本文關(guān)鍵詞： InGaAs 晶格失配 兩步生長(zhǎng)法 低溫緩沖層 界面位錯(cuò) 失配應(yīng)力釋放 異質(zhì)結(jié)帶階結(jié)構(gòu)　出處：《中國(guó)科學(xué)院長(zhǎng)春光學(xué)精密機(jī)械與物理研究所》2017年博士論文　論文類(lèi)型：學(xué)位論文

【摘要】：In GaAs是1-3μm近紅外波段重要的探測(cè)材料。高In組分的InxGa_(1-x)As(x0.53)由于沒(méi)有同質(zhì)襯底,在生長(zhǎng)中則會(huì)出現(xiàn)晶格失配,使外延層質(zhì)量變差。晶格失配一直是半導(dǎo)體材料異質(zhì)外延中存在的主要問(wèn)題,緩沖層是一種很有效的方法,它釋放了異質(zhì)結(jié)中的失配應(yīng)力。各類(lèi)緩沖層的應(yīng)用在很大程度上解決了一些異質(zhì)外延中的晶格失配問(wèn)題,獲得了良好晶體質(zhì)量的外延層材料。盡管緩沖層已經(jīng)被研究和使用了很長(zhǎng)時(shí)間,但是目前仍然沒(méi)有一個(gè)完整的關(guān)于緩沖層作用機(jī)理或模型被提出,理論的缺失使我們無(wú)法進(jìn)一步深入、有目的地去優(yōu)化和設(shè)計(jì)緩沖層結(jié)構(gòu),無(wú)法對(duì)材料的異質(zhì)外延生長(zhǎng)作出更有效的改進(jìn)。本論文針對(duì)高In組分InGaAs材料外延中存在的晶格失配問(wèn)題,采用兩步生長(zhǎng)法,引入低溫緩沖層,在Ga As襯底上成功生長(zhǎng)了良好晶體質(zhì)量的In_0.78Ga_0.22As外延層,并對(duì)低溫緩沖層以及界面位錯(cuò)作了深入的分析和研究,取得了以下主要研究成果:1、采用兩步生長(zhǎng)法,利用MOCVD技術(shù)在GaAs襯底上生長(zhǎng)了高In組分的In_0.78Ga_0.22As外延層,實(shí)驗(yàn)結(jié)果表明,低溫緩沖層可以有效解決晶格失配,而且,不同厚度下,低溫緩沖層對(duì)失配應(yīng)力釋放的程度也存在差異:適當(dāng)厚度的低溫緩沖層可以有效解決晶格失配,使失配應(yīng)力得到很好的釋放,從而帶來(lái)具有良好晶體質(zhì)量的外延層;除此之外,適當(dāng)厚度的低溫緩沖層也可以有效抑制和減少位錯(cuò),從而降低外延層的位錯(cuò)密度。多種研究和表征手段表明,適當(dāng)厚度的低溫緩沖層是解決晶格失配、有效釋放應(yīng)力以及獲得良好外延層晶體質(zhì)量的關(guān)鍵。2、利用高分辨TEM對(duì)In_0.78Ga_0.22As/GaAs失配異質(zhì)結(jié)作了深入的研究和分析。從低溫下緩沖層的島狀生長(zhǎng)入手,以厚度為變化,研究了界面位錯(cuò)與緩沖層厚度、失配應(yīng)力釋放的關(guān)系,并提出了低溫緩沖層降低位錯(cuò)密度的作用機(jī)理。我們認(rèn)為:不同厚度低溫緩沖層下不同的應(yīng)力釋放程度要直接歸因于In_0.78Ga_0.22As/GaAs失配異質(zhì)結(jié)界面位錯(cuò)的類(lèi)型和排布,周期性極好的90°位錯(cuò)排列對(duì)于失配應(yīng)力釋放是最為有效的。低溫緩沖層島狀生長(zhǎng)中每個(gè)階段小島之間閉合掩埋的狀態(tài)直接決定了失配應(yīng)力的釋放,位錯(cuò)行為的變化帶來(lái)應(yīng)力釋放的變化。低溫緩沖層以及界面位錯(cuò)的機(jī)理分析與研究給予了我們優(yōu)化和控制緩沖層的大概方向和思路,從而達(dá)到對(duì)異質(zhì)結(jié)中失配應(yīng)力的調(diào)控,實(shí)現(xiàn)高質(zhì)量In GaAs失配材料的外延生長(zhǎng)。3、使用XPS和UPS對(duì)In_0.82Ga_0.18As/InP失配異質(zhì)結(jié)的界面帶階結(jié)構(gòu)排布進(jìn)行了測(cè)定,得到其價(jià)帶帶階為0.413 eV,由此推出其導(dǎo)帶帶階為0.457 eV,并分別從實(shí)驗(yàn)和理論方面驗(yàn)證了該結(jié)果的準(zhǔn)確性。最終得出In_0.82Ga_0.18As/InP異質(zhì)結(jié)界面表現(xiàn)出一個(gè)type-I型straddling帶階結(jié)構(gòu)。In_0.82Ga_0.18As/InP異質(zhì)結(jié)帶階結(jié)構(gòu)的確認(rèn)具有重要意義,能帶調(diào)控給予了我們控制載流子輸運(yùn)過(guò)程的可能性,從而為實(shí)現(xiàn)異質(zhì)結(jié)器件結(jié)構(gòu)及功能的多樣化和創(chuàng)新奠定了理論基礎(chǔ)。
[Abstract]:In GaAs is an important material for detection of 1-3 m near infrared band. High In component InxGa_ (1-x) As (x0.53) because there is no homogeneous substrate, growth appears lattice mismatch, the quality of epitaxial layer becomes worse. The lattice mismatch exists in heteroepitaxial semiconductor materials the main problem and the buffer layer is a very effective method, it releases the heterojunction mismatch stress. Application of buffer layer to a great extent to solve some of the heteroepitaxial lattice mismatch problem, obtained the good crystal quality of the epitaxial material. Although the buffer layer has been studied and used. For a long time, but there is not a complete on the buffer layer mechanism or model is put forward, the lack of theory make it impossible for us to go further, the design and optimization of buffer layer structure, not on heteroepitaxial growth of the material to make more effective The improvement in this paper. The high In component of InGaAs epitaxial materials in the lattice mismatch problem, using two step growth method, the introduction of low temperature buffer layer, In_0.78Ga_0.22As