本文選題：絕緣體上鍺　切入點(diǎn)：鍺濃縮　出處：《蘭州大學(xué)》2016年博士論文　論文類(lèi)型：學(xué)位論文

【摘要】：“后22nm”時(shí)代,CMOS技術(shù)將從新型器件結(jié)構(gòu)和新型溝道材料兩方面來(lái)解決傳統(tǒng)硅CMOS面臨的問(wèn)題。根據(jù)國(guó)際半導(dǎo)體技術(shù)發(fā)展路線(xiàn)圖(ITRS),溝道材料將在15納米的節(jié)點(diǎn)后逐步由應(yīng)變硅材料過(guò)渡到新型高遷移率Ge/III-V半導(dǎo)體材料。絕緣體上鍺(GOI)作為一種新型高遷移率襯底材料,結(jié)合了Ge材料高遷移率和SOI襯底CMOS兼容的優(yōu)勢(shì),有望逐步成為主要的溝道材料。除應(yīng)用于高速CMOS器件,GOI還在III-V基高速光電探測(cè)器、太陽(yáng)能電池等方面具有更佳表現(xiàn)。鍺濃縮技術(shù)是最常用也是最有望實(shí)現(xiàn)大規(guī)模生產(chǎn)超薄GOI的制備方法之一。然而由于傳統(tǒng)鍺濃縮過(guò)程中,SiGe/SOI界面的失配位錯(cuò)會(huì)逐步向上穿透,形成很高的缺陷密度(TDD107cm-2),影響最終器件性能。本論文正是在上述背景下,結(jié)合“極大規(guī)模集成電路制造設(shè)備及成套工藝”國(guó)家科技重大專(zhuān)項(xiàng)“新型混晶SOI與GOI高遷移率器件工藝開(kāi)發(fā)”課題,開(kāi)展了深入細(xì)致的探索和研究工作,本文的主要內(nèi)容如下:1、提出改進(jìn)的鍺濃縮技術(shù),并成功制備了8英寸高遷移率GOI襯底晶圓片。由傳統(tǒng)的對(duì)SiGe/SOI進(jìn)行濃縮改為直接對(duì)SGOI進(jìn)行濃縮,得到高質(zhì)量的GOI襯底材料。測(cè)試結(jié)果表明,所得GOI襯底具有低的表面粗糙度(1nm)和良好的結(jié)晶質(zhì)量;缺陷密度相較于傳統(tǒng)濃縮方法降低了近兩個(gè)數(shù)量級(jí)(由1×107cm-2降低至7×105cm-2)。研究了濃縮過(guò)程中缺陷產(chǎn)生的機(jī)制,經(jīng)測(cè)試分析,認(rèn)為層間失配位錯(cuò)密度降低和應(yīng)力釋放是缺陷密度降低的主要原因。濃縮制備方法、材料表征以及性能分析詳見(jiàn)第二章。2、在制備的GOI襯底上成功制備了Pseudo-MOSFET和源/漏肖特基器件,研究GOI材料的高遷移率特性及其在MOSFET器件中的應(yīng)用。將改進(jìn)型的30nm超薄GOI材料作為襯底制備了背柵結(jié)構(gòu)的Pseudo-MOSFET器件,利用CMOS工藝制備了器件,所獲器件的驅(qū)動(dòng)電流相較于傳統(tǒng)GOI材料提高了一倍。利用“Y值法”分析得出空穴遷移率為280cm2/Vs,相較于傳統(tǒng)工藝GOI材料提高了56%。利用低溫CMOS工藝、Al2O3和HfO2作為柵介質(zhì),制備了正柵結(jié)構(gòu)的肖特基源/漏結(jié)GOI pMOS器件,研究了器件的高遷移率特性,所獲器件的驅(qū)動(dòng)電流相較于相同結(jié)構(gòu)的SOI器件提高了約100倍。器件制備過(guò)程和器件特性分析詳見(jiàn)第三章。3、利用鍺濃縮技術(shù)與CMOS工藝,制備出了高質(zhì)量、長(zhǎng)度直徑可控的Ge-SiO2“核-殼”結(jié)構(gòu)納米線(xiàn)陣列,設(shè)計(jì)制作了可實(shí)時(shí)檢測(cè)、高靈敏度的生物傳感器件。通過(guò)對(duì)納米線(xiàn)表面功能化修飾,器件可以有效地分辨不同的pH值。將此器件進(jìn)一步用于DNA雜交檢測(cè),發(fā)現(xiàn)其具有極高的靈敏度,理論響應(yīng)極限達(dá)到5fM;對(duì)DNA雜交過(guò)程進(jìn)行特異性檢測(cè),可以有效分辨堿基完全匹配、一個(gè)錯(cuò)配及完全錯(cuò)配等不同情況,具有極高的檢測(cè)特異性。對(duì)DNA目標(biāo)物濃度、溶液離子濃度以及DNA探針濃度等參數(shù)進(jìn)行優(yōu)化,檢測(cè)極限提高到了0.5fM。納米線(xiàn)制備、生物傳感器制備、檢測(cè)方法及傳感特性詳見(jiàn)第四章。
[Abstract]:In the "post-22nm" era, CMOS technology will solve the problems faced by traditional silicon CMOS from two aspects: new device structure and new channel material. According to the international semiconductor technology development roadmap, the channel material will be gradually formed after 15 nanometers of nodes. The strained silicon material is transitioned to a new type of high mobility Ge/III-V semiconductor material. Germanium on insulator is used as a new type of high mobility substrate material. Combining the advantages of GE material with high mobility and CMOS compatibility with SOI substrate, it is expected to gradually become the main channel material. Besides its application in high speed CMOS devices, it can also be used in III-V based high speed photodetectors. Germanium enrichment is one of the most commonly used and promising methods to produce ultra-thin GOI in large scale. However, the mismatch of SiGe / SOI interface will gradually penetrate upward in the traditional process of GE concentration. A high defect density (TDD107cm-2) is formed, which affects the performance of the final device. Combined with the project of "process development of new type mixed-crystal SOI and GOI high mobility device", the research work was carried out deeply and meticulously, according to the topic of "maximum scale integrated circuit manufacturing equipment and complete process", which is a major national science and technology project. The main contents of this paper are as follows: 1. An improved germanium enrichment technique is proposed, and an 8-inch high mobility GOI substrate wafer has been successfully prepared. High quality GOI substrates were obtained. The results show that the obtained GOI substrates have a low surface roughness of 1 nm) and good crystallization quality. The defect density is reduced by nearly two orders of magnitude (from 1 脳 10 7 cm -2 to 7 脳 10 5 cm ~ (-2)) compared with the traditional concentration method. The mechanism of defect generation in the process of concentration is studied and tested. It is considered that the decrease of interlaminar mismatch dislocation density and stress release are the main reasons for the decrease of defect densities. The preparation method of concentration, characterization of materials and analysis of properties are described in Chapter 2. The Pseudo-MOSFET and source / drain Schottky devices have been successfully fabricated on the prepared GOI substrates. The high mobility characteristics of GOI materials and their applications in MOSFET devices were studied. The modified 30nm ultra-thin GOI materials were used as substrates to fabricate Pseudo-MOSFET devices with back-gate structure, and CMOS process was used to fabricate the devices. The driving current of the obtained device is twice as high as that of the traditional GOI material. By "Y value method", the hole mobility of 280 cm ~ 2 / V _ s is obtained, which is 56% higher than that of the traditional GOI material. The low temperature CMOS process is used as the gate dielectric for Al _ 2O _ 3 and HfO2. Schottky source / drain junction GOI pMOS devices with positive gate structure have been fabricated and their high mobility characteristics have been studied. The driving current of the obtained device is about 100 times higher than that of the SOI device with the same structure. The fabrication process of the device and the analysis of the device characteristics are described in Chapter 3. The high quality of the device is obtained by using the germanium concentration technology and the CMOS process. A Ge-SiO2 "core-shell" nanowire array with controllable length and diameter was designed and fabricated for real-time detection and high sensitivity. The device can effectively distinguish different pH values. Further application of the device to DNA hybridization shows that it has a very high sensitivity and the theoretical response limit is up to 5fM. The specific detection of DNA hybridization process is carried out. It can effectively distinguish different cases such as base perfect matching, one mismatch and complete mismatch, and has very high detection specificity. The parameters such as DNA target concentration, solution ion concentration and DNA probe concentration are optimized. The detection limit is raised to 0.5fM.The preparation of nanowires, biosensors, detection methods and sensing characteristics are described in Chapter 4th.
【學(xué)位授予單位】：蘭州大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2016
【分類(lèi)號(hào)】：TP212.3;TN304.11

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本文編號(hào)：1575377