發(fā)布時(shí)間：2018-05-13 00:17

  本文選題：電解質(zhì) + 雙電層　； 參考：《中國科學(xué)院寧波材料技術(shù)與工程研究所》2016年博士論文

【摘要】：近年來,由于電解質(zhì)材料具有巨大的雙電層電容效應(yīng),研究人員將電解質(zhì)用作晶體管的柵介質(zhì)材料實(shí)現(xiàn)了低壓工作的晶體管器件。然而此類晶體管器件大部分是基于液體電解質(zhì)柵介質(zhì)和有機(jī)半導(dǎo)體溝道,因此在器件集成和穩(wěn)定性方面存在一定的缺陷。將固態(tài)電解質(zhì)用作氧化物薄膜晶體管的柵介質(zhì)材料,降低器件工作電壓的同時(shí)具有良好的結(jié)構(gòu)擴(kuò)展性和器件穩(wěn)定性,還有助于設(shè)計(jì)新穎的器件結(jié)構(gòu)。此外,電解質(zhì)中獨(dú)特的離子極化響應(yīng)行為和器件界面處極強(qiáng)的離子/電子耦合現(xiàn)象,符合神經(jīng)仿生和生化傳感領(lǐng)域的需求。本論文研究了以海藻酸鈉質(zhì)子導(dǎo)體膜、自支撐殼聚糖質(zhì)子導(dǎo)體膜和SiO_2質(zhì)子導(dǎo)體膜等固態(tài)電解質(zhì)為柵介質(zhì)的氧化物雙電層晶體管,并研究雙電層晶體管在人造突觸和生化傳感等領(lǐng)域的應(yīng)用。本論文的主要工作可以概括為以下幾個(gè)方面:(1)通過簡(jiǎn)單的涂布法制備了海藻酸鈉薄膜,發(fā)現(xiàn)薄膜具有較大的雙電層電容(~4.6μF/cm~2)和高的質(zhì)子電導(dǎo)率(~7.7×10-4 S/cm)。在一定范圍內(nèi)溫度越高相對(duì)濕度越大,海藻酸鈉質(zhì)子導(dǎo)體膜的雙電層電容越大。由于海藻酸鈉質(zhì)子導(dǎo)體膜具有三維質(zhì)子傳導(dǎo)特性,質(zhì)子可在側(cè)向電場(chǎng)下遠(yuǎn)距離遷移,形成側(cè)向的質(zhì)子/電子耦合。我們首次采用海藻酸鈉質(zhì)子導(dǎo)體膜作為柵介質(zhì)成功研制了低壓側(cè)向耦合氧化物雙電層晶體管,器件的電流開關(guān)比~3.1×106、工作電壓1.5 V、閾值電壓為-0.1 V、飽和區(qū)場(chǎng)效應(yīng)遷移率為9.5 cm~2/V·s、亞閾值擺幅為100 m V/dec。并研制了基于海藻酸鈉調(diào)控側(cè)向耦合氧化物雙電層晶體管的電阻負(fù)載型反相器,當(dāng)反相器的電源電壓為1.0 V時(shí),電壓增益高達(dá)5。基于海藻酸鈉調(diào)控側(cè)向耦合氧化物雙電層晶體管的雙側(cè)柵工作模式,實(shí)現(xiàn)與門邏輯功能。最后,在柔性紙張襯底上制備海藻酸鈉質(zhì)子導(dǎo)體紙張氧化物雙電層晶體管,該器件在較低的工作電壓下表現(xiàn)出良好的晶體管性能,并基于雙側(cè)柵模式實(shí)現(xiàn)了與門邏輯功能。(2)采用簡(jiǎn)單的涂布-剝離工藝制備了自支撐殼聚糖薄膜,發(fā)現(xiàn)薄膜具有較大的側(cè)向雙電層電容(~0.7μF/cm~2),實(shí)驗(yàn)結(jié)果表明自支撐殼聚糖薄膜是電子絕緣但質(zhì)子傳導(dǎo)的固態(tài)電解質(zhì)薄膜。我們首次采用自支撐殼聚糖質(zhì)子導(dǎo)體膜作為晶體管的柵介質(zhì)層,成功研制了自支撐柔性氧化物雙電層晶體管。器件的電流開關(guān)比106、工作電壓1.6 V、閾值電壓為-0.2 V、遷移率為14.2 cm~2/V·s、亞閾值擺幅為120 m V/dec,同時(shí)具有良好的穩(wěn)定性和抗彎曲性能。雙電層晶體管作為一種離子/電子雜化晶體管,其電學(xué)特性受到離子遷移和離子/電子界面耦合的影響。生物體內(nèi)的液體環(huán)境充滿著各種離子,神經(jīng)系統(tǒng)內(nèi)的信息傳遞過程同樣存在類似的耦合現(xiàn)象。因此,我們將自支撐柔性氧化物雙電層晶體管作為人造突觸,詳細(xì)研究了該突觸器件的記憶/學(xué)習(xí)、短程/長(zhǎng)程塑性、高通濾波和多輸入時(shí)空信息整合等特性。正向柵壓脈沖刺激下,溝道電流呈現(xiàn)類似生物突觸的EPSC特性;雙脈沖刺激下,溝道電流呈現(xiàn)類似生物突觸的雙脈沖易化特性。人造突觸的短程塑性與雙電層靜電耦合調(diào)控有關(guān),而長(zhǎng)程塑性與溝道電化學(xué)摻雜有關(guān)。另外,基于突觸晶體管的雙柵和多柵工作模式,我們發(fā)現(xiàn)共平面的側(cè)柵之間可以相互調(diào)控、相互制約,并實(shí)現(xiàn)了兩個(gè)突觸輸入的雙脈沖易化和信息時(shí)空整合。通過改變調(diào)控柵極的輸入信號(hào)實(shí)現(xiàn)了“與”和“或”脈沖邏輯,以上工作為突觸電子學(xué)和神經(jīng)形態(tài)計(jì)算奠定了材料和器件基礎(chǔ)。(3)基于氧化物雙電層晶體管的多巴胺傳感器。采用PECVD法制備了具有高離子電導(dǎo)率的SiO_2質(zhì)子導(dǎo)體薄膜,發(fā)現(xiàn)薄膜具有較大的雙電層電容(~2.0μF/cm~2)。SiO_2質(zhì)子導(dǎo)體薄膜的疏松孔道中吸附的水分子對(duì)雙電層的形成起著關(guān)鍵的作用,質(zhì)子在薄膜內(nèi)部的傳導(dǎo)遵循格羅斯特機(jī)理。采用SiO_2質(zhì)子導(dǎo)體膜作為柵介質(zhì)層在導(dǎo)電玻璃襯底上研制了高性能低壓氧化物雙電層晶體管,待測(cè)溶液中的多巴胺分子與ITO柵極表面的苯硼酸特異性結(jié)合形成帶負(fù)電荷的多巴胺-硼酸酯絡(luò)合物,改變了柵極的表面電勢(shì)從而使晶體管的轉(zhuǎn)移曲線出現(xiàn)漂移。由此我們基于氧化物雙電層晶體管實(shí)現(xiàn)了多巴胺傳感,該多巴胺傳感器表現(xiàn)出較高的靈敏度和較好的選擇性。在低的工作電壓(0.8 V)下多巴胺的檢測(cè)極限低至0.1n M。
[Abstract]:In recent years, because of the huge double layer capacitance effect of electrolyte materials, the researchers have used electrolytes as the gate dielectric materials for transistors to achieve low voltage transistors. However, most of these transistors are based on liquid electrolyte grid media and organic semiconductors channel. There are some defects. The solid-state electrolyte is used as the gate dielectric material of the oxide thin film transistor, which reduces the working voltage of the device while having good structural expansibility and device stability. It also helps to design novel device structure. In addition, the unique ionic polarity response in the electrolyte and the very strong ion / ion at the interface of the device are also available. The electron coupling phenomenon is in line with the demand in the field of neural bionics and biochemical sensing. In this paper, the oxide double layer transistors, such as the sodium alginate proton conductor film, the self supporting chitosan proton conductor membrane and the SiO_2 proton conductor membrane, are studied in this paper. The main work of this paper can be summarized as follows: (1) the sodium alginate film is prepared by a simple coating method. It is found that the film has a larger double layer capacitance (~4.6 mu F/cm~2) and a high proton conductivity (~7.7 x 10-4 S/cm). The higher the temperature, the higher the relative humidity, the higher the relative humidity, the sodium alginate proton conductor The higher the double layer capacitance of the membrane, the proton conducting membrane of the sodium alginate proton conductors has three dimensional proton conduction characteristics, and the proton can migrate far away from the lateral electric field to form the lateral proton / electron coupling. We successfully developed the low