本文選題：熱壁外延 + PbTe膜��； 參考：《吉林大學(xué)》2010年碩士論文

【摘要】： 本文采用HWE(Hot Wall Epitaxy)方法,在Si襯底上生長(zhǎng)了PbTe薄膜,通過改變襯底溫度和進(jìn)行摻雜在Si襯底上制備出了結(jié)構(gòu)不同的PbTe薄膜。使用多種方法研究了薄膜的微觀結(jié)構(gòu),討論了摻雜對(duì)薄膜生長(zhǎng)的影響,n-PbTe/p-Si異質(zhì)結(jié)的I-V性質(zhì)表明,具有很好的整流特性。同時(shí)首次在金剛石襯底上生長(zhǎng)出了PbTe薄膜,分析了PbTe薄膜的結(jié)構(gòu)及生長(zhǎng)機(jī)制,制備了n-PbTe/p-diamond異質(zhì)結(jié),測(cè)量其整流特性,并給出了異質(zhì)結(jié)的能帶結(jié)構(gòu)圖。
[Abstract]:In this paper, PbTe thin films were grown on Si substrates by HWE (Hot Wall Epitaxy) method. PbTe thin films with different structures were prepared by changing the substrate temperature and doping on Si substrates. The microstructure of the films was studied by various methods. The influence of doping on the growth of the films was discussed. The I-V properties of n-PbTep-Si heterostructures showed that the films had good rectifying properties. At the same time, PbTe thin films were grown on diamond substrates for the first time. The structure and growth mechanism of PbTe thin films were analyzed. N-PbTep-diamond heterostructures were prepared, their rectifying characteristics were measured, and the energy band structure diagrams of the heterostructures were given.
【學(xué)位授予單位】：吉林大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2010
【分類號(hào)】：O484.1

【引證文獻(xiàn)】

相關(guān)期刊論文 前1條

1 盧慧粉;曹文田;王書運(yùn);任偉;莊浩;;退火時(shí)間對(duì)磁控濺射Al/PbTe薄膜結(jié)構(gòu)及性能的影響[J];理化檢驗(yàn)(物理分冊(cè));2011年12期

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本文編號(hào)：2113234