本文選題：高能電子 + 深層充放電��； 參考：《中國科學(xué)院大學(xué)(中國科學(xué)院國家空間科學(xué)中心)》2017年博士論文

【摘要】：空間高能電子導(dǎo)致的深層充放電效應(yīng)一直是運行于地球外輻射區(qū)域的航天器所面臨的最大空間環(huán)境危害之一。目前,受限于多方面因素,深層充放電效應(yīng)的現(xiàn)有研究積累仍不能很好地滿足實際工程需求,在航天器發(fā)射入軌前對其深層充放電風(fēng)險進(jìn)行準(zhǔn)確評估仍舊存在較大困難。隨著航天任務(wù)對高可靠、長壽命要求的不斷增強(qiáng)以及新材料、新器件在航天器上的應(yīng)用,從工程需求出發(fā)持續(xù)深入開展深層充放電效應(yīng)研究對保障我國航天器在軌可靠性具有十分重要的意義。本論文利用中科院空間中心自主研發(fā)的航天器充放電效應(yīng)模擬裝置以及充電效應(yīng)仿真軟件,通過綜合運用地面模擬試驗、一維和三維仿真計算并結(jié)合理論分析等手段,針對具有代表性的航天器部件構(gòu)型,開展了空間連續(xù)能譜高能電子輻照下典型結(jié)構(gòu)的深層充放電特性、影響不同結(jié)構(gòu)深層充放電特性的關(guān)鍵內(nèi)在因素和外部環(huán)境條件、典型結(jié)構(gòu)深層放電脈沖的基本特征以及深層放電脈沖對典型航天器件的影響規(guī)律等基礎(chǔ)問題的研究,主要的研究內(nèi)容和研究成果如下:1)開展了典型結(jié)構(gòu)的深層充放電特性研究。主要針對平板型介質(zhì)以及介質(zhì)-導(dǎo)體相鄰結(jié)構(gòu),研究了影響其深層充放電效應(yīng)的各主要內(nèi)在因素。對于平板介質(zhì),材料電導(dǎo)率、厚度以及接地方式是最主要的內(nèi)在影響因素,為有效減緩平板介質(zhì)的深層充電效應(yīng),應(yīng)盡量選用電導(dǎo)率高的材料,減小介質(zhì)的厚度,并在條件允許下采用雙面接地。對于介質(zhì)-導(dǎo)體相鄰結(jié)構(gòu),介質(zhì)最高表面電位以及內(nèi)部最大電場均與介質(zhì)寬度和高度呈正相關(guān)。當(dāng)介質(zhì)與導(dǎo)體側(cè)面存在微小間隙時,介質(zhì)內(nèi)最大電場顯著增強(qiáng),極易發(fā)生內(nèi)部擊穿,而間隙區(qū)域的電場也很容易超過擊穿閾值,從而使介質(zhì)-導(dǎo)體間發(fā)生放電。2)開展了影響深層充放電效應(yīng)的外部環(huán)境條件研究。以典型的平板介質(zhì)為對象,研究了電子輻照累積時間、電子通量、溫度、真空度以及軌道變化等環(huán)境條件對深層充放電效應(yīng)的影響。高能電子持續(xù)數(shù)天的累積輻照會降低介質(zhì)自發(fā)放電的閾值條件,輻照后期放電更加頻繁且放電強(qiáng)度減弱。輻照電子通量越高時,放電風(fēng)險越大、頻率越高。溫度降低時介質(zhì)本征電導(dǎo)率減小,充電電位和放電風(fēng)險隨之增加。介質(zhì)在高真空度下更容易被充上高電位,當(dāng)受到某種瞬態(tài)氣體釋放的影響時很容易誘發(fā)介質(zhì)表面放電。當(dāng)介質(zhì)遭受周期性改變的高能電子環(huán)境時,其充電狀態(tài)的變化往往滯后于電子通量的變化。3)開展了深層放電脈沖特征研究。對深層充放電試驗中的大量放電數(shù)據(jù)進(jìn)行統(tǒng)計分析,結(jié)果表明,深層放電脈沖幅度整體上隨著放電時間間隔的增加而增大,放電間隔越長,發(fā)生高強(qiáng)度放電事件的概率越大。高通量電子輻照時,或者介質(zhì)處于低溫時,介質(zhì)發(fā)生深層放電的風(fēng)險更高,且放電電流的平均幅度更大,離散性更強(qiáng)。深層放電電流脈沖信號在時域上常常為欠阻尼高頻振蕩信號,而在頻域上存在明顯的特征峰,其振蕩特性主要與放電回路的阻抗特性有關(guān),樣品厚度、溫度以及輻照源對放電電流脈沖的頻譜分布影響不大,只是低頻部分稍有差別。4)開展了深層放電脈沖對典型星用器件的干擾影響研究。選取一款航天常用的集成運放為研究對象,對其進(jìn)行了放電干擾模擬試驗。結(jié)果表明,在模擬的空間靜電放電干擾下,運放輸出管腳會產(chǎn)生異常瞬態(tài)脈沖,脈沖特征受器件工作模式、偏置條件、放電電壓及干擾耦合途徑的影響。電壓比較器只出現(xiàn)單一極性的輸出瞬態(tài)脈沖,電壓跟隨器與同相放大器對放電的響應(yīng)類似,而反相放大器對放電的敏感度相對較低。器件輸入端耦合進(jìn)的超過運放帶寬的高頻干擾信號是放電導(dǎo)致運放異常瞬態(tài)脈沖輸出的根本原因,輸出脈沖幅度、持續(xù)時間與輸入端干擾信號幅度及頻率呈現(xiàn)正相關(guān)性。
[Abstract]:The deep charge discharge effect caused by space high energy electrons has always been one of the largest space environmental hazards facing the spacecraft operating in the outer earth radiation area. At present, the existing research on the deep charge and discharge effect is still unable to meet the actual requirement of the practical process limited by many factors. There are still great difficulties in accurate assessment of charge and discharge risk. With the high reliability of the space mission, the continuous enhancement of the long life requirements and the application of new materials, new devices on the spacecraft, it is very important to study the deep deep charge and discharge effects from the needs of the engineering to ensure the reliability of our spacecraft on orbit. In this paper, the space center of the CAS Space Center is used to simulate the spacecraft charging and discharging effect simulation device and the charging effect simulation software. By using the ground simulation test, one and three dimensional simulation calculation and the theoretical analysis, the space continuous energy spectrum high-energy electricity is carried out for the representative spaceflight components. The characteristics of the deep charge and discharge of typical structures under the irradiation of sub radiation, the key internal factors and external environment conditions affecting the deep charge and discharge characteristics of different structures, the basic characteristics of the deep discharge pulse in the typical structure and the influence of the deep discharge pulse on the typical space devices, and the main research content and research results As follows: 1) the study of the deep charge and discharge characteristics of the typical structure is carried out. The main internal factors affecting the deep charge and discharge effects are studied mainly for plate and dielectric conductor adjacent structures, which are the most important internal factors