng)計(jì)模型在延伸期預(yù)報(bào)中的應(yīng)用[A];第六屆長(zhǎng)三角氣象科技論壇論文集[C];2009年

9 胡振濤;劉先省;;機(jī)動(dòng)目標(biāo)跟蹤的一種改進(jìn)多傳感器數(shù)據(jù)融合算法[A];第二十四屆中國(guó)控制會(huì)議論文集（下冊(cè)）[C];2005年

10 張本愛(ài);莫俊永;張玉蘭;劉海燕;;任意自旋粒子的一種改進(jìn)光學(xué)統(tǒng)計(jì)模型[A];第八屆全國(guó)核物理會(huì)議文摘集（上冊(cè)）[C];1991年

相關(guān)重要報(bào)紙文章 前5條

1 葛新權(quán) 北京信息科技大學(xué)經(jīng)濟(jì)管理學(xué)院;經(jīng)濟(jì)統(tǒng)計(jì)模型的建模原則與創(chuàng)新[N];中國(guó)社會(huì)科學(xué)報(bào);2010年

2 李傳金;設(shè)計(jì)新的統(tǒng)計(jì)模型[N];經(jīng)濟(jì)視點(diǎn)報(bào);2006年

3 沈，

本文編號(hào)：2039636