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新型聚合物絕緣材料的設(shè)計(jì)、制備及其在有機(jī)薄膜晶體管上的應(yīng)用研究

發(fā)布時(shí)間:2018-01-01 03:29

  本文關(guān)鍵詞:新型聚合物絕緣材料的設(shè)計(jì)、制備及其在有機(jī)薄膜晶體管上的應(yīng)用研究 出處:《吉林大學(xué)》2016年博士論文 論文類型:學(xué)位論文


  更多相關(guān)文章: 有機(jī)薄膜晶體管 絕緣層 聚合物材料 高介電常數(shù) 有機(jī)/無(wú)機(jī)雜化材料


【摘要】:有機(jī)集成電子工業(yè)為人類創(chuàng)造了一個(gè)智能的世界,其廣泛應(yīng)用于柔性顯示、微電子產(chǎn)品、射頻識(shí)別標(biāo)簽、生物傳感器和智能卡等領(lǐng)域。作為其中重要的邏輯單元器件,有機(jī)薄膜晶體管因其具有質(zhì)輕價(jià)廉,加工條件溫和和可大面積柔性顯示等優(yōu)點(diǎn)而受到廣泛關(guān)注。經(jīng)過(guò)幾十年的科研努力,有機(jī)薄膜晶體管的器件遷移率已經(jīng)突破單晶硅水平。然而相比于無(wú)機(jī)晶體管器件,有機(jī)薄膜晶體管依然存在著閾值電壓較高,有機(jī)半導(dǎo)體結(jié)晶較難控制等問(wèn)題。為解決此類問(wèn)題,開(kāi)發(fā)新型絕緣層材料就成為了研究重點(diǎn)。作為有機(jī)薄膜晶體管中重要的組成部分,絕緣層可以有效地降低器件的閾值電壓和操作電壓,而其表面不同的物理化學(xué)性質(zhì)也會(huì)對(duì)器件性能產(chǎn)生影響。因此,研制性能優(yōu)越的絕緣層材料對(duì)有機(jī)薄膜晶體管的發(fā)展具有重要意義。根據(jù)以上思路,本論文分別設(shè)計(jì)、制備了三種可作為有機(jī)薄膜晶體管絕緣層的聚合物材料,并對(duì)其性能進(jìn)行了研究。首先,我們?cè)O(shè)計(jì)合成了新型硅納米粒子與有機(jī)聚合物材料摻雜共混的有機(jī)/無(wú)機(jī)雜化絕緣層材料。其中,硅納米粒子表面修飾了能與聚合物發(fā)生反應(yīng)并形成化學(xué)鍵連的有機(jī)官能團(tuán),使納米粒子分散后固定于聚合物內(nèi)部,解決了制備成膜后納米粒子再團(tuán)聚的問(wèn)題。將納米粒子與甲基丙烯酸酯類聚合物共混獲得了可溶液加工的有機(jī)/無(wú)機(jī)雜化絕緣層材料。材料的介電常數(shù)可以通過(guò)加入的硅納米粒子的量來(lái)調(diào)控。隨后,我們?cè)O(shè)計(jì)并合成了多種含有聯(lián)苯結(jié)構(gòu)的甲基丙烯酸酯類衍生物單體。將其與甲基丙烯酸羥乙酯和甲基丙烯酸環(huán)氧丙酯進(jìn)行共聚獲得聚合物絕緣層材料。這種聚合物絕緣層材料可以通過(guò)溶液加工的方法制備成膜,并通過(guò)加熱使其結(jié)構(gòu)內(nèi)的環(huán)氧結(jié)構(gòu)開(kāi)環(huán)形成交聯(lián)網(wǎng)絡(luò),使材料熱固化。最終獲得的聚合物絕緣層薄膜擁有較好的抗溶劑性、良好的熱力學(xué)性能和較高的介電常數(shù)。最后,為了能在單一變量條件下研究半導(dǎo)體層結(jié)晶形態(tài)和晶區(qū)尺寸大小與有機(jī)薄膜晶體管器件性質(zhì)之間的規(guī)律,我們?cè)O(shè)計(jì)合成了一種具有聚合活性含蒽基結(jié)構(gòu)的有機(jī)單體。將其與甲基丙烯酸羥乙酯和甲基丙烯酸環(huán)氧丙酯進(jìn)行共聚,獲得一系列具有不同蒽基含量的聚合物絕緣層材料。此聚合物絕緣層材料可以通過(guò)溶液加工的方法制備成膜,并通過(guò)加熱使其結(jié)構(gòu)內(nèi)的環(huán)氧結(jié)構(gòu)開(kāi)環(huán)形成交聯(lián)網(wǎng)絡(luò)達(dá)到固化的目的。得到的一系列聚合物絕緣層薄膜的表面性質(zhì)和表面形貌極其相似,屏蔽了絕緣層表面不同化學(xué)基團(tuán)和形貌對(duì)載流子遷移影響變量。在絕緣層表面氣相沉積的有機(jī)并五苯半導(dǎo)體分子結(jié)晶晶區(qū)尺寸大小隨著聚合物結(jié)構(gòu)中蒽基含量的增加而不斷變小,達(dá)到了通過(guò)改變聚合物絕緣層結(jié)構(gòu)從而調(diào)控半導(dǎo)體材料結(jié)晶晶區(qū)尺寸大小的目的。
[Abstract]:The organic integration of electronics industry to create a smart world for human beings, it is widely used in flexible display, micro electronics, RFID tags, biological sensors and smart cards and other fields. As one of the important logic devices, organic thin film transistor because of its light weight, mild processing conditions and large area flexible display has attracted widespread attention. After several decades of research efforts, the mobility of organic thin film transistor device has exceeded the level. However, compared to inorganic silicon transistors, organic thin-film transistors still exist threshold voltage is higher than the organic semiconductor crystal is difficult to control and other issues. In order to solve this problem, the development of new insulation materials has become the the emphasis of the research. As an important part of the organic thin film transistor, an insulating layer can effectively reduce the threshold voltage and operation The voltage, and the physical and chemical properties of the different surface will also affect the performance of the