本文選題：多場(chǎng)耦合　切入點(diǎn)：西門子反應(yīng)器　出處：《昆明理工大學(xué)》2016年博士論文　論文類型：學(xué)位論文

【摘要】：作為一種性能優(yōu)越的半導(dǎo)體材料,多晶硅被廣泛地應(yīng)用于電子及光伏產(chǎn)業(yè)。改良西門子法是目前生產(chǎn)多晶硅的主流技術(shù),其中三氯氫硅和氫氣在西門子反應(yīng)器中發(fā)生化學(xué)氣相沉積過(guò)程是該工藝的關(guān)鍵工段,然而就如何提高硅沉積速率、降低還原能耗是目前工業(yè)生產(chǎn)遇到的最大挑戰(zhàn)和難題。為了更有效地降低還原過(guò)程能耗、減少多晶硅生產(chǎn)成本,國(guó)內(nèi)外科技工作者針對(duì)還原工藝進(jìn)行了大量深入的研究。尤其是近年來(lái),隨著多晶硅產(chǎn)能的快速釋放及國(guó)際國(guó)內(nèi)形勢(shì)的變化,多晶硅價(jià)格一直下降,逐步降低到成本線以下。在這種情況下,節(jié)能降耗、降低成本更加成為多晶硅企業(yè)的當(dāng)務(wù)之急和迫切需要。目前,計(jì)算機(jī)數(shù)值模擬技術(shù)已廣泛應(yīng)用于各種工程實(shí)際中,尤其在實(shí)驗(yàn)條件或?qū)嶒?yàn)技術(shù)存在困難的情況下,計(jì)算機(jī)模擬方法往往是最為有效的方法。隨著西門子反應(yīng)器監(jiān)測(cè)水平的提高和復(fù)雜現(xiàn)象機(jī)理研究的深入,應(yīng)該逐漸拋棄原有靠經(jīng)驗(yàn)指導(dǎo)西門子反應(yīng)器實(shí)際生產(chǎn)的傳統(tǒng)方式,建立起多晶硅化學(xué)氣相沉積過(guò)程仿真體系,使其具備模型預(yù)測(cè)功能,從而能夠細(xì)致分析爐況、提供豐富信息。為此,本文針對(duì)SiHCl3-H2西門子體系化學(xué)氣相沉積過(guò)程,開(kāi)展多場(chǎng)耦合下西門子反應(yīng)器傳熱及多晶硅化學(xué)氣相沉積基礎(chǔ)理論研究。以云南某多晶硅生產(chǎn)企業(yè)實(shí)際生產(chǎn)用西門子反應(yīng)器為研究對(duì)象,耦合流動(dòng)、傳熱以及傳質(zhì)過(guò)程,建立多物理場(chǎng)耦合數(shù)學(xué)模型,從多角度和層次進(jìn)行仿真,擬實(shí)地預(yù)見(jiàn)和再現(xiàn)西門子反應(yīng)器爐內(nèi)狀態(tài)。論文應(yīng)用計(jì)算流體力學(xué)(CFD)和數(shù)值傳熱學(xué)(NHT)理論剖析了西門子反應(yīng)器還原過(guò)程,開(kāi)展了以下幾方面的研究工作：首先建立了西門子反應(yīng)器中對(duì)流傳熱模型,并將模型預(yù)測(cè)得到的實(shí)驗(yàn)室規(guī)模西門子反應(yīng)器的總能耗與公開(kāi)文獻(xiàn)實(shí)驗(yàn)數(shù)據(jù)進(jìn)行對(duì)比,其相對(duì)誤差都在1%以內(nèi),說(shuō)明所建立的對(duì)流傳熱模型有效。分析了實(shí)驗(yàn)室規(guī)模西門子反應(yīng)器中影響對(duì)流熱損失主要因素,獲得了單位產(chǎn)品多晶硅對(duì)流能耗的影響規(guī)律。同時(shí)應(yīng)用該對(duì)流傳熱模型到工業(yè)規(guī)模西門子反應(yīng)器中,預(yù)測(cè)獲得了12對(duì)棒以及24對(duì)棒西門子反應(yīng)器中各環(huán)硅棒表面單位面積對(duì)流熱損失的變化趨勢(shì)。建立了工業(yè)規(guī)模西門子反應(yīng)器的輻射傳熱模型,重點(diǎn)分析了目前生產(chǎn)實(shí)踐中常用的12對(duì)棒和24對(duì)棒兩種爐型。根據(jù)目前工業(yè)應(yīng)用的西門子反應(yīng)器中硅棒圓周排布原則,分析了不同爐型反應(yīng)器硅棒的排布方式,揭示了硅棒圓周排布的規(guī)律。分析了12對(duì)棒西門子反應(yīng)器中硅棒的輻射行為,探究了硅棒半徑以及反應(yīng)器壁發(fā)射率對(duì)內(nèi)、外環(huán)硅棒表面單位面積平均輻射熱損失的影響規(guī)律,結(jié)果表明,增大硅棒最終沉積半徑、降低反應(yīng)器內(nèi)壁發(fā)射率對(duì)降低硅棒表面輻射熱損失具有明顯效果。在12對(duì)棒反應(yīng)器中硅棒輻射行為分析的基礎(chǔ)上,對(duì)工業(yè)規(guī)模24對(duì)棒西門子反應(yīng)器中硅棒的輻射行為也進(jìn)行了相應(yīng)理論分析,結(jié)果表明,增大反應(yīng)器中硅棒數(shù)目同時(shí)降低外環(huán)硅棒數(shù)比例,對(duì)降低硅棒表面單位面積平均輻射熱損失也具有明顯效果。同時(shí)對(duì)現(xiàn)有的24對(duì)棒西門子反應(yīng)器1#中硅棒排布方式進(jìn)行優(yōu)化,優(yōu)化后的西門子反應(yīng)器2#中硅棒的平均輻射熱損失更低,理論節(jié)能近5%。在對(duì)流和輻射傳熱研究的基礎(chǔ)上,為了進(jìn)一步了解西門子反應(yīng)器電加熱過(guò)程中硅棒的熱電行為,建立了硅棒的直流電加熱模型,并將預(yù)測(cè)的12對(duì)棒西門子反應(yīng)器各環(huán)硅棒的單位電壓與工業(yè)實(shí)際測(cè)量數(shù)據(jù)進(jìn)行對(duì)比,其相對(duì)誤差都在10%以內(nèi),說(shuō)明所建立的直流電加熱模型有效。研究了工業(yè)規(guī)模12對(duì)棒和24對(duì)棒西門子反應(yīng)器中硅棒輻射位置和反應(yīng)器壁發(fā)射率對(duì)電加熱過(guò)程的影響,獲得了符合工業(yè)實(shí)際不同條件下各環(huán)硅棒電流-電壓操作曲線。通過(guò)研究發(fā)現(xiàn)：隨著硅棒半徑逐漸增大,最外環(huán)硅棒內(nèi)部徑向溫度梯度要明顯高于其它環(huán)硅棒；降低反應(yīng)器壁發(fā)射率,可以明顯降低硅棒內(nèi)部溫度梯度、硅棒兩端電壓以及相應(yīng)電流；對(duì)于圓周排布的西門子反應(yīng)器而言,增大硅棒總數(shù)目同時(shí)降低最外環(huán)硅棒數(shù)比例,可以明顯降低內(nèi)環(huán)硅棒徑向溫度梯度,且能相應(yīng)降低通過(guò)硅棒的電流和硅棒兩端的電壓,從而達(dá)到節(jié)能降耗的目標(biāo)。最后,結(jié)合動(dòng)量、熱量、質(zhì)量傳遞模型,耦合建立的SiHCl3-H2體系的反應(yīng)動(dòng)力學(xué)模型,構(gòu)成了完整的傳遞-動(dòng)力學(xué)模型。應(yīng)用該模型分析了沉積溫度、進(jìn)氣速度、進(jìn)氣組分、壓強(qiáng)等因素對(duì)CVD過(guò)程硅沉積速率的影響。在準(zhǔn)確獲悉西門子反應(yīng)器流場(chǎng)、溫度場(chǎng)的基礎(chǔ)上,將流體力學(xué)和反應(yīng)動(dòng)力學(xué)模型應(yīng)用于多晶硅生長(zhǎng)過(guò)程模擬,建立生長(zhǎng)初始條件和反應(yīng)過(guò)程各組分的理論關(guān)系。
