本文關(guān)鍵詞： 濕法制備 晶態(tài)薄膜 氧化鋅錫 氧化錫 薄膜晶體管(TFT)　出處：《清華大學(xué)》2016年博士論文　論文類型：學(xué)位論文

【摘要】：濕法制備金屬氧化物薄膜及晶體管器件具有工藝簡(jiǎn)單、化學(xué)組分易于調(diào)控、成本低、適應(yīng)大規(guī)模生產(chǎn)等優(yōu)點(diǎn),在平板顯示有源驅(qū)動(dòng)電路中有廣闊的應(yīng)用前景。近年來,濕法制備的氧化物薄膜晶體管(TFT)器件性能已有很大提高,然而大多數(shù)高質(zhì)量氧化物半導(dǎo)體材料組成元素中含有稀缺、昂貴的銦,而且當(dāng)前報(bào)道的許多高遷移率氧化物TFT器件工作模式為耗盡型,無法應(yīng)用于有源驅(qū)動(dòng)。本論文圍繞非銦體系的晶態(tài)金屬氧化物半導(dǎo)體薄膜的濕法制備,深入研究了物相轉(zhuǎn)變過程、氧化物薄膜微觀結(jié)構(gòu)、絕緣層/半導(dǎo)體層表界面性質(zhì),開發(fā)了新型前驅(qū)體溶液體系并優(yōu)化了制備工藝,獲得了高性能氧化鋅錫和氧化錫TFT器件。主要成果如下:1.首次報(bào)道了前驅(qū)體溶液中水分添加對(duì)多晶氧化鋅錫薄膜結(jié)構(gòu)及TFT器件性能的影響。選用二水合醋酸鋅和氯化亞錫為前驅(qū)體材料制備氧化鋅錫薄膜,發(fā)現(xiàn)分段式升溫?zé)崽幚砜梢哉T導(dǎo)薄膜結(jié)晶,向前驅(qū)體溶液中添加適量水分能促進(jìn)三元尖晶石型Zn2SnO4晶相的形成及晶粒生長(zhǎng),得到致密的晶態(tài)氧化鋅錫薄膜。制備了基于原子層沉積氧化鋁絕緣層的頂柵底接觸TFT器件,發(fā)現(xiàn)向前驅(qū)體溶液中添加1.67 M水后,器件中載流子遷移率從0.92 cm2V-1s-1提高到2.11 cm2V-1s-1,提升了130%。進(jìn)一步向前驅(qū)體溶液中摻雜5%釔或鑭后,器件在正向偏壓應(yīng)力測(cè)試1小時(shí)后閾值電壓漂移由1.05 V分別下降到0.33 V和0.17 V。2.使用濕法加工的氧化鋁絕緣層,制備得到高性能氧化鋅錫TFT器件�；谘趸\錫前驅(qū)體中水分添加和分段式升溫?zé)崽幚淼膮f(xié)同作用,在Al2O3絕緣層上制備了表面形貌平整、結(jié)構(gòu)致密、傳輸通道暢通、氧缺陷含量較少的多晶氧化鋅錫薄膜。當(dāng)前驅(qū)體溶液中Zn/Sn摩爾比例為1:1時(shí),底柵頂接觸TFT器件的平均載流子遷移率達(dá)到了52.5 cm2 V-1 s-1,開關(guān)電流比為2.1×105,閾值電壓為2.3 V。3.首次報(bào)道使用2-乙基己酸亞錫作為氧化錫TFT器件半導(dǎo)體層前驅(qū)體材料,制備得到高性能氧化錫TFT器件。系統(tǒng)研究了熱處理溫度、前驅(qū)體濃度等條件對(duì)薄膜結(jié)構(gòu)的影響,優(yōu)化后獲得了結(jié)構(gòu)致密、缺陷含量極少的多晶氧化錫薄膜。采用濕法制備的氧化鋁絕緣層,得到了高性能、增強(qiáng)型工作模式的氧化錫TFT器件,并成功實(shí)現(xiàn)了對(duì)單個(gè)有機(jī)發(fā)光二極管的亮度調(diào)控。氧化錫TFT器件的平均載流子遷移率達(dá)到96.4 cm2 V-1 s-1,開關(guān)電流比為2.2×106,閾值電壓為1.7 V。該遷移率是目前報(bào)道的濕法制備的氧化錫TFT器件中的最高值。
[Abstract]:The fabrication of metal oxide thin films and transistors by wet method has the advantages of simple process, easy control of chemical components, low cost and suitable for large-scale production. It has a broad application prospect in flat panel display active drive circuits. The properties of oxide thin film transistor (TFT) devices fabricated by wet process have been greatly improved. However, most elements of high quality oxide semiconductor materials contain rare and expensive indium. Moreover, many of the reported high mobility oxide TFT devices are depleted and cannot be used for active drive. This thesis focuses on the wet fabrication of crystalline metal-oxide semiconductor films in non-indium systems. The process of phase transition, the microstructure of oxide film, the interface properties of insulator / semiconductor layer were studied, a new precursor solution system was developed and the preparation process was optimized. High performance ZnO and tin oxide TFT devices have been obtained. The main results are as follows: 1. For the first time, the effects of water addition in precursor solution on the structure of polycrystalline zinc tin oxide films and the properties of TFT devices are reported. Zinc tin oxide thin films were prepared by using stannous chloride as precursor material. It is found that segmental heating treatment can induce the crystallization of the film, and adding proper moisture to the precursor solution can promote the formation of ternary spinel Zn2SnO4 crystal phase and grain growth. Dense ZnO thin films were obtained. A top-gate bottom contact TFT device based on atomic layer deposited alumina insulator was fabricated. It was found that 1.67m water was added to the precursor solution. The carrier mobility in the device increased from 0.92 cm2V-1s-1 to 2.11 cm2V-1s-1.The carrier mobility increased by 130. Further doping of 5% yttrium or lanthanum into the precursor solution, The threshold voltage drift of the device decreased from 1.05 V to 0.33 V and 0.17 V. 2 after 1 hour of forward bias stress test. High performance ZnO TFT devices were fabricated. Based on the synergistic effect of water addition in ZnO precursor and segmental heating treatment, the surface morphology of Al2O3 was smooth, the structure was compact, and the transmission channel was smooth. Polycrystalline zinc tin oxide thin films with less oxygen defect. When the molar ratio of Zn/Sn in precursor solution is 1: 1, The average carrier mobility of bottom gate top contact TFT device is 52.5 cm2 V-1 s-1, the switching current ratio is 2.1 脳 10 5, and the threshold voltage is 2.3 V. 3. It is reported for the first time that stannous 2-ethylcaproate is used as semiconductor layer precursor material for TFT devices. High performance tin oxide TFT devices were fabricated. The effects of heat treatment temperature and precursor concentration on the structure of the films were systematically studied. Polycrystalline tin oxide thin films with very little defect content. High performance and enhanced tin oxide TFT devices were obtained by wet preparation of alumina insulating layer. The average carrier mobility of tin oxide TFT device is 96.4 cm2 V-1 s-1, the switching current ratio is 2.2 脳 10 6, and the threshold voltage is 1.7 V. this mobility is reported by wet method. The maximum value in the available tin oxide TFT device.
【學(xué)位授予單位】：清華大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2016
【分類號(hào)】：TN321.5;TB383.2

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