本文選題：多電源驅動放電 + 射頻感性耦合等離子體��； 參考：《大連理工大學》2017年博士論文

【摘要】：射頻感性耦合等離子體(Inductively oupled Plasma,ICP)具有工作氣壓低、等離子體密度高、裝置簡單等優(yōu)點,在半導體芯片制造工藝中得到了廣泛的應用。隨著微電子工業(yè)的發(fā)展,芯片制造工藝中的晶圓尺寸越來越大,刻蝕線寬越來越窄,這對ICP源提出了更高的要求。為滿足這些要求,人們提出了由多個電源驅動放電的ICP源,如脈沖偏壓的射頻ICP源以及雙頻雙線圈的射頻ICP源等。相比于傳統(tǒng)的ICP源,這些多電源驅動的ICP源的放電機制較為復雜。因此,研究電源參數(shù)對等離子體特性的影響,對優(yōu)化和控制等離子體工藝具有重要意義。在本文中,針對平面線圈型ICP源裝置,采用二維流體力學模型系統(tǒng)的研究了外界電源參數(shù)對等離子體特性的影響,尤其對等離子體均勻性的影響。在論文第一章中,首先概述了等離子體的分類及低溫等離子體的應用,綜述了幾種典型的射頻等離子體源及其放電特點,尤其是系統(tǒng)地闡述了外界參數(shù)對ICP均勻性影響的研究進展。最后給出了本文的內(nèi)容和安排。在第二章中,詳細介紹了二維流體力學模型。該模型由流體力學模塊和電磁場模塊耦合而成。流體力學模塊通過求解流體力學方程得到等離子體各宏觀物理量,如粒子密度、粒子通量和電子溫度等;電磁場模塊通過求解麥克斯韋方程組來計算線圈在放電腔室內(nèi)產(chǎn)生的電磁場的時空分布。此外,本章介紹了所涉及到的邊界條件及模擬中使用的數(shù)值方法。在第三章中,研究了脈沖直流偏壓對射頻N2等離子體特性的影響。結果表明:離子密度、感性沉積功率密度及極板表面脈沖周期平均的總離子通量均隨偏壓幅值的增大而增加;當偏壓頻率較大時,脈沖開啟時間較短,等離子體無法達到穩(wěn)定狀態(tài);當偏壓頻率較小,脈沖開啟時間足夠使等離子體達到穩(wěn)定狀態(tài),此時,總離子通量不再受脈沖頻率影響。另外,在研究的所有偏壓幅值和頻率下,當脈沖關閉,極板表面的離子密度先上升,后下降。在第四章中,模擬了雙線圈驅動的ICP放電行為,其中工作氣體為Ar。結果表明:當內(nèi)線圈電流一定,減小內(nèi)線圈的頻率時,內(nèi)線圈附近的角向電場變?nèi)?而外線圈附近的角向電場基本不變;此外,內(nèi)線圈附近的角向電場隨內(nèi)線圈電流的增大而增加。當內(nèi)外線圈對放電所起的作用相當時,均可以得到均勻性較好的等離子體。在第五章中,考察了外線圈電流及內(nèi)線圈的脈沖占空比對Ar/02等離子體均勻性的影響。結果表明,增大外線圈電流時,極板表面脈沖周期平均的正離子通量和O原子密度的徑向均勻性變好。在占空比為50%時,極板表面脈沖周期平均的正離子通量的均勻性最好;極板表面脈沖周期平均的O原子密度的徑向均勻性隨占空比的增加而變差。在第六章,對本文的工作進行了小結,并對進一步開展的模擬研究提出了展望。
[Abstract]:Inductively oupled Plasma (ICP) has the advantages of low working pressure, high plasma density, simple device and so on. It has been widely used in the manufacturing process of semiconductor chip. With the development of microelectronics industry, the size of the wafer in the chip manufacturing process is increasing and the etching line width is narrower and narrower, this is the ICP In order to meet these requirements, to meet these requirements, people have proposed ICP sources, such as pulse bias voltage ICP source and dual frequency dual loop radio frequency ICP source, such as pulse bias voltage source, and so on. Compared to traditional ICP sources, the discharge mechanism of these multi power source ICP sources is more complex. The effect of sex is of great significance to the optimization and control of plasma processes. In this paper, the influence of the external power parameters on the plasma characteristics, especially the plasma uniformity, is studied in the two-dimensional fluid mechanics model system for the planar coil type ICP source. In the first chapter, the plasma plasma is summarized. The classification of body and the application of low temperature plasma are introduced, and several typical RF plasma sources and their discharge characteristics are reviewed. In particular, the research progress on the influence of external parameters on ICP uniformity is systematically expounded. Finally, the contents and arrangements of this paper are given. In the second chapter, the two-dimensional hydrodynamics model is introduced in detail. The mechanical module is coupled with the electromagnetic field module. By solving the fluid mechanics equation, the fluid mechanics module obtains the macroscopic physical quantities of the plasma, such as particle density, particle flux and electron temperature. The electromagnetic field module calculates the space-time distribution of the electromagnetic field produced by the coil in the discharge chamber by solving the Maxwell equation. In this chapter, the boundary conditions involved and the numerical methods used in the simulation are introduced. In the third chapter, the effect of pulsed DC bias on the characteristics of the RF N2 plasma is studied. The results show that the ion density, the perceptual deposition power density and the average total ion flux of the pulse cycle average of the plate surface increase with the increase of the amplitude of the bias voltage. When the bias frequency is large, the pulse opening time is shorter and the plasma can not reach the stable state. When the bias frequency is small, the pulse opening time is sufficient to make the plasma stable. At this time, the total ion flux is no longer affected by the pulse frequency. In addition, when the pulse is closed, the surface of the plate is off at all the bias amplitude and frequency studied. The sub density first rises and then drops. In the fourth chapter, the ICP discharge behavior driven by a double loop is simulated, in which the working gas is Ar. shows that when the current of the inner coil is certain and the frequency of the inner coil is reduced, the angle to the electric field near the inner coil is weakened, and the angle of the angle near the outer coil is basically unchanged; in addition, the angular direction of the electric field near the inner coil is to the electric field. With the increase of the current of the inner coil, a better uniformity of plasma can be obtained when the internal and external coils play an equal role in the discharge. In the fifth chapter, the influence of the outer loop current and the pulse duty ratio of the inner coil on the uniformity of the Ar/02 plasma is investigated. The results show that the surface pulse of the plate surface increases when the outer loop current is increased. The periodic average positive ion flux and the radial uniformity of the O atomic density become better. When the duty ratio is 50%, the uniformity of the positive ion flux on the average pulse cycle of the plate surface is the best, and the radial uniformity of the average O atomic density of the pulse cycle on the plate surface becomes worse with the increase of the duty ratio. In the sixth chapter, the work of this paper is small. Finally, the prospect of further simulation research is put forward.
【學位授予單位】：大連理工大學
【學位級別】：博士
【學位授予年份】：2017
【分類號】：O53

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