本文關(guān)鍵詞： 銻化物 金屬有機(jī)化學(xué)氣相沉積 成核 熱光伏電池 模擬　出處：《吉林大學(xué)》2016年博士論文　論文類型：學(xué)位論文

【摘要】：銻化物材料作為窄禁帶直接帶隙半導(dǎo)體,具有較小的禁帶寬度和載流子有效質(zhì)量,較大的電子飽和漂移速度及電子遷移率等優(yōu)良的光電性能,在紅外激光器、光電探測(cè)器、熱光伏電池以及高速電子晶體管等方面具有重要應(yīng)用。不過銻化物襯底價(jià)格高、半絕緣襯底難制備、晶格常數(shù)大導(dǎo)致其難于異質(zhì)外延,其應(yīng)用因此受到了很大限制。而Si材料經(jīng)過多年發(fā)展,在集成電路相關(guān)領(lǐng)域發(fā)展日益成熟,具有材料價(jià)格低廉、來源廣泛、晶圓尺寸大、加工工藝成熟等優(yōu)勢(shì)。因此將銻化物材料與Si材料相結(jié)合發(fā)揮各自優(yōu)勢(shì)具有非常巨大的發(fā)展?jié)摿蛻?yīng)用前景。本文利用MOCVD技術(shù)首先研究了Si上Ga Sb的初期成核,分別從生長(zhǎng)參數(shù)(生長(zhǎng)溫度、氣相III/V、有機(jī)源輸入量)、過程參數(shù)(生長(zhǎng)時(shí)間、退火時(shí)間)以及其他相關(guān)參數(shù)對(duì)Ga Sb初期成核的形貌和數(shù)量的影響,并從熱力學(xué)和動(dòng)力學(xué)的角度分析研究其中所涉及的成核機(jī)理。其次在Ga Sb襯底上制備了In Ga Sb薄膜,分別從生長(zhǎng)溫度、氣相V/III和氣相Ga/III等生長(zhǎng)參數(shù)研究了其對(duì)薄膜的表面形貌、結(jié)晶質(zhì)量、材料組分等性質(zhì)的影響。另外,使用PC1D軟件,結(jié)合Si、Ga Sb和In Ga Sb材料設(shè)計(jì)、模擬并優(yōu)化了Ga Sb/Ga In Sb單結(jié)和雙結(jié)(疊層)熱光伏電池,分析了電池中各層參數(shù)對(duì)單結(jié)和雙結(jié)疊層電池的輸出特性的影響,并根據(jù)模擬結(jié)果優(yōu)化器件結(jié)構(gòu)。
[Abstract]:As a narrow band gap semiconductor, antimonide has small band gap and carrier effective mass, large electron saturation drift velocity and electron mobility, etc., in infrared lasers, photodetectors, antimonides, antimonides, antimonides, antimonides and antimonides have good photoelectric properties, such as small band gap, carrier effective mass, large electron saturation drift velocity and electron mobility. Thermal photovoltaic cells and high speed electronic transistors have important applications. However, antimonide substrates are expensive, semi-insulating substrates are difficult to be fabricated, and large lattice constants make it difficult to heteroepitaxy. As a result, its application has been greatly restricted. After years of development, Si materials have developed increasingly mature in the related fields of integrated circuits, with low cost, wide sources and large wafer size. Therefore, it has great development potential and application prospect to combine antimonide materials with Si materials. In this paper, the initial nucleation of Ga SB on Si is studied by using MOCVD technology. The effects of growth parameters (growth temperature, gas phase III / V, organic source input), process parameters (growth time, annealing time) and other related parameters on the morphology and quantity of Ga SB nucleation were studied. The nucleation mechanism of the films was studied by thermodynamics and kinetics. Secondly, in Ga SB thin films were prepared on GASB substrates. The surface morphology of the films was investigated by the growth parameters such as growth temperature, gas phase V / III and gas phase Ga/III, respectively. In addition, PC1D software was used to simulate and optimize Ga Sb/Ga in SB single junction and double junction (stacked) photovoltaic cells, which were designed by combining with SiGa-Sb and in Ga-Sb materials. The effects of the parameters of each layer on the output characteristics of single-junction and double-junction laminated batteries are analyzed, and the structure of the devices is optimized according to the simulation results.
【學(xué)位授予單位】：吉林大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2016
【分類號(hào)】：TN304.055;TM914
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本文編號(hào)：1543747