[Abstract]:As a kind of semiconductor material with excellent performance, polysilicon is widely used in electronic and photovoltaic industry. The improved SIEMENS method is the mainstream technology of polysilicon production, including trichlorosilane and hydrogen in the SIEMENS reactor in a chemical vapor deposition process is the key section of the process, however, how to improve the deposition rate of silicon, reducing energy consumption is one of the biggest challenges and problems encountered in current industrial production. In order to effectively reduce the energy consumption reduction process, reduce the production cost of polysilicon, the domestic and foreign research in-depth for large amount of reduction process. Especially in recent years, with the change of the rapid release of polysilicon production capacity and the international and domestic situation, polysilicon prices have decreased gradually to reduce the cost of energy saving in the following lines. In this case, reduce the cost of polysilicon enterprises become more and more urgent matter and Urgent need. At present, simulation technology has been widely used in practical engineering in computer numerical, especially in the presence of experimental conditions and experimental techniques under difficult circumstances, the computer simulation method is often the most effective method. With the research on the mechanism of reaction to improve the monitoring level for SIEMENS and complex phenomena in depth, we should abandon the traditional mode of the original rely on the experience of guiding SIEMENS reactor of actual production, establish a simulation system of polysilicon chemical vapor deposition process, which has a model prediction function, so as to provide a detailed analysis of the furnace condition, rich information. Therefore, according to the SIEMENS SiHCl3-H2 system of chemical vapor deposition process in this paper, carry out theoretical research of SIEMENS reactor heat transfer and polysilicon chemical gas sedimentary facies based multi field coupling. In Yunnan a polysilicon production enterprise actual production by SIEMENS reactor as the research object, Coupled flow, heat transfer and mass transfer process, the establishment of multi physics field coupling mathematical model, from multi angle and level simulation, to anticipate and reproduce the SIEMENS field reactor furnace. The application of computational fluid dynamics (CFD) and numerical heat transfer (NHT) theory to analyze the reduction process of SIEMENS reactor, the research work has been carried out the following aspects: first, SIEMENS convection heat transfer reactor model was established, and compared the total energy consumption prediction model for the SIEMENS laboratory scale reaction and published experimental data, the relative error is less than 1%, indicating the convective heat transfer model is established. Analyzed the main factors affecting the convective heat loss reaction SIEMENS is in a laboratory scale, influence obtained unit product energy consumption. At the same time the application of polysilicon convection of the convective heat transfer model to industrial scale against SIEMENS Is, was predicted the trends of 12 units on the surface of silicon rod rod and 24 ring rod of SIEMENS in the reactor area of convective heat loss. A radiation heat transfer model for the SIEMENS reaction on an industrial scale, with emphasis on the production practice of the commonly used 12 sticks and 24 of two rod furnace according to the SIEMENS reactor silicon rod circular distribution principle