pressure lateral coupled oxide double layer transistor with the sodium alginate proton conductor membrane for the first time. The current switch is ~3.1 x 106, the operating voltage is 1.5 V, the threshold voltage is -0.1 V, the saturation field effect mobility is 9.5 cm~2/V s, the sub threshold swing is 100 m V/dec., and the resistance load inverter based on the sodium alginate control side coupled oxide double layer transistor is developed. When the inverter's power supply voltage is 1 V, the voltage gain is high. Up to 5. is based on the dual gate operation mode of the side coupled oxide double layer transistor based on sodium alginate to realize the gate logic function. Finally, the sodium alginate proton conductor paper oxide double layer transistor is prepared on the flexible paper substrate, which shows good transistor performance under the lower working voltage and is based on both sides. The gate mode realizes the logic function with the gate. (2) the self supporting chitosan film is prepared by a simple coating and stripping process. It is found that the thin film has a large lateral double layer capacitance (~0.7 mu F/cm~2). The experimental results show that the self supported chitosan film is a solid electrolyte membrane with electronic insulation but proton conduction. We first use the self supporting shell. As the gate dielectric layer of the transistor, the self supported flexible oxide double layer transistor has been successfully developed. The current switching ratio of the self supporting flexible oxide double layer transistor is 106, the operating voltage is 1.6 V, the threshold voltage is -0.2 V, the mobility is 14.2 cm~2/V. S, the sub threshold swing is 120 m V/dec, and it has good stability and anti bending performance. Double layer crystal is good at the same time. As an ion / electronic hybrid transistor, the electrical properties of the transistors are affected by ion migration and the coupling of ion / electronic interfaces. The liquid environment in the organism is filled with various ions. The information transfer process in the nervous system is similar to that of the coupling phenomenon. Therefore, we will support the self supported flexible oxide double layer transistor as a self support. Artificial synapses have studied the memory / learning of the synaptic device, short range / long range plasticity, high pass filtering and multi input spatiotemporal information integration. Under the stimulation of the positive gate pressure pulse, the channel current is similar to the EPSC characteristic of the biological synapse; the channel current presents the dual pulse susceptibility to the biological synapse under the double pulse stimulation. The short range ductility of the contact is related to the electrostatic coupling of the electric double layer, while the long range plasticity is related to the channel electrochemical doping. In addition, based on the double gate and multi gate mode of the synaptic transistors, we find that the common plane grids can be controlled and restricted to each other, and two synaptic inputs are realized and the information space-time integration is realized. The "and" and "" pulse logic are realized by changing the input signal of the regulating gate. The above work lays the material and device basis for the synaptic electronics and the neural morphology calculation. (3) the dopamine sensor based on the oxide double layer transistor is used to prepare the SiO_2 proton conductor thin film with high ionic conductivity by PECVD. The present film has a large double layer capacitance (~2.0 mu F/cm~2).SiO_2 proton conductor film and the water molecules adsorbed in the porous channel play a key role in the formation of the double layer. The conduction of the proton in the film follows the grunst mechanism. The high performance of the SiO_2 proton conductor film is used as the gate dielectric layer on the conductive glass substrate. The low pressure oxide double layer transistor, the dopamine molecules in the solution to be specifically combined with the boric acid on the surface of the ITO gate to form a negatively charged dopamine borate complex, which changes the surface potential of the gate and thus leads to the shift of the transistor transfer curve. Thus, we have realized DOPA based on the oxide double layer transistor. Amine sensing showed that the dopamine sensor exhibited high sensitivity and selectivity. The detection limit of dopamine was as low as 0.1N M. at a low working voltage (0.8 V).

