本文關(guān)鍵詞：MOCVD法制備的ZnO納米結(jié)構(gòu)薄膜特性及其發(fā)光器件研究　出處：《吉林大學(xué)》2016年博士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： Zn O 納米結(jié)構(gòu) PL Hall MIS 發(fā)光器件 金屬襯底 MOCVD

【摘要】：本文旨在基于前人的研究之上,繼續(xù)探尋Zn O基發(fā)光器件實(shí)用化的道路�？紤]到Zn O納米結(jié)構(gòu)材料的諸多優(yōu)異性能以及Zn O基材料面臨的p型摻雜困難,我們將探尋方向集中于Zn O納米材料以及單載流子發(fā)光器件之上。本工作中,我們對Zn O納米材料的物性及其金屬-絕緣層-半導(dǎo)體(MIS)發(fā)光器件物理機(jī)制做了細(xì)致的研究工作。擬利用Zn O納米材料豐富的物理特性和多樣化的制備特性,同時(shí)通過深入掌握了解MIS器件物理機(jī)制,達(dá)到增強(qiáng)常規(guī)Zn O基MIS器件的性能或豐富其功能性作用的目的,以期從中摸索出Zn O基器件實(shí)用化的可能途徑。相應(yīng)工作內(nèi)容概括如下:1.采用MOCVD法,在c-Al_2O_3上制備了Zn O納米柱薄膜。該納米柱薄膜為雙層結(jié)構(gòu),在納米柱區(qū)域之下存在一致密薄膜區(qū)域。研究了生長溫度對材料形貌及結(jié)晶質(zhì)量的影響,并從熱力學(xué)及生長動(dòng)力學(xué)角度對實(shí)驗(yàn)現(xiàn)象予以了解釋。通過光致發(fā)光(PL)表征,揭示出納米柱和薄膜層區(qū)域輻射復(fù)合特性的差異,納米柱區(qū)域輻射復(fù)合特性隨生長溫度升高的變化規(guī)律,以及納米柱區(qū)域輻射復(fù)合特性對襯底材料弱的依賴性。對于薄膜區(qū)域的電學(xué)特性,通過Hall測試,揭示出晶界效應(yīng)對電荷輸運(yùn)的限制機(jī)理,以及電學(xué)特性隨生長溫度升高而改善的物理機(jī)制。2.采用MOCVD法,在Al_2O_3和Ga N上制備了納米墻薄膜,表征了兩種襯底上納米墻薄膜在形貌、晶體質(zhì)量上的差異,并從熱力學(xué)角度予以相應(yīng)解釋。PL表征反映出納米墻材料相比于納米柱材料具有更高的熒光量子效率,但是深能級相關(guān)輻射躍遷更為顯著。另外,采用MOCVD法基于Ga N襯底獲得了納米金字塔薄膜。揭示了隨著生長溫度升高,納米柱材料向納米金字塔轉(zhuǎn)變的形貌演變規(guī)律,期間伴隨著材料晶體質(zhì)量的不斷改善。PL表征反映出納米金字塔要比納米墻結(jié)構(gòu)具有更強(qiáng)的激子-聲子耦合作用以及更高的熒光量子效率。3.基于Zn O納米柱材料構(gòu)筑了Au-Mg O-Zn O結(jié)構(gòu)MIS發(fā)光器件。從空穴的產(chǎn)生、載流子的復(fù)合,器件的電荷輸運(yùn),材料中電場分布,以及實(shí)際MIS器件的物理模型等方面,詳細(xì)探討了Mg O層厚度對MIS器件正、反向驅(qū)動(dòng)下性能的影響。另外,針對常規(guī)MIS器件反偏工作下的性能劣勢,設(shè)計(jì)并制備了新型MIPN結(jié)發(fā)光器件,從器件物理角度對器件的預(yù)期性能予以解釋。實(shí)際器件性能與理論預(yù)期相一致。4.基于對Zn O納米柱特性的研究工作,開展MOCVD法于金屬襯底上制備Zn O材料的研究。特別的,探索Zn O材料在不銹鋼襯底上隨溫度變化的制備特性,同時(shí)著重研究所獲得的Zn O材料的光學(xué)特性。另外,基于熒光量子效率及輻射復(fù)合特性最優(yōu)的Zn O納米柱材料,制備了柔性有機(jī)-無機(jī)混合型ITO/PEDOT:PSS/PMMA/Zn O結(jié)構(gòu)MIS發(fā)光器件,實(shí)現(xiàn)了器件電注入下較純凈的近紫外光發(fā)射,并對相應(yīng)器件物理機(jī)制進(jìn)行了探討及分析。
[Abstract]:This paper based on the previous research, to explore the Zn O based light emitting device practical way. Considering the difficulties of Zn P doped O nanomaterials has some excellent performances and Zn O based materials, we will explore the direction to focus on single carrier Zn O nano material and light emitting devices. In this work, we Zn O nano material properties and metal insulator semiconductor (MIS) devices physical mechanism research work has been done in detail. The physical properties of quasi rich Zn O nano materials and diverse preparation by use of the characteristic at the same time through in-depth understand the physical mechanism of MIS devices to enhance the performance of the conventional Zn based O the MIS device or enrich its function role purpose, in order to find out possible ways of Zn O based devices. The corresponding practical work contents are as follows: 1. by the method of MOCVD in c-Al_2O_3 on the preparation of Zn O Nanopillars. The nanopillars is a double-layer structure, under the regional dense thin film nano column area. Effects of growth temperature on the morphology and crystal quality of materials, and explains from the point of view of thermodynamics and growth kinetics of experimental phenomena. By photoluminescence (PL) characterization, reveal