layer growing good crystal quality in Ga on the As substrate, and the low temperature buffer layer and interfacial dislocations were in-depth analysis and study. The main results are as follows: 1, using two step growth method on GaAs substrates of In_0.78Ga_0.22As epitaxial layer with high In component by using MOCVD technique, the experimental results show that the low temperature buffer layer can effectively solve the lattice mismatch, and different thickness, there are also differences on the mismatch stress release the degree of low temperature buffer layer: low-temperature buffer layer thickness can effectively solve the lattice mismatch, the mismatch stress is to be a good release, resulting in epitaxial layer has good crystal quality; in addition, the proper thickness of the low temperature The buffer layer can also effectively inhibit and reduce dislocation, thereby reducing the dislocation density of epitaxial layer. Show a variety of research and characterization of low temperature buffer layer thickness is to solve the problem of lattice mismatch, effective stress release and key.2 to obtain good epitaxial crystal quality, TEM made a thorough research and analysis of In_0.78Ga_0.22As/GaAs mismatch heterojunction with high resolution. The growth starting from the low temperature buffer layer of the island, with the thickness change, interface dislocation and buffer layer thickness on the relationship between mismatch stress release, the low temperature buffer layer down low dislocation density and the mechanism proposed. We think that different thickness under different low temperature buffer layer the stress release degree to direct attribution type and arrangement of In_0.78Ga_0.22As/GaAs mismatch heterointerface dislocation, 90 degrees dislocation periodic arrangement for excellent mismatch stress release is the most effective. Low temperature buffer layer between each stage of growth in Island Island closed buried state directly determines the mismatch stress release, change of dislocation behavior due to the change of stress release. Low temperature buffer layer and the mechanism of interface dislocation analysis and research has given us the optimization and control of buffer layer about the direction and ideas, so as to achieve regulation of heterojunction mismatch stress, to achieve high quality epitaxial In GaAs mismatch material growth of.3, XPS and UPS of In_0.82Ga_0.18As/InP mismatch heterostructure interface with order structures were determined by the valence band offset of 0.413 eV, which launched the band with order 0.457 and eV. From the experiment and theory to verify the accuracy of the results. Finally the In_0.82Ga_0.18As/InP heterostructure showed a type-I type straddling band structure of.In_0.82Ga_0.18As/InP heterojunction band offset. The confirmation of the structure is of great importance. The band regulation gives us the possibility of controlling the transport process of carriers, thus laying a theoretical foundation for the diversification and innovation of the structure and function of heterojunction devices.

【學(xué)位授予單位】：中國(guó)科學(xué)院長(zhǎng)春光學(xué)精密機(jī)械與物理研究所
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2017
【分類(lèi)號(hào)】：TN215

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