本文關(guān)鍵詞：摻鉺富硅氮氧化硅的敏化發(fā)光研究　出處：《浙江大學(xué)》2015年博士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 硅基光電子 摻鉺富硅氮氧化硅 敏化作用 光致發(fā)光 電致發(fā)光

【摘要】：硅基光電集成可以為微電子器件提供高速、大帶寬、低串?dāng)_的光互連,因此成為目前半導(dǎo)體研究領(lǐng)域的熱點(diǎn)之一。但是,與集成電路工藝相兼容的硅基光源的缺失是制約硅基光電集成發(fā)展的一大難點(diǎn)。鉺離子摻雜的硅基發(fā)光材料是實(shí)現(xiàn)硅基光源的重要途徑之一,它的制備過程與集成電路工藝兼容,其發(fā)光對應(yīng)于光纖通訊的最低損耗波長,因此得到了廣泛的關(guān)注。但是鉺的激發(fā)截面很小,如何實(shí)現(xiàn)其高效發(fā)光是目前研究中亟需解決的問題。本文針對硅基摻鉺富硅氮氧化硅材料,系統(tǒng)研究了其中鉺離子的敏化機(jī)理及影響因素,對其光學(xué)性能進(jìn)行一系列優(yōu)化。并基于光學(xué)性能的研究,成功制備出了電致發(fā)光器件。本文的主要創(chuàng)新結(jié)果如下：(1) 解釋了富硅量對摻鉺富硅氮氧化硅薄膜中鉺發(fā)光的影響,并對其進(jìn)行優(yōu)化。研究發(fā)現(xiàn)當(dāng)富硅量較低時,硅納米晶密度隨富硅量提高而提高；富硅量較高時,硅納米晶之間會相互交疊,其密度隨富硅量提高而降低；同時,提高薄膜富硅量會降低光學(xué)活性鉺離子的濃度。研究還發(fā)現(xiàn)在經(jīng)過高溫?zé)崽幚碇?薄膜內(nèi)的非輻射復(fù)合中心會被有效消除,提升富硅量并不會導(dǎo)致鉺發(fā)光壽命的下降。所以,在中等富硅量樣品中有最優(yōu)的鉺離子發(fā)光。(2) 發(fā)現(xiàn)隨熱處理溫度的不同,在摻鉺富硅氮氧化硅中存在兩種敏化中心。當(dāng)熱處理溫度低于800℃時,薄膜內(nèi)沒有硅納米團(tuán)簇的析出,局域態(tài)是主要的敏化中心；當(dāng)熱處理溫度高于800℃時,局域態(tài)逐漸消亡,硅納米團(tuán)簇開始析出并成為主要敏化中心。研究發(fā)現(xiàn)局域態(tài)敏化鉺離子濃度是硅納米團(tuán)簇的兩倍以上。制約低溫?zé)崽幚順悠分秀s離子發(fā)光的主要因素是較低的熒光壽命。(3) 研究了摻鉺富硅氮氧化硅的變溫光致發(fā)光譜,證明其溫度淬滅效應(yīng)非常微弱。研究發(fā)現(xiàn)薄膜內(nèi)存在鉺離子的非輻射復(fù)合中心,其密度及能級位置隨熱處理?xiàng)l件而改變。同時發(fā)現(xiàn),從局域態(tài)及硅納米晶向鉺離子傳遞能量的過程需要聲子輔助。(4) 成功制備出開啟電壓低于5 V的摻鉺富硅氮氧化硅電致發(fā)光器件。系統(tǒng)研究了器件的電輸運(yùn)機(jī)制,發(fā)現(xiàn)不同的熱處理?xiàng)l件會改變薄膜內(nèi)的缺陷態(tài)密度及能級結(jié)構(gòu)。指出摻鉺富硅氮氧化硅器件中鉺離子的電致發(fā)光并不是由于熱載流子的碰撞離化作用,而應(yīng)該是一個敏化過程,這其中局域態(tài)起到了重要的作用。
[Abstract]:Silicon based optoelectronic integration can provide high speed, O Obihiro, low crosstalk optical interconnection for microelectronic devices, so it has become one of the hot topics in the field of semiconductor research. However, the lack of silicon based light source compatible with integrated circuit technology is a difficult problem that restricts the development of silicon based optoelectronic integration. Erbium doped silicon based luminescent material is one of the important ways to achieve silicon based light source. Its preparation process is compatible with integrated circuit technology, and its luminescence corresponds to the lowest loss wavelength of fiber communication, so it has attracted wide attention. However, the excitation cross section of erbium is very small, and how to realize its high efficiency luminescence is an urgent problem to be solved in the present study. In this paper, the sensitization mechanism and influencing factors of erbium ion in silicon based erbium doped silicon nitride silicon oxide materials were systematically studied, and its optical properties were optimized. Based on the study of optical properties, electroluminescent devices have been successfully fabricated. The main innovations of this paper are as follows: (1) the effect of silicon rich on Erbium emission in erbium rich silicon nitride oxide film is explained and optimized. It is found that when the silicon content is low, the density of silicon nanocrystals increases with the increase of silicon content. When the silicon content is high, the silicon nanocrystals will overlap each other, and the density will decrease with the increase of silicon content. Meanwhile, increasing the silicon content of thin films will reduce the concentration of optical active erbium ions. It is also found that after the high temperature heat treatment, the nonradiative recombination center in the thin film will be effectively eliminated. Ti Shengfu's silicon content will not lead to the decrease of Er lifetime. Therefore, there is the best erbium luminescence in the medium rich silicon. (2) it is found that there are two sensitized centers in erbium rich silicon nitrogen oxide silicon oxide with different heat treatment temperatures. When the heat treatment temperature is less than 800 degrees, there is no precipitation of silicon clusters. The localized state is the main sensitization center. When the heat treatment temperature is higher than 800 degrees, the localized state gradually disappears, and the silicon nanoclusters begin to precipitate and become the main sensitization center. It is found that the local state sensitized erbium ion concentration is more than two times that of the silicon nanocluster. The main factor that restricts the luminescence of erbium ion in the samples of low temperature heat treatment is the lower fluorescence lifetime. (3) the temperature photoluminescence spectra of erbium doped silicon rich nitrogen oxide silicon have been studied, and it is proved that the temperature quenching effect is very weak. It is found that the film is in the non radiation complex center of erbium ion, and its density and energy level change with the heat treatment conditions. It is also found that the transfer of energy from local and silicon nanocrystals to erbium ions requires phonon assistance. (4) erbium - doped silicon - rich silicon oxide electroluminescent devices with an opening voltage of less than 5 V have been successfully prepared. The electrical transport mechanism of the device is studied systematically, and it is found that the different heat treatment conditions will change the defect density and energy level structure in the thin film. It is pointed out that the electroluminescence of erbium ions in erbium doped silicon nitride silicon oxide devices is not due to the ionization ionization effect of hot carriers, but rather a sensitization process, in which the localized state plays an important role.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級別】：博士
【學(xué)位授予年份】：2015
【分類號】：TN383.1

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