the differences of radiation characteristics of composite the cashier m column and thin layer region, regional nano column radiative recombination characteristics changes with the increase of the growth temperature, and regional radiation characteristics of the composite nano column substrate material. The dependence of the weak electrical characteristics for thin film region, through the Hall test, reveals the mechanism of grain boundary effect on charge transport, physical mechanism and the electrical properties improved with the increase of the growth temperature of.2. by MOCVD, Al_2O_3 and Ga in N were prepared on nano wall film, characterization of two kinds of nano film on the substrate wall morphology, crystal Differences in body mass, and from the angle of thermodynamics to explain the corresponding characterization of.PL reflects the wall material in nano column compared to nano material has higher fluorescence quantum efficiency, but the deep level related radiative transition is more significant. In addition, using the method of MOCVD Ga based on N substrate obtained nano thin film. Pyramid reveals that with the growth temperature rise, evolution of nano materials to the nano morphology change column in Pyramid, accompanied by the continuous improvement of the quality of.PL crystal material characterization reflects Pyramid than nano nano wall structure has stronger exciton phonon coupling and higher fluorescence quantum efficiency of.3. Zn O nano materials based on the Au-Mg O-Zn column to build the O structure of MIS light from the device. Cavitation, recombination, charge transport devices, the electric field distribution in the material, and the actual MIS device physical model, discussed in detail The Mg thickness of O layer on the MIS device, reverse driving under the influence of the performance. In addition, the performance of conventional MIS devices for inferior work under reverse bias, the design and preparation of novel MIPN junction light emitting device, is expected to be explained on the performance of the device from the device to the point of view of physics. Performance and theoretical expectations are consistent on the actual device.4. the work of Zn O nano column based on the characteristics, study on Preparation of Zn O materials to carry out MOCVD to the metal substrate. In particular, to explore the characteristics of Zn O were prepared on stainless steel substrate material changes with temperature, while focusing on the optical properties of Zn O Materials Research Institute obtained. In addition, the Zn O nano material column the fluorescence quantum efficiency and radiation characteristics based on the optimal composite, preparation of flexible organic inorganic hybrid ITO/PEDOT:PSS/PMMA/Zn O structure of MIS light emitting device, realizes electrical injection near ultraviolet light emission is pure, and the corresponding device. The mechanism is discussed and analyzed.

【學(xué)位授予單位】：吉林大學(xué)
【學(xué)位級別】：博士
【學(xué)位授予年份】：2016
【分類號】：TN304.21
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本文編號：1362153