銀銅雙原子金屬輔助化學(xué)腐蝕法制備多晶黑硅太陽電池
發(fā)布時(shí)間：2018-11-16 08:40
【摘要】：當(dāng)今光伏市場,晶硅電池占據(jù)了90%以上的市場份額,而多晶硅太陽電池由于成本較低,切片方式簡單成為了科研工作者以及光伏企業(yè)的研究熱點(diǎn)。但是由于多晶硅片表面較高的反射率造成了大量入射光的損失,即使經(jīng)酸制絨處理后的表面反射率也有24%左右,使得多晶硅太陽電池的效率始終無法得到有效的提升,難以滿足人們的要求。黑硅材料是一種從紫外至近紅外波段均有較低反射率的材料,在太陽電池領(lǐng)域有著非常好的應(yīng)用前景,但現(xiàn)階段對黑硅材料的研究大部分處于實(shí)驗(yàn)室階段,如何將其有效地應(yīng)用到多晶硅太陽電池的制備過程中是本文的主要研究內(nèi)容。本文首先采用AgNO3/Cu(NO3)2/HF/H2O2雙原子體系輔助化學(xué)腐蝕法在常溫下制備出具有優(yōu)異陷光性能的多晶黑硅結(jié)構(gòu),通過添加微量的Ag催化Cu腐蝕能夠在常溫下進(jìn)行,相對于制備黑硅的其他方法,該方法成本低且更具有工業(yè)生產(chǎn)的可行性。研究了不同腐蝕參數(shù)對所制備黑硅材料的形貌及反射率的影響,并探究了Ag/Cu雙原子協(xié)同催化腐蝕的機(jī)理。研究結(jié)果表明,腐蝕液中的HF、H2O2濃度,Ag/Cu元素摩爾濃度比以及腐蝕時(shí)間對所制備的黑硅材料的結(jié)構(gòu)形貌以及反射率有著非常重要的影響,最終在HF濃度為1.8M,H2O2濃度為0.4M,Ag:Cu元素摩爾比為1:5,腐蝕時(shí)間為180s時(shí)制備出了具有最佳陷光性能的制備態(tài)黑硅樣品,400-900nm波長范圍內(nèi)的平均反射率為4.74%。但是一味地追求低反射率卻不能得到高效率的太陽電池,原因在于制備態(tài)黑硅材料表面較多的缺陷態(tài)會嚴(yán)重影響擴(kuò)散形成的p-n結(jié)質(zhì)量以及鈍化性能。因此,本文創(chuàng)新性地添加一道納米重構(gòu)(Nano-structure rebuilding,NSR)工藝對制備態(tài)的黑硅納米結(jié)構(gòu)進(jìn)行擴(kuò)孔處理,可控制備出規(guī)則的倒金字塔陷光結(jié)構(gòu),并采用原子層沉積(Atomic layer deposition,ALD)技術(shù)在制備的硅片表面生長一層Al2O3鈍化層。研究了不同NSR刻蝕參數(shù)對所制備的倒金子塔黑硅樣品的結(jié)構(gòu)形貌,反射率以及少子壽命的影響,并探究了倒金字塔結(jié)構(gòu)的形成機(jī)理。通過實(shí)驗(yàn)研究發(fā)現(xiàn)倒金字塔黑硅樣品的尺寸大小、表面反射率以及少子壽命隨NSR刻蝕的時(shí)間及溫度的升高而增大,硅片表面的結(jié)構(gòu)呈現(xiàn)方孔狀結(jié)構(gòu)向倒金字塔結(jié)構(gòu)轉(zhuǎn)變的趨勢。通過改變NSR刻蝕時(shí)間及溫度,我們制備出了邊長尺寸在100nm至900nm的倒金字塔結(jié)構(gòu);發(fā)現(xiàn)制備態(tài)黑硅納米結(jié)構(gòu)的深度會顯著影響經(jīng)NSR刻蝕后形成倒金字塔結(jié)構(gòu)的最終尺寸大小。通過優(yōu)化參數(shù)并結(jié)合反射率及鈍化性能,600nm尺寸的倒金字塔黑硅樣品表現(xiàn)最佳,鈍化后400-900nm波長范圍內(nèi)平均反射率為8.87%,少子壽命為37.82μs。將上述制備的不同尺寸的倒金字塔結(jié)構(gòu)樣品以及制備態(tài)黑硅樣品進(jìn)行多晶太陽電池的制備,發(fā)現(xiàn)600nm尺寸大小的倒金字塔樣品表現(xiàn)出十分優(yōu)異的電池性能,其短路電流Isc,開路電壓Voc以及填充因子FF分別為8.962A,631mV以及79.95%,最終制備的太陽電池平均效率為18.58%,高出產(chǎn)線普通酸制絨電池0.58%;同時(shí)研究了Ag/Cu雙原子MACE法與NSR技術(shù)對金剛線切割多晶硅片的制絨效果,研究發(fā)現(xiàn)經(jīng)Ag/Cu雙原子MACE法與NSR刻蝕后,金剛線切割多晶硅片表面切割痕幾乎消失不見,同樣采用倒金字塔尺寸為600nm的金剛線切割硅片樣品制備出了性能最佳的太陽電池,其開路電壓Voc為632mV,短路電流Isc為8.980A,填充因子FF為80.18%,平均效率為18.71%,高于同結(jié)構(gòu)的砂漿切割電池,本文所開發(fā)的工藝路線為實(shí)現(xiàn)高效金剛線切割多晶太陽電池的產(chǎn)業(yè)化生產(chǎn)提供了有效的技術(shù)思路。
[Abstract]:In the current photovoltaic market, the crystalline silicon battery occupies more than 90% of the market share, and the polycrystalline silicon solar cell has the advantages of low cost and simple slicing mode, and has become the research hotspot of the scientific research worker and the photovoltaic enterprise. but due to the high reflectivity of the surface of the polysilicon sheet, the loss of a large amount of incident light is caused, and the surface reflectance after the acid-based pile treatment is about 24%, so that the efficiency of the polycrystalline silicon solar cell can not be effectively improved, and the requirement of people is difficult to meet. The black silicon material is a material with lower reflectivity from the ultraviolet to the near infrared band, has a very good application prospect in the field of solar cells, How to apply it to the preparation of the polycrystalline silicon solar cell is the main research content in this paper. In this paper, an AgNO3/ Cu (NO3) 2/ HF/ H2O2 double-atomic system-assisted chemical corrosion method is used to prepare a polycrystalline black silicon structure with excellent