【摘要】：近年來,液相法制備有機微納陣列場效應(yīng)晶體管(FET)受到人們的廣泛關(guān)注。一方面,液相法具有操作簡單、適合大面積生產(chǎn)等優(yōu)勢;另一方面,有機半導體能溶于有機溶液,還可與柔性襯底結(jié)合,制備柔性器件和電路。另外,有機微納陣列可以與圖案化電極相結(jié)合,在大規(guī)模、高集成度的電路中得到廣泛應(yīng)用。常見的液相法有:滴注法、提拉法和區(qū)域澆鑄法。針對目前這些液相法存在的問題,如:對實驗環(huán)境要求高、很容易有溶劑雜質(zhì)的殘留等,導致有機半導體的結(jié)晶質(zhì)量差,器件遷移率低,我們通過提出新穎的、改善傳統(tǒng)的液相法,有效提高了有機小分子和聚合物半導體的結(jié)晶質(zhì)量,再結(jié)合絕緣層表面修飾,徹底優(yōu)化了FET的性能。1.我們證實了一種毛筆可控法,利用毛的毛細作用,在垂直于毛的方向得到了大面積、高度有序的TCNQ微米線陣列。這種陣列不僅可以生長在傳統(tǒng)的剛性襯底上,由于溶液鋪開面積大、濃度梯度小,還可以生長在非傳統(tǒng)的柔性和曲面襯底上。同一方向的微米線陣列的面積可達1.5×2.0 mm2,成功率為93%�；谶@些微米線陣列,我們制備了剛性和柔性FET,并且通過十八烷基三氯硅烷(OTS)修飾Si/SiO2片,器件的遷移率提高了一個量級。2.我們利用簡單的滴注法,通過選擇合適的溶劑和襯底溫度,得到了大面積、高質(zhì)量的TIPS-pentacene微米帶陣列,這在其他文獻中是很難見到的。通過對SiO2絕緣層進行苯基三氯硅烷(PTS)修飾,器件遷移率提高了一個量級,最高為2.22 cm2/Vs,這是目前利用滴注法得到的TIPS-pentacene晶體FET中性能最高的。3.我們利用簡單的旋涂法,通過調(diào)整溶液的濃度、溶劑類型以及退火條件和絕緣層,得到了高質(zhì)量的PCDTPT聚合物薄膜,器件遷移率最高可達0.824 cm2/Vs,這是目前利用旋涂法得到的PCDTPT FET中性能最高的。
[Abstract]:In recent years, the preparation of organic microarray field-effect transistors (FET) by liquid phase method has attracted much attention. On the one hand, the liquid-phase method has the advantages of simple operation and suitable for large-scale production. On the other hand, organic semiconductors can be dissolved in organic solution and can be combined with flexible substrates to prepare flexible devices and circuits. In addition, organic nanoarrays can be combined with patterned electrodes, and are widely used in large-scale, highly integrated circuits. Common liquid-phase methods are: drip method, Czochralski method and regional casting method. In view of the problems existing in these liquid phase methods, such as the high requirement of experimental environment and the easy existence of residual solvent impurities, the crystallization quality of organic semiconductors is poor and the device mobility is low. The crystallization quality of organic small molecules and polymer semiconductors was improved by improving the traditional liquid phase method, and the properties of FET were optimized by combining with the surface modification of the insulating layer. 1. We have proved that a hairbrush controllable method is used to obtain a large area highly ordered TCNQ micron-line array perpendicular to the hair by the capillary action of the wool. This kind of array can be grown not only on traditional rigid substrates, but also on unconventional flexible and curved substrates due to its large solution spreading area and low concentration gradient. The area of the micrometer wire array in the same direction can reach 1. 5 脳 2. 0 mm2, and the success rate is 93. 3%. Based on these micron line arrays, rigid and flexible FET, were prepared and modified by octadecyl trichlorosilane (OTS). A large area and high quality TIPS-pentacene micron band array is obtained by selecting suitable solvent and substrate temperature by using a simple drip method, which is rarely seen in other literatures. By modifying the SiO2 insulator with phenyl trichlorosilane (PTS), the mobility of the device is increased by one order of magnitude, up to 2.22 cm2/Vs, which is the highest performance of the TIPS-pentacene crystal FET obtained by drip method at present. High quality PCDTPT polymer films were obtained by adjusting solution concentration, solvent type, annealing conditions and insulation layer by simple spin coating method. The maximum device mobility was up to 0.824 cm2/Vs,. This is the highest performance of PCDTPT FET obtained by spin-coating method.
【學位授予單位】：東北師范大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN386

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相關(guān)期刊論文 前2條

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本文編號：2404092