濕化學(xué)法制備鍺材料的研究
發(fā)布時(shí)間:2018-07-22 21:22
【摘要】: 金屬Ge材料的制備研究近年來(lái)在國(guó)內(nèi)外受到廣泛關(guān)注,其中包括納微尺度Ge粒子、纖維和薄膜材料。本論文通過(guò)研究六方晶型GeO2粉末與氨水的化學(xué)反應(yīng),合成出了高濃度、高穩(wěn)定性的鍺酸根離子前驅(qū)液。使用還原劑。NaBH4,在室溫下還原此鍺酸根離子前驅(qū)液,合成出了納微尺度Ge納米材料,并對(duì)各類材料的微觀形貌、結(jié)構(gòu)和生長(zhǎng)機(jī)制進(jìn)行了研究。 通過(guò)改變NaBH4與GeO2的比例在相同條件下進(jìn)行反應(yīng),在比例為4-6時(shí)獲得了結(jié)晶性較好的Ge材料。通過(guò)不同反應(yīng)時(shí)間和烘干溫度條件下的實(shí)驗(yàn)發(fā)現(xiàn)制得結(jié)晶性較好Ge材料的反應(yīng)時(shí)間為12小時(shí)以上,烘干溫度為120℃。研究發(fā)現(xiàn)制備Ge納米材料的最佳工藝條件為:前驅(qū)液中Ge02的濃度為3%。NaBH4/GeO2摩爾比為5,還原時(shí)間24小時(shí),120℃烘干。NaBH4還原鍺酸根離子前驅(qū)液12小時(shí)得到的Ge粒子為球型(20-50 nm),24小時(shí)為蠕蟲(chóng)狀。粒子此形狀的變化符合奧斯瓦爾德熟化機(jī)制。 以NaBI-14還原鍺氨溶液所得氫化的Ge溶膠為原料,通過(guò)干燥和蒸鍍可以得到致密Ge薄膜材料。薄膜由直徑在100納米左右的粒子組成。隨著蒸發(fā)溫度的升高,致密Ge薄膜中粒子的結(jié)晶性隨之提高,薄膜厚度增加。Ge薄膜的拉曼光譜在300 cm-1左右有一個(gè)尖銳的峰,對(duì)應(yīng)著晶態(tài)Ge的,在265-270 cm-1左右有一個(gè)強(qiáng)度較弱的峰,對(duì)應(yīng)著非晶態(tài)的Ge,隨著蒸鍍溫度的升高非晶峰逐漸消失,與XRD結(jié)果相一致。Ge薄膜材料由325nm波長(zhǎng)激發(fā)產(chǎn)生的發(fā)光峰主要集中在693nm到835 nm之間,峰的最高點(diǎn)位于753 nm左右。Ge薄膜的拉曼和熒光性質(zhì)與純Ge單晶不同,是由Ge薄膜生長(zhǎng)時(shí)形成的缺陷和晶格內(nèi)應(yīng)力效應(yīng)引起的。我們所制備的Ge薄膜為p型半導(dǎo)體,空穴濃度的數(shù)量級(jí)為1023cm-3,遷移率為60cm2.V-1.s-1。
[Abstract]:In recent years, the preparation of metallic GE materials has attracted extensive attention at home and abroad, including nanoscale GE particles, fibers and thin film materials. In this paper, a high concentration and high stability precursor solution of germanate ion was synthesized by studying the chemical reaction between hexagonal GeO2 powder and ammonia water. Nanoscale GE nanomaterials were synthesized by reducing this germanate ion precursor at room temperature using reductant. NaBH4. The microstructure, microstructure and growth mechanism of various materials were studied. By changing the ratio of NaBH4 to GeO2 under the same conditions, a good crystallinity GE material was obtained when the ratio of NaBH4 to GeO2 was 4-6. Through the experiments under different reaction time and drying temperature, it was found that the crystallization time of GE was more than 12 hours and the drying temperature was 120 鈩,
本文編號(hào):2138612
[Abstract]:In recent years, the preparation of metallic GE materials has attracted extensive attention at home and abroad, including nanoscale GE particles, fibers and thin film materials. In this paper, a high concentration and high stability precursor solution of germanate ion was synthesized by studying the chemical reaction between hexagonal GeO2 powder and ammonia water. Nanoscale GE nanomaterials were synthesized by reducing this germanate ion precursor at room temperature using reductant. NaBH4. The microstructure, microstructure and growth mechanism of various materials were studied. By changing the ratio of NaBH4 to GeO2 under the same conditions, a good crystallinity GE material was obtained when the ratio of NaBH4 to GeO2 was 4-6. Through the experiments under different reaction time and drying temperature, it was found that the crystallization time of GE was more than 12 hours and the drying temperature was 120 鈩,
本文編號(hào):2138612
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