溶膠—凝膠法制備二氧化錫納米復(fù)合薄膜及其電學(xué)特性研究
發(fā)布時(shí)間:2018-09-07 17:50
【摘要】:本文首先對金屬氧化物半導(dǎo)體薄膜在氣敏傳感器上的應(yīng)用進(jìn)行了綜述,發(fā)現(xiàn)在眾多的金屬氧化物半導(dǎo)體材料中,由于二氧化錫(SnO2)具有良好的電學(xué)、光學(xué)和氣敏性能,故廣泛應(yīng)用于氣敏傳感器、太陽能電池、發(fā)光材料等領(lǐng)域。在綜述的基礎(chǔ)上,本文確定了用溶膠-凝膠法制備Sn02納米復(fù)合薄膜。 在實(shí)驗(yàn)方面,以金屬無機(jī)鹽SnCl2·2H2O、CuCl2·2H2O和CH3CH2OH為原料,制備了SnO2薄膜和CuO摻雜的SnO2(CuO-SnO2)薄膜,用X射線衍射儀(XRD)、掃描電子顯微鏡(SEM)、透射電子顯微鏡(TEM)和電化學(xué)工作站,系統(tǒng)的研究了退火溫度、旋涂次數(shù)和添加聚乙二醇PEG(1000)對SnO2納米復(fù)合薄膜的物相、微觀結(jié)構(gòu)和電學(xué)特性的影響。研究結(jié)果表明:CuO-SnO2薄膜熱處理溫度在450℃C-550℃之間比較合適,隨著退火溫度的增加,SnO2薄膜結(jié)晶性逐漸變好,晶粒長大,電學(xué)特性比較好,且摻雜CuO后的SnO2薄膜電阻均小于同等條件下未摻雜的Sn02薄膜,制備的Sn02呈四方相金紅石結(jié)構(gòu)。綜合考慮薄膜的微觀結(jié)構(gòu)、電學(xué)特性等因素,我們確定了最佳的退火溫度為450℃,此后系統(tǒng)的研究了退火溫度在450℃下,CuO-SnO2薄膜不同旋涂層數(shù)的電學(xué)特性及添加不同含量聚乙二醇PEG(1000)后CuO-SnO2薄膜的電學(xué)特性。同時(shí),對添加不同重量的聚乙二醇和丙三醇的CuO-SnO2薄膜進(jìn)行了XRD,SEM、TEM分析及電學(xué)特性測試。 在理論模擬方面,結(jié)合氣體動力學(xué)和氣體吸附理論等相關(guān)理論知識,建立了金屬氧化物半導(dǎo)體薄膜氣敏傳感器的靈敏度的模型,在此基礎(chǔ)上將該模型進(jìn)一步擴(kuò)展,得出了其響應(yīng)時(shí)間的表達(dá)式,討論了表達(dá)式中各參數(shù)的變化與薄膜氣敏傳感器靈敏度和響應(yīng)時(shí)間的關(guān)系。 總之,本論文在前期良好綜述的基礎(chǔ)上,對二氧化錫納米復(fù)合薄膜進(jìn)行了系統(tǒng)的研究,并在理論方面建立了氣敏傳感器靈敏度和響應(yīng)時(shí)間的表達(dá)式。
[Abstract]:In this paper, the applications of metal oxide semiconductor films in gas sensors are reviewed. It is found that tin dioxide (SnO2) has good electrical, optical and gas sensing properties in many metal oxide semiconductor materials. Therefore, widely used in gas sensors, solar cells, luminescent materials and other fields. Based on the review, Sn02 nanocomposite films were prepared by sol-gel method. In experiment, SnO2 thin films and SnO2 (CuO-SnO2) films doped with CuO were prepared by using metal inorganic salt SnCl2 _ 2H _ 2O _ 2 CuCl _ 2 2H2O and CH3CH2OH as raw materials. The annealing temperature was systematically studied by means of (XRD), scanning electron microscope (XRD), (SEM), transmission electron microscope (SEM), (TEM) and electrochemical workstation. The effects of spin-coating times and the addition of polyethylene glycol PEG (1000) on the phase, microstructure and electrical properties of SnO2 nanocomposite films were investigated. The results show that the heat treatment temperature is suitable at 450 鈩,
本文編號:2228984
[Abstract]:In this paper, the applications of metal oxide semiconductor films in gas sensors are reviewed. It is found that tin dioxide (SnO2) has good electrical, optical and gas sensing properties in many metal oxide semiconductor materials. Therefore, widely used in gas sensors, solar cells, luminescent materials and other fields. Based on the review, Sn02 nanocomposite films were prepared by sol-gel method. In experiment, SnO2 thin films and SnO2 (CuO-SnO2) films doped with CuO were prepared by using metal inorganic salt SnCl2 _ 2H _ 2O _ 2 CuCl _ 2 2H2O and CH3CH2OH as raw materials. The annealing temperature was systematically studied by means of (XRD), scanning electron microscope (XRD), (SEM), transmission electron microscope (SEM), (TEM) and electrochemical workstation. The effects of spin-coating times and the addition of polyethylene glycol PEG (1000) on the phase, microstructure and electrical properties of SnO2 nanocomposite films were investigated. The results show that the heat treatment temperature is suitable at 450 鈩,
本文編號:2228984
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