light-trapping performance at normal temperature, and the addition of trace Ag-catalyzed Cu corrosion can be carried out at normal temperature, and relative to other methods for preparing black silicon, The method is low in cost and has the feasibility of industrial production. The effect of different corrosion parameters on the morphology and reflectivity of the prepared black silicon material was studied, and the mechanism of the co-catalytic corrosion of Ag/ Cu was investigated. The results show that the concentration of HF, H _ 2O _ 2, the molar concentration of Ag/ Cu, and the corrosion time of the corrosive liquid have a very important influence on the structure and the reflectivity of the prepared black silicon material. The prepared black-silicon sample with optimal light-trapping performance was prepared at the time of the etching time of 180s, and the average reflectance in the range of 400-900nm was 4.74%. but the high efficiency solar cell can not be obtained by blindly pursuing low reflectivity, and the reason is that the defect state of the surface of the prepared black silicon material can seriously affect the p-n junction quality and the passivation performance formed by diffusion. Therefore, a nano-structure reconstruction (NSR) process is added to the preparation state of the black silicon nano-structure to be reamed, the light structure of the inverted pyramid of the prepared rule can be controlled, and the atomic layer deposition is adopted. an al2o3 passivation layer is grown on the surface of the prepared silicon wafer by an ald) technique. The effect of different NSR etching parameters on the structure, reflectivity and sub-life of the black silicon sample of the inverted-gold column prepared is studied, and the formation mechanism of the inverted pyramid structure is also explored. The results show that the size, surface reflectivity and less sub-life of the inverted pyramid black silicon sample increase with the time and temperature of the NSR etching, and the structure of the surface of the silicon chip presents the tendency of the square-hole structure to transition to the inverted pyramid structure. By changing the NSR etching time and temperature, we prepared an inverted pyramid structure with a side length of 100nm to 900nm, and found that the depth of the prepared black silicon nano-structure can significantly affect the final size of the inverted pyramid structure after the NSR etching. by optimizing the parameters and combining the reflectivity and the passivation performance, the inverted pyramid black silicon sample of 600nm size shows the best performance, the average reflectivity in the 400-900nm wavelength range after the passivation is 8.87%, the method for preparing the inverted pyramid structure with the size of 600nm shows that the inverted pyramid sample with the size of 600nm exhibits excellent battery performance and short circuit current isc, The open-circuit voltage Voc and the filling factor FF were 80.962A, 631mV and 79.95%, respectively. The average efficiency of the final solar cell was 18. 