【摘要】：ZnO是一種具有光電、氣敏、壓電等特性優(yōu)良的多功能材料,它在室溫下具有較高的禁帶寬度和激子束縛能,在可見光范圍內(nèi)具有很好的透光性,在透明電極、發(fā)光器件、太陽能電池、氣敏傳感器等方面具有潛在的應(yīng)用價值。多年來一直受到物理、化學(xué)、材料、電子等領(lǐng)域的格外關(guān)注。 本文采用溶膠凝膠法在Si、ITO和普通玻璃襯底上,制備了未摻雜ZnO薄膜,Cu、 Li、Ag單摻雜ZnO薄膜及Cu與Li和Ag與Li共摻雜ZnO薄膜。通過X射線衍射儀、掃描電子顯微鏡、透射電子顯微鏡、紫外可見光分光光度計、電化學(xué)工作站等分析儀器,研究了溶膠濃度、摻雜量、退火溫度等對ZnO和摻雜ZnO薄膜結(jié)晶質(zhì)量、表面形貌、光透過性、導(dǎo)電性等方面的影響。論文主要內(nèi)容如下： 首先,我們研究了未摻雜鋅溶膠濃度對ZnO薄膜結(jié)構(gòu)、形貌和光電特性的影響,結(jié)果表明當(dāng)溶膠濃度為0.8mol/L時,未摻雜ZnO薄膜獲得了較好的光電性能。在此基礎(chǔ)上,我們分別制備了不同摻雜濃度的Cu、Li、Ag單摻雜ZnO薄膜,并研究了摻雜量、退火溫度等參數(shù)對ZnO薄膜光電性能的影響,結(jié)果表明經(jīng)550℃大氣退火2h, Cu、 Li、Ag的摻雜量分別為0.001at%,3at%,7at%時,單摻雜ZnO薄膜獲得了較好的光電性能,與未摻雜ZnO薄膜相比,其導(dǎo)電性分別提高了約40倍、200倍和250倍,在可見光范圍內(nèi)其透光率分別達(dá)80%,95%,90%以上。 其次,在綜合性能較好的單摻雜ZnO薄膜基礎(chǔ)上,我們分別制備Cu與Li共摻雜和Ag與Li共摻雜ZnO薄膜,研究了Cu與Li和Ag與Li不同摩爾比摻雜量對共摻雜ZnO薄膜綜合特性的影響。結(jié)果表明經(jīng)550℃大氣退火2h,Cu與Li、Ag與Li、Li與Ag摩爾比均為1：20時,共摻雜ZnO薄膜獲得較好的光電性能,與未摻雜ZnO薄膜相比,其導(dǎo)電性分別提高了6倍、150倍、300倍,在可見光范圍內(nèi)其透光率分別達(dá)85%,95%,90%以上。此外,本文還研究了不同摻雜源、不同基片及薄膜厚度等因素對薄膜結(jié)構(gòu)、形貌及光電特性的影響,并對相應(yīng)單摻雜、共摻雜ZnO納米顆粒進(jìn)行了研究。
[Abstract]:ZnO is a kind of multifunctional material with excellent photoelectric, gas sensitive, piezoelectric and other properties. It has high band gap and exciton binding energy at room temperature, good transmittance in visible light range, transparent electrode, luminescent device, etc. Solar cells, gas sensors and so on have potential application value. For many years, it has been paid special attention in physics, chemistry, materials, electronics and so on. In this paper, undoped ZnO films, Cu, Li,Ag mono-doped ZnO thin films, Cu and Li and Ag and Li co-doped ZnO films were prepared on Si,ITO and ordinary glass substrates by sol-gel method. By means of X-ray diffractometer, scanning electron microscope, transmission electron microscope, UV-Vis spectrophotometer and electrochemical workstation, the sol concentration and doping amount were studied. The effects of annealing temperature on the crystalline quality, surface morphology, optical transmittance and conductivity of ZnO and doped ZnO thin films were investigated. The main contents of the thesis are as follows: firstly, we study the effect of undoped zinc sol concentration on the structure, morphology and optoelectronic properties of ZnO films. The results show that when the sol concentration is 0.8mol/L, The undoped ZnO thin films have good optoelectronic properties. On this basis, we have prepared Cu,Li,Ag mono-doped ZnO thin films with different doping concentrations, and studied the effects of doping amount and annealing temperature on the photoelectric properties of ZnO films. The results show that the Cu, Li, films are annealed at 550 鈩，

本文編號：2312398