of present industrial application, analyzes the arrangement of different type reactor silicon rods, silicon rods reveal the circular distribution law. Analysis of 12 pairs of SIEMENS stick reactor silicon rod radiation behavior, explores the silicon rod radius and reactor wall emissivity on the inside that rule, the outer surface of the silicon rod unit area average radiation heat loss. The results showed that the increase of silicon rod final deposition radius, reduce the reactor wall emissivity to reduce the heat loss of silicon rod surface radiation has obvious effect in 12. Based on analysis of the reactor rod silicon rod radiation behavior, the industrial scale of 24 bar SIEMENS reactor silicon rod radiation behavior has also carried on the corresponding theoretical analysis, the results show that the increase of reactor and reduce the number of silicon rod outer ring silicon rod number proportion, to reduce the silicon rod surface radiation heat loss per unit area also has obvious effect. At the same time, the existing 24 bar of SIEMENS reactor 1# silicon rod arrangement is optimized, the average heat loss is lower after the optimization of SIEMENS reactor 2# silicon rod, saving nearly 5%. based on the theory of heat convection and radiation research, in order to further understand the SIEMENS reactor electric heating process of thermoelectric silicon rod the behavior, established the silicon rod DC heating model, and the prediction of the 12 great SIEMENS reactor each ring of silicon rod unit voltage and industrial actual measurement data are compared, the The errors are less than 10%, indicating the DC heating model is established. On the 12 and 24 industrial scale to stick on SIEMENS silicon rod radiation reactor rod position and reactor wall emissivity effects on electric heating process, was consistent with the actual conditions of the different industrial silicon rod ring current voltage operation curve. It is found that with the silicon rod radius increases gradually, the outer ring of the silicon rod internal radial temperature gradient was higher than that of other ring silicon rod; reduce the reactor wall emissivity, can significantly reduce the temperature gradient inside the silicon rods, silicon rod ends voltage and current; for SIEMENS reactor circle configuration. Increase the total number of silicon rods and reduce the proportion of the number of silicon rod outer ring, inner silicon rod can significantly reduce the radial temperature gradient, and can decrease the silicon rod through the voltage current and the silicon rod ends, so as to achieve the festival The energy saving targets. Finally, combined with the momentum, heat and mass transfer model, kinetic model of coupled SiHCl3-H2 system established, constitute a complete transfer kinetics model. The model is used to analyze the deposition temperature, air velocity, air composition, the effect of pressure on the deposition rate of silicon in accurate CVD process. SIEMENS was informed that the reactor flow, based on the temperature field, fluid mechanics and reaction dynamics model is applied to polycrystalline silicon growth process simulation, establish the theoretical relationship between the growth of each initial condition and the reaction process.

【學(xué)位授予單位】：昆明理工大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2016
【分類號(hào)】：TN304.12
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本文編號(hào)：1564970