58%, and the high yield line was 0.58%. The effect of the Ag/ Cu double-atom MACE method and the NSR technique on the texturing of the diamond wire was also studied. In the study, after the Ag/ Cu double-atom MACE method and the NSR etching, the surface cut mark of the diamond wire-cut polycrystalline silicon wafer is almost disappeared, and the solar cell with the best performance is prepared by the diamond wire-cut silicon wafer sample with the inverted pyramid size of 600nm, the open-circuit voltage Voc of which is 632mV, The short-circuit current Isc is 8.980A, the filling factor FF is 80. 18%, the average efficiency is 18.71%, and the mortar cutting battery with the same structure is higher than that of the same structure.
【學(xué)位授予單位】：南京航空航天大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TM914.4
本文編號：2335042
[Abstract]:In the current photovoltaic market, the crystalline silicon battery occupies more than 90% of the market share, and the polycrystalline silicon solar cell has the advantages of low cost and simple slicing mode, and has become the research hotspot of the scientific research worker and the photovoltaic enterprise. but due to the high reflectivity of the surface of the polysilicon sheet, the loss of a large amount of incident light is caused, and the surface reflectance after the acid-based pile treatment is about 24%, so that the efficiency of the polycrystalline silicon solar cell can not be effectively improved, and the requirement of people is difficult to meet. The black silicon material is a material with lower reflectivity from the ultraviolet to the near infrared band, has a very good application prospect in the field of solar cells, How to apply it to the preparation of the polycrystalline silicon solar cell is the main research content in this paper. In this paper, an AgNO3/ Cu (NO3) 2/ HF/ H2O2 double-atomic system-assisted chemical corrosion method is used to prepare a polycrystalline black silicon structure with excellent light-trapping performance at normal temperature, and the addition of trace Ag-catalyzed Cu corrosion can be carried out at normal temperature, and relative to other methods for preparing black silicon, The method is low in cost and has the feasibility of industrial production. The effect of different corrosion parameters on the morphology and reflectivity of the prepared black silicon material was studied, and the mechanism of the co-catalytic corrosion of Ag/ Cu was investigated. The results show that the concentration of HF, H _ 2O _ 2, the molar concentration of Ag/ Cu, and the corrosion time of the corrosive liquid have a very important influence on the structure and the reflectivity of the prepared black silicon material. The prepared black-silicon sample with optimal light-trapping performance was prepared at the time of the etching time of 180s, and the average reflectance in the range of 400-900nm was 4.74%. but the high efficiency solar cell can not be obtained by blindly pursuing low reflectivity, and the reason is that the defect state of the surface of the prepared black silicon material can seriously affect the p-n junction quality and the passivation performance formed by diffusion. Therefore, a nano-structure reconstruction (NSR) process is added to the preparation state of the black silicon nano-structure to be reamed, the light structure of the inverted pyramid of the prepared rule can be controlled, and the atomic