for the plate medium, material conductivity, thickness and grounding mode, in order to effectively slow down the plate. The deep charge effect of medium should be used as far as possible to select material with high conductivity, reduce the thickness of the medium, and adopt double side grounding under the condition of condition. For the adjacent structure of medium conductor, the maximum surface potential and the maximum electric field of the medium are positively related to the width and height of the medium. When there is a small gap between the medium and the side of the conductor, the medium has a small gap. The internal maximum electric field is greatly enhanced, and the internal breakdown is very easy to occur, and the electric field in the gap region is easily exceeded by the breakdown threshold, thus the discharge.2 between the medium conductors is produced. The external environment conditions that affect the deep charge and discharge effect are studied. The effect of environmental conditions, such as vacuum and orbital change, on the deep charge and discharge effect. The cumulative irradiation of high-energy electrons will reduce the threshold conditions of spontaneous discharge of the medium, the discharge more frequent and the discharge intensity in the later period of irradiation. The higher the radiation flux, the greater the risk of discharge, the higher the frequency, the intrinsic characteristic of the dielectric. The electric conductivity decreases and the charge potential and the discharge risk increase. The medium is more likely to be filled with high potential at high vacuum. When affected by some transient gas release, the dielectric surface discharge is easily induced. When the medium suffers from periodic change of the high energy electronic environment, the change of the charge state of the medium is often lagged behind the change of the electron flux. The characteristics of deep discharge pulse are studied. A large number of discharge data in the deep charge discharge test are statistically analyzed. The results show that the depth of the deep discharge pulse increases with the increase of the discharge time interval, the longer the discharge interval is, the greater the probability of high intensity discharge event is. High flux electron irradiation, or.3 When the mass is at low temperature, the risk of deep discharge in the medium is higher, and the average amplitude of discharge current is greater and the dispersion is stronger. The deep discharge current pulse signal is often under the damping high frequency oscillating signal in the time domain, and there is a distinct characteristic peak in the frequency domain. The oscillation specificity is mainly related to the impedance characteristics of the discharge circuit, and the sample thickness is thick. Degree, temperature and irradiation source have little influence on the spectrum distribution of discharge current pulse, only the low frequency part has a slight difference of.4). The influence of deep discharge pulse on the interference of typical satellite devices is carried out. Under the interference of space electrostatic discharge, an abnormal transient pulse will be produced by the amp output pin. The characteristics of the pulse are influenced by the device working mode, the bias condition, the discharge voltage and the interference coupling approach. The voltage comparator only has a single polarity output transient pulse, and the response of the voltage follower and the same phase amplifier to the discharge is similar, but the reverse phase amplifier is similar. The sensitivity of the discharge is relatively low. The high frequency interference signal, which is coupled by the input end of the device, is the fundamental reason for the abnormal transient pulse output caused by the discharge. The amplitude and duration of the output pulse are positively correlated with the amplitude and frequency of the input interference signal.

【學(xué)位授予單位】：中國科學(xué)院大學(xué)(中國科學(xué)院國家空間科學(xué)中心)
【學(xué)位級別】：博士
【學(xué)位授予年份】：2017
【分類號】：V416.5;V520

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