本文選題：標(biāo)準(zhǔn)SiGe + BiCMOS�。� 參考：《天津大學(xué)》2016年博士論文

【摘要】：光通信技術(shù)正迅速將其應(yīng)用領(lǐng)域擴(kuò)展到互連系統(tǒng)中,而基于銅線的電互連逐漸被光纖所取代。硅基光電子技術(shù)從低價(jià)格和高集成度出發(fā),引領(lǐng)著下一代光通信的發(fā)展趨勢(shì)。光接收機(jī)作為光互連系統(tǒng)的核心模塊之一,自然成為硅基光電子的研究熱點(diǎn)方向。標(biāo)準(zhǔn)SiGe BiCMOS工藝除了具有低噪聲和較好的頻率特性之外,同時(shí)還具有較好的光電特性,因此成為硅基寬帶光接收機(jī)設(shè)計(jì)的最理想工藝。很多國(guó)內(nèi)外學(xué)者已經(jīng)開始對(duì)基于標(biāo)準(zhǔn)SiGe BiCMOS工藝的光接收機(jī)進(jìn)行了一些的研究,但其結(jié)果離商用化標(biāo)準(zhǔn)仍有一定差距。本文基于標(biāo)準(zhǔn)SiGe BiCMOS工藝對(duì)寬帶光接收機(jī)系統(tǒng)進(jìn)行了研究,主要進(jìn)行了如下工作:1、基于IBM 7WL標(biāo)準(zhǔn)0.18μm SiGe BiCMOS工藝對(duì)DPD、PIN和HPT光電探測(cè)器進(jìn)行了建模,分析了影響光電探測(cè)器響應(yīng)度和帶寬的因素,并流片實(shí)現(xiàn)。在850 nm波長(zhǎng)的輸入光照條件下,三種探測(cè)器的響應(yīng)度分別能達(dá)到0.007 A/W,0.01 A/W和0.4 A/W。其中,HPT光電晶體管的性能已接近商用化標(biāo)準(zhǔn)。同時(shí),提出了一種基于PIN結(jié)構(gòu)的全差分光電探測(cè)器,可將單根光纖輸出的光信號(hào)轉(zhuǎn)換成一對(duì)全差分電流信號(hào)。2、利用標(biāo)準(zhǔn)0.18μm CMOS器件設(shè)計(jì)了一款集成cascode反饋型RGC輸入級(jí)、π型匹配網(wǎng)路及一種新型米勒電容補(bǔ)償技術(shù)的寬帶跨阻放大器,測(cè)試結(jié)果為跨阻增益57 dBΩ,帶寬8.2 GHz及靜態(tài)功耗22 mW;利用SiGe HBT器件(截止頻率60 GHz)設(shè)計(jì)了一款集成新型電容簡(jiǎn)并RGC輸入級(jí)、π型匹配網(wǎng)路的寬帶跨阻放大器,測(cè)試結(jié)果為跨阻增益61 dBΩ、帶寬15 GHz及靜態(tài)功耗32 mW。3、利用標(biāo)準(zhǔn)0.18μm CMOS器件設(shè)計(jì)了一款反比例縮放限幅放大器,增益30 dB、帶寬5.9 GHz,同時(shí)設(shè)計(jì)一款交錯(cuò)式三階有源反饋限幅放大器,增益44.4dB、帶寬9.3 GHz;利用SiGe HBT器件設(shè)計(jì)了一款集成電容簡(jiǎn)并結(jié)構(gòu)及Cherry Hooper結(jié)構(gòu)的限幅放大器,增益46.4 dB,帶寬20.5 GHz;利用CMOS器件設(shè)計(jì)了一款fT倍頻緩沖級(jí),增益3.7 dB,帶寬17 GHz。4,利用標(biāo)準(zhǔn)0.18μm CMOS工藝設(shè)計(jì)了一款全差分光接收機(jī),跨阻增益92.5dBΩ,帶寬8.9 GHz,數(shù)據(jù)傳輸速率達(dá)到10 Gb/s;利用標(biāo)準(zhǔn)0.18μm SiGe BiCMOS工藝設(shè)計(jì)了一款的全差分光接收機(jī),跨阻增益107 dBΩ,17 GHz,數(shù)據(jù)傳輸速率達(dá)到20 Gb/s。
[Abstract]:Optical communication technology is rapidly expanding its application to interconnection systems, and electrical interconnection based on copper wire is gradually replaced by optical fiber. Silicon-based optoelectronics technology leads the development trend of next generation optical communication from low price and high integration level. As one of the core modules of optical interconnection system, optical receiver has naturally become a hot research direction of silicon based optoelectronics. The standard SiGe BiCMOS process not only has low noise and better frequency characteristics, but also has good photoelectric characteristics, so it has become the most ideal process for the design of silicon-based wideband optical receiver. Many scholars at home and abroad have done some research on the optical receiver based on standard SiGe BiCMOS process, but the results are still far from the commercial standard. In this paper, the broadband optical receiver system is studied based on the standard SiGe BiCMOS process. The main work is as follows: 1. Based on the IBM 7WL standard 0.18 渭 m SiGe BiCMOS process, the DPD-PIN and HPT photodetectors are modeled. The factors affecting the responsivity and bandwidth of the photodetector are analyzed. Under the input illumination at 850nm, the responsivity of the three detectors can reach 0.007 A / W 0.01 A / W and 0.4 A / W respectively. The performance of HPT phototransistor is close to the commercial standard. At the same time, a fully differential photodetector based on PIN structure is proposed. The optical signal output from a single fiber can be converted into a pair of fully differential current signals. A wideband transresistance amplifier integrating cascode feedback RGC input stage, 蟺 matching network and a novel Hans Muller capacitor compensation technique is designed by using a standard 0.18 渭 m CMOS device. The test results show that the transresistance gain is 57 dB 惟, the bandwidth is 8.2 GHz and the static power consumption is 22 MW. A novel capacitive degenerate RGC input stage, 蟺 type matched network wideband transresistance amplifier is designed by using the SiGe HBT device (cutoff frequency 60 GHz). The test results show that the gain is 61 dB 惟, the bandwidth is 15 GHz and the static power consumption is 32 MW. An inverse scaling limiting amplifier with 30 dB gain and 5.9 GHz bandwidth is designed by using the standard 0.18 渭 m CMOS device. An interleaved third order active feedback limiting amplifier is also designed. The gain is 44.4 dB, the bandwidth is 9.3 GHz, a limiting amplifier with an integrated capacitance degenerate structure and Cherry Hooper structure is designed by using SiGe HBT device, the gain is 46.4 dB, the bandwidth is 20.5 GHz, and a FT double frequency buffer level is designed by using the CMOS device. Gain 3.7 dB, bandwidth 17 GHz 路4, using standard 0.18 渭 m CMOS process to design a fully differential optical receiver, with transresistive gain 92.5dB 惟, bandwidth 8.9 GHz, data transmission rate up to 10 GB / s. A fully differential optical receiver is designed using standard 0.18 渭 m SiGe BiCMOS process. The transresistance gain is 107 dB 惟 ~ (17) GHz and the data transmission rate is 20 GB / s.
【學(xué)位授予單位】：天津大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2016
【分類號(hào)】：TN929.1;TN851

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本文編號(hào)：1930060