【摘要】：硅鍺薄膜材料具有吸收系數(shù)高、帶隙窄(1.1~0.66eV)的優(yōu)點(diǎn)，可大幅提高太陽(yáng)光的吸收效率并拓寬光譜響應(yīng)范圍，從而提高太陽(yáng)電池的轉(zhuǎn)換效率。硅鍺合金薄膜材料可用于疊層電池中，且疊層電池具有結(jié)構(gòu)好，能提高光電轉(zhuǎn)換效率、降低光致衰退和提高光譜響應(yīng)范圍等優(yōu)點(diǎn)，因此，激起了國(guó)內(nèi)外對(duì)硅鍺合金薄膜電池極大的研究熱情。 本文采用射頻等離子化學(xué)氣相沉積（RF-PECVD）技術(shù)制備了硅鍺薄膜。系統(tǒng)研究了氫稀釋率、鍺烷濃度以及薄膜中鍺含量、反應(yīng)氣壓、輝光功率、電極間距和襯底溫度等對(duì)硅鍺薄膜光電特性和結(jié)構(gòu)特性的影響。結(jié)果表明：在實(shí)驗(yàn)研究的范圍內(nèi)，材料的暗電導(dǎo)率隨著沉積溫度的升高、鍺烷濃度的增加、沉積壓強(qiáng)的降低、氫稀釋率的降低而增加；材料的光敏性隨襯底溫度的升高、輝光功率的增加、沉積壓強(qiáng)的增加、鍺烷濃度的降低、氫稀釋率的降低而增加。通過(guò)實(shí)驗(yàn)研究，在襯底溫度為175℃，鍺烷濃度為5%，氫稀釋率為24，總氣體流量約為200sccm，沉積壓強(qiáng)為3Torr，輝光功率為90W的時(shí)候，獲得了光敏性達(dá)5×105的非晶硅鍺薄膜材料，其生長(zhǎng)速度為0.08nm/s；在襯底溫度為175℃，鍺烷濃度為1.4%，氫稀釋率為82，，總氣體流量約為400sccm，沉積壓強(qiáng)為3Torr，輝光功率為60W的時(shí)候，獲得了適合做太陽(yáng)電池有源層的微晶硅鍺薄膜材料，經(jīng)過(guò)Raman三峰擬合其晶化率為41%，其光敏性達(dá)2×104，其生長(zhǎng)速度為0.04nm/s。 將上述優(yōu)化的非晶硅鍺材料應(yīng)用于太陽(yáng)電池的本征吸收層，制備了一系列非晶硅鍺太陽(yáng)電池，電池采用的結(jié)構(gòu)為：glass/SnO2/p-ａ-Si:H /i-ａ-SiGe:H /n-nc Si:H /Al，研究了非晶硅鍺材料的光電特性、結(jié)構(gòu)特性對(duì)太陽(yáng)電池性能的影響，獲得了轉(zhuǎn)換效率η=4.29%的ａ SiGe薄膜太陽(yáng)電池，通過(guò)優(yōu)化p/i界面的buffer層結(jié)構(gòu)，適當(dāng)延遲鍺烷氣體的開(kāi)啟時(shí)間，使得電池的填充因子FF從46%上升到了53%，最終獲得了轉(zhuǎn)換效率為4.99%的ａ SiGe薄膜電池。
[Abstract]:The silicon-germanium thin film material has the advantages of high absorption coefficient and narrow band gap (1.1~0.66eV), which can greatly improve the absorption efficiency of solar light and broaden the spectral response range, so as to improve the conversion efficiency of solar cells. The silicon-germanium alloy thin film material can be used in laminated battery, and the laminated cell has good structure, can improve the photoelectric conversion efficiency, reduce the photodegradation and increase the spectral response range and so on. The research enthusiasm of silicon-germanium alloy thin-film battery at home and abroad has been aroused. Silicon-germanium thin films were prepared by radio-frequency plasma chemical vapor deposition (RF-PECVD). The effects of hydrogen dilution ratio, germanium concentration, germanium content, reaction pressure, glow power, electrode spacing and substrate temperature on the photoelectric and structural properties of silicon-germanium thin films were systematically studied. The results show that the dark conductivity of the materials increases with the increase of deposition temperature, the concentration of germanium, the decrease of deposition pressure and the reduction of hydrogen dilution rate. The photosensitivity of the materials increases with the increase of substrate temperature, glow power, deposition pressure, germanium concentration and hydrogen dilution. When the substrate temperature is 175 鈩

本文編號(hào)：2442594