本文選題：AlGaN/GaN + AlInN/GaN�。� 參考：《南京大學(xué)》2016年博士論文

【摘要】：水是生命之源,地球上幾乎所有的動、植物都離不開它。但隨著人口的增長,這種有限的水資源在日益減少；工農(nóng)業(yè)技術(shù)的迅速發(fā)展,更是將各種有毒、有害的物質(zhì)排入地下、江河、湖泊、水庫,使地下水、地表水污染愈發(fā)加重,雖然自來水都會進行消毒處理,但消毒并不會除去重金屬離子,而且會帶來一些對人類健康有害的消毒副產(chǎn)物,如鹵代乙酸類、溴酸根、氯酸根等多種陰離子,它們已被證實具有遺傳毒性、致癌性或生殖發(fā)育等毒性。在此背景下,本文采用離子印跡聚合物結(jié)合GaN HEMT器件的優(yōu)點構(gòu)建電化學(xué)傳感器,實現(xiàn)對磷酸根、三氯乙酸根有害陰離子的檢測,本論文設(shè)計、制備的傳感器對待測離子選擇性強、靈敏度高、檢測限低、比較穩(wěn)定且可多次重復(fù)使用的特點。本文的主要研究內(nèi)容和研究成果如下：1.結(jié)合磷酸根離子印跡聚合物和AlGaN/GaN HEMT器件的特性,設(shè)計了一種新型的磷酸根離子電化學(xué)傳感器。AlGaN/GaN HEMT傳感器的電學(xué)特性用Keithley 2600A數(shù)字源表進行表征,實驗結(jié)果表明：該傳感器對磷酸根離子具有高度的識別選擇性,對高錳酸根、硫酸根等干擾離子不識別,這是因為離子印跡聚合物對模板離子具有專一的識別性。該傳感器的靈敏度為3.191μA/mg·L-1,檢測極限為1.97μg/L,對磷酸根離子表現(xiàn)出來高的選擇性、靈敏度和穩(wěn)定性,在飲用水中磷酸根離子的在線監(jiān)測領(lǐng)域具有較大的應(yīng)用潛力。2.利用AlInN/GaN異質(zhì)結(jié)具有較薄勢壘層,表面電荷對溝道二維電子氣濃度的調(diào)控更靈敏,設(shè)計了一種超靈敏的磷酸根離子電化學(xué)傳感器。通過對該傳感器的I-V特性曲線測試,并將它的測試結(jié)果與AlGaN HEMT傳感器進行對比,發(fā)現(xiàn)AlInN/GaN HEMT傳感器對磷酸根離子的選擇、識別性更高,抗干擾能力更強。這主要因為AlInN/GaN異質(zhì)結(jié)具有比較薄的勢壘層,表面電荷距離溝道2DEG比較近,有利于2DEG濃度的調(diào)控。AlInN/GaN、AlGaN/GaN HEMT傳感器的靈敏度分別為60.831 μA/mg·L-1、3.191 μA/mg·L-1,檢測極限分別為0.09μg/L、 1.97μg/L。這說明具有超薄勢壘層的AlInN/GaN HEMT傳感器比AlGaN/GaN HEMT傳感器更靈敏,在離子傳感器方面具有潛在的應(yīng)用優(yōu)勢。3.改變功能單體和模板離子合成三氯乙酸離子印跡聚合物,采用新型表面印跡技術(shù)將它修飾到AlInN/GaN HEMT器件的無柵區(qū),制備了三氯乙酸陰離子電化學(xué)傳感器。通過測得的Ⅰ-Ⅴ特性曲線對傳感器的性能進行研究,實驗結(jié)果表明：該傳感器對三氯乙酸陰離子具有比較高的選擇識別,但對二氯乙酸陰離子、硫酸根等干擾離子幾乎不識別,這是因為離子印跡聚合物對模板離子具有特殊的選擇、識別特性。AlInN/GaN HEMT傳感器的靈敏度為51.01 μA/mg·L-1,檢測極限達0.01μtg／L。這說明AlInN/GaN HEMT傳感器能夠快速、靈敏的實現(xiàn)對三氯乙酸陰離子的檢測,為飲用水中鹵乙酸的在線監(jiān)測提供了一種新的方法。
[Abstract]:Water is the source of life, almost all the animals and plants on the earth can not do without it.But with the growth of population, this limited water resource is decreasing day by day. With the rapid development of industrial and agricultural technology, all kinds of poisonous and harmful substances are being discharged into the ground, rivers, lakes, reservoirs, groundwater and surface water pollution will be aggravated.Although tap water is sanitized, disinfection does not remove heavy metal ions, but also brings some harmful disinfection by-products to human health, such as halogenated acetic acid, bromate, chlorate and other anions.They have been proved to be genotoxic, carcinogenic or reproductive toxicity.Under this background, the electrochemical sensor was constructed by using ion-imprinted polymer combined with the advantages of GaN HEMT device to detect the harmful anions of phosphate and trichloroacetate.The sensor has the advantages of high selectivity, high sensitivity, low detection limit, stability and repeated use.The main contents and results of this paper are as follows: 1.Based on the characteristics of phosphate ion imprinted polymer and AlGaN/GaN HEMT devices, a novel electrochemical sensor of phosphate ion. AlGaN / gan HEMT sensor was designed and characterized by Keithley 2600A digital source meter.The experimental results show that the sensor has high recognition selectivity for phosphate ions, and no recognition for interference ions such as high manganate and sulfate, which is due to the unique recognition of template ions by ionic imprinted polymers.The sensor has a sensitivity of 3.191 渭 A/mg L ~ (-1) and a detection limit of 1.97 渭 g 路L ~ (-1), showing high selectivity, sensitivity and stability to the phosphate ion. It has great application potential in the field of on-line monitoring of phosphate ion in drinking water.Based on the thin barrier layer of AlInN/GaN heterojunction and the sensitivity of surface charge to the control of channel two-dimensional electron gas concentration, a hypersensitive phosphate ion electrochemical sensor was designed.The I-V characteristic curve of the sensor is tested and compared with that of AlGaN HEMT sensor. It is found that the selection of phosphate ion by AlInN/GaN HEMT sensor is more recognizable and has stronger anti-interference ability.This is mainly due to the fact that the AlInN/GaN heterojunction has a thin barrier layer, and the surface charge is close to the channel 2DEG. The sensitivity of the AlInN / gan / gan HEMT sensor is 60.831 渭 A/mg L ~ (-1) ~ 3.191 渭 A/mg ~ (-1), and the detection limit is 0.09 渭 g / L and 1.97 渭 g 路L ~ (-1), respectively.This indicates that AlInN/GaN HEMT sensor with ultra-thin barrier layer is more sensitive than AlGaN/GaN HEMT sensor and has potential application advantage in ion sensor.Trichloroacetic acid ion-imprinted polymers were synthesized by changing functional monomers and template ions. The novel surface imprinting technique was applied to fabricate trichloroacetic acid anion electrochemical sensors into the gridless region of AlInN/GaN HEMT devices.The performance of the sensor was studied by the measured 鈪，

本文編號：1741792