【學(xué)位授予單位】：中國科學(xué)院寧波材料技術(shù)與工程研究所
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2016
【分類號(hào)】：TN32

【相似文獻(xiàn)】

相關(guān)期刊論文 前7條

1 吳德明;;固體雙電層功能元件[J];電子技術(shù);1985年09期

2 程廣祿;;玻璃電極響應(yīng)機(jī)理的研究——雙電層雙電容理論[J];化學(xué)傳感器;1990年02期

3 劉仲娥,白亮,李棟,孫石光,羅天柱,桂娟;陰極界面的雙電層對(duì)液體鉭電容器電性能影響的研究[J];壓電與聲光;2001年06期

4 許維源;;脈沖電鍍及其應(yīng)用(續(xù))[J];電子工藝技術(shù);1985年09期

5 王家峻;林曉輝;楊決寬;陳云飛;;雙電層對(duì)納米流體潤滑與摩擦影響的MD模擬[J];傳感技術(shù)學(xué)報(bào);2006年05期

6 ;超低壓雙電層晶體管研究獲進(jìn)展[J];光機(jī)電信息;2010年12期

7 ;[J];;年期

相關(guān)會(huì)議論文 前8條

1 莫?jiǎng)π?;電容吸附去離子技術(shù)的理論探討——孔道雙電層模型理論[A];第一屆海水淡化與水再利用西湖論壇論文集[C];2006年

2 周明;王正武;徐祖民;;泛函數(shù)法研究平行平板雙電層間的相互作用[A];中國化學(xué)會(huì)第十一屆膠體與界面化學(xué)會(huì)議論文摘要集[C];2007年