layer deposition is adopted. an al2o3 passivation layer is grown on the surface of the prepared silicon wafer by an ald) technique. The effect of different NSR etching parameters on the structure, reflectivity and sub-life of the black silicon sample of the inverted-gold column prepared is studied, and the formation mechanism of the inverted pyramid structure is also explored. The results show that the size, surface reflectivity and less sub-life of the inverted pyramid black silicon sample increase with the time and temperature of the NSR etching, and the structure of the surface of the silicon chip presents the tendency of the square-hole structure to transition to the inverted pyramid structure. By changing the NSR etching time and temperature, we prepared an inverted pyramid structure with a side length of 100nm to 900nm, and found that the depth of the prepared black silicon nano-structure can significantly affect the final size of the inverted pyramid structure after the NSR etching. by optimizing the parameters and combining the reflectivity and the passivation performance, the inverted pyramid black silicon sample of 600nm size shows the best performance, the average reflectivity in the 400-900nm wavelength range after the passivation is 8.87%, the method for preparing the inverted pyramid structure with the size of 600nm shows that the inverted pyramid sample with the size of 600nm exhibits excellent battery performance and short circuit current isc, The open-circuit voltage Voc and the filling factor FF were 80.962A, 631mV and 79.95%, respectively. The average efficiency of the final solar cell was 18. 58%, and the high yield line was 0.58%. The effect of the Ag/ Cu double-atom MACE method and the NSR technique on the texturing of the diamond wire was also studied. In the study, after the Ag/ Cu double-atom MACE method and the NSR etching, the surface cut mark of the diamond wire-cut polycrystalline silicon wafer is almost disappeared, and the solar cell with the best performance is prepared by the diamond wire-cut silicon wafer sample with the inverted pyramid size of 600nm, the open-circuit voltage Voc of which is 632mV, The short-circuit current Isc is 8.980A, the filling factor FF is 80. 18%, the average efficiency is 18.71%, and the mortar cutting battery with the same structure is higher than that of the same structure.
【學(xué)位授予單位】：南京航空航天大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TM914.4
【參考文獻(xiàn)】
相關(guān)期刊論文 前10條
1 虞棟;王申;酈莉;王偉;吳仕梁;吳小山;張鳳鳴;;銅輔助單步化學(xué)刻蝕多晶硅(英文)[J];微納電子技術(shù);2014年04期
2 韓長安;鄒帥;李建江;曹芳;王栩生;章靈軍;蘇曉東;;高效多晶黑硅電池的產(chǎn)線技術(shù)[J];太陽能學(xué)報(bào);2013年12期
3 楊業(yè)元;;硅晶片金剛石線切割的表面特征及其力學(xué)性能[J];中國表面工程;2013年02期
4 王威;沈鴻烈;呂紅杰;岳之浩;;多孔復(fù)合微結(jié)構(gòu)的制備與減反射性能[J];南京航空航天大學(xué)學(xué)報(bào);2013年01期
5 高華;楊樂;張聞斌;李杏兵;;晶體硅太陽電池?zé)Y(jié)工藝優(yōu)化[J];光電技術(shù)應(yīng)用;2012年05期
6 蔣曄;沈鴻烈;岳之浩;王威;呂紅杰;;黑硅與黑硅太陽電池的研究進(jìn)展[J];人工晶體學(xué)報(bào);2012年S1期
7 劉志平;趙謖玲;徐征;劉金虎;李棟才;;PECVD沉積氮化硅膜的工藝研究[J];太陽能學(xué)報(bào);2011年01期
8 孫國輝;晏石林;陳剛;;太陽電池電極與鋁背場燒結(jié)過程的數(shù)值模擬分析[J];系統(tǒng)仿真學(xué)報(bào);2008年22期
9 郭志球,胡蕓菲,沈輝,劉正義;晶體硅太陽電池制備工藝進(jìn)展[J];能源工程;2005年03期
10 王曉泉,汪雷,席珍強(qiáng),徐進(jìn),崔燦,楊德仁;PECVD淀積氮化硅薄膜性質(zhì)研究[J];太陽能學(xué)報(bào);2004年03期
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