device. Therefore, development of the superior performance of the insulation is of great significance to the development of organic thin film transistor layer material. Based on the above ideas, this paper designed and prepared three kinds can be used as organic thin film transistor insulating layer of polymer material, and the its performance is studied. Firstly, we designed and synthesized a new type of silicon nanoparticles and organic polymer blend materials doped organic / inorganic hybrid insulation layer material. The surface modified silica nanoparticles can react with polymer and formation of chemical bond of organic functional groups, the dispersion of nano particles in the polymer after fixed internal solution preparation after the film and nanoparticles aggregation problem. The nanoparticles with methyl acrylate polymer blends obtained solution processable organic / inorganic hybrid The insulation layer materials. The dielectric constant of the material by the amount of silicon nanoparticles to control. Subsequently, methyl acrylate derivatives we designed and synthesized a variety of structures containing biphenyl monomers. The hydroxyethyl methacrylate and glycidyl methacrylate copolymer in polymer materials. The polymer insulation insulation layer layer of material can be prepared by solution processing of film, and by heating the epoxy structure within its structure open-loop form cross-linked network, so that the heat cured material. The final polymer insulating film has good solvent resistance, dielectric constant and thermodynamic performance satisfactory. Finally, in order to the single variable is studied under the condition of the semiconductor layer between the crystal form and area size and properties of organic thin film transistor device pattern, we designed and synthesized a The organic monomer containing anthracene radical polymerization. The structure and 2-hydroxyethyl methacrylate and glycidyl methacrylate copolymer, obtained a series of different content of anthracene based polymer insulation layer material. The polymer insulation materials can be prepared by solution processing of film, and by heating the epoxy structure within the structure of open loop network to achieve the purpose of curing cross-linking. The surface properties and surface morphology of a series of polymer insulating layer thin films are very similar, the shielding surface of the insulation layer of different chemical groups and morphology of the carrier mobility variables. In the surface of an insulating layer of vapor deposition of organic semiconductor molecules and five benzene crystal size with the increase of the size of anthracene content in the polymer structure and become smaller, the layer structure and regulation of semiconductor crystal by changing the polymer insulation at The purpose of the size of the area.

【學(xué)位授予單位】:吉林大學(xué)
【學(xué)位級(jí)別】:博士
【學(xué)位授予年份】:2016
【分類號(hào)】:TN321.5;TQ317

【參考文獻(xiàn)】

相關(guān)碩士學(xué)位論文 前1條

1 宋林;酞菁銅有機(jī)薄膜晶體管器件的研究[D];北京交通大學(xué);2007年

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本文編號(hào):1362756

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