3 鄭勇;呂會(huì)超;許滸;田大勇;牛永生;侯紹剛;;離子液體中電沉積過程的雙電層結(jié)構(gòu)特征[A];中國化學(xué)會(huì)第29屆學(xué)術(shù)年會(huì)摘要集——第01分會(huì)：表面物理化學(xué)[C];2014年

4 劉仲娥;白亮;李棟;賈延慶;孫石光;羅天柱;桂娟;;陰極界面的雙電層對(duì)液體鉭電容器電性能影響的研究[A];中國電子學(xué)會(huì)第七屆學(xué)術(shù)年會(huì)論文集[C];2001年

5 王正武;;泛函數(shù)法解無限長(zhǎng)柱狀膠束的雙電層方程[A];中國化學(xué)會(huì)第十屆膠體與界面化學(xué)會(huì)議論文摘要集[C];2004年

6 王正武;李干佐;;泛函數(shù)法研究球狀膠束的雙電層厚度[A];中國化學(xué)會(huì)第十屆膠體與界面化學(xué)會(huì)議論文摘要集[C];2004年

7 寇麗麗;熊繼軍;張文棟;;微型膠體推進(jìn)器噴頭副反應(yīng)分析與減弱方法[A];中國宇航學(xué)會(huì)深空探測(cè)技術(shù)專業(yè)委員會(huì)第五屆學(xué)術(shù)年會(huì)論文集[C];2008年

8 周明;王正武;徐祖民;;泛函數(shù)法研究食品乳狀液的穩(wěn)定性[A];中國食品科學(xué)技術(shù)學(xué)會(huì)第五屆年會(huì)暨第四屆東西方食品業(yè)高層論壇論文摘要集[C];2007年

相關(guān)重要報(bào)紙文章 前1條

1 天津工業(yè)大學(xué)紡織學(xué)部教授 焦曉寧;雙電層起電非織造抗靜電劑在國內(nèi)初露端倪[N];中國紡織報(bào);2013年

相關(guān)博士學(xué)位論文 前9條

1 劉洋;電吸附技術(shù)用于工業(yè)廢水脫鹽的特性研究[D];北京化工大學(xué);2014年

2 趙古田;固液界面雙電層結(jié)構(gòu)的理論與實(shí)驗(yàn)研究[D];東南大學(xué);2014年

3 譚啟檐;離子相關(guān)性與固液界面雙電層實(shí)驗(yàn)研究[D];東南大學(xué);2015年

4 郭麗祥;雙電層影響下的微通道分層流動(dòng)及其穩(wěn)定性研究[D];天津大學(xué);2010年

5 顧志明;超細(xì)重質(zhì)碳酸鈣的分散性研究與粒子雙電層相互作用的探討[D];南京理工大學(xué);2002年

6 左啟陽;非對(duì)稱雙電層對(duì)薄膜潤滑性能影響的研究[D];華南理工大學(xué);2012年

7 張樂道;壓力驅(qū)動(dòng)微尺度液—液分層流動(dòng)研究[D];天津大學(xué);2014年

8 楊娟;超級(jí)電容電池用炭類負(fù)極材料制備及性能研究[D];中南大學(xué);2010年

9 蔣杰;雙電層靜電調(diào)制及其低電壓氧化物薄膜晶體管研究[D];湖南大學(xué);2012年

相關(guān)碩士學(xué)位論文 前6條

1 周明;泛函數(shù)理論精確研究帶電膠體粒子雙電層間的相互作用[D];江南大學(xué);2008年

2 荊紅偉;電鍍CBN過程中雙電層效應(yīng)產(chǎn)生機(jī)理及消除方法的研究[D];太原理工大學(xué);2016年

3 劉傳;無機(jī)超分子雙電層納米材料的制備、表征及應(yīng)用研究[D];北京化工大學(xué);2016年

4 趙莎莎;雙電層水性無機(jī)富鋅涂料的制備研究[D];北京化工大學(xué);2016年

5 張朔;電解液溶劑對(duì)石墨烯雙電層儲(chǔ)能特性影響的分子動(dòng)力學(xué)模擬研究[D];浙江大學(xué);2017年

6 徐祖民;用泛函數(shù)法對(duì)電解質(zhì)溶液中膠體粒子雙電層性質(zhì)及相互作用的研究[D];江南大學(xué);2008年

，

本文編號(hào)：1880806