本文選題：白光發(fā)光二極管 + 熒光材料�。� 參考：《太原理工大學(xué)》2011年博士論文

【摘要】：發(fā)光二極管(Light Emitting Diode,LED)作為綠色、節(jié)能、長(zhǎng)壽的新一代照明和顯示器件中的光源,將在未來(lái)幾年內(nèi)大規(guī)模取代傳統(tǒng)光源,已成為國(guó)內(nèi)外學(xué)術(shù)界和產(chǎn)業(yè)界的共識(shí)。隨著半導(dǎo)體照明技術(shù)的發(fā)展和推廣應(yīng)用,白光LED的研究已經(jīng)引起各國(guó)科研機(jī)構(gòu)的高度重視。由于熒光材料是白光LED的關(guān)鍵材料之一,因此開(kāi)展白光LED專用熒光材料的研究,無(wú)疑具有重要現(xiàn)實(shí)意義。 本文分別采用高分子網(wǎng)絡(luò)凝膠法、改進(jìn)的溶膠-凝膠法及淀粉燃燒法等濕化學(xué)方法制備了鈰摻雜釔鋁石榴石系列、堿金屬偏釩酸鹽系列和稀土離子摻雜的鍶鈰氧化物系列熒光材料,并著重對(duì)其發(fā)光性能進(jìn)行了表征,探討了其發(fā)光機(jī)理。 (1)制備了能夠與GaN基藍(lán)光LED芯片匹配的Y2.94-xCe0.06GdxAl5O12和Y2.94-xCe0.06PrxAl5O12熒光材料。Gd3+的摻雜通過(guò)使Y2.94-xCe0.06GdxAl5O12中Ce3+的光譜紅移來(lái)改善白光質(zhì)量,其最佳摻雜量x為0.6；Pr3+的摻雜通過(guò)在Y2.94-xCe0.06PrxAl5O12中Ce3+黃光發(fā)射帶上增加紅色線發(fā)射以改善白光質(zhì)量,其最佳摻雜量x為0.01。 (2)采用聚乙烯吡咯烷酮(PVP)對(duì)納米YAG:Ce,Gd進(jìn)行了表面修飾。PVP添加濃度為1.37wt%時(shí),光致發(fā)光強(qiáng)度增強(qiáng)約1.83倍。究其原因不僅歸因于PVP的空間位阻效應(yīng)減少了粉體顆粒間的團(tuán)聚,而且得益于PVP對(duì)納米顆粒的表面鈍化。 (3)制備了能夠與紫外或近紫外LED芯片相匹配的具有寬激發(fā)(吸收)與寬發(fā)射帶的堿金屬偏釩酸鹽(AV03),以單一基質(zhì)實(shí)現(xiàn)了白光。理論計(jì)算及實(shí)驗(yàn)研究結(jié)果表明AV03的發(fā)光均為V04四面體中O2-的2p軌道到V5+的3d空軌道的單電子電荷轉(zhuǎn)移躍遷所致。 (4)系統(tǒng)地研究了丙三醇、聚乙二醇(PEG). PVP表面修飾CsVO3的發(fā)光性能之后,發(fā)現(xiàn)添加2.10wt%的PVP或PEG制備CsVO3可以分別提高其發(fā)光強(qiáng)度2.53倍、3.18倍。通過(guò)研究P(S-MMA)聚合物和Si02與CsVO3復(fù)合后對(duì)發(fā)光性能的影響表明CsVO3/P(S-MMA)熒光微球避免了CsVO3熒光粉的團(tuán)聚,其復(fù)合熒光薄膜擴(kuò)展了CsVO3在柔性發(fā)光與顯示器件中的應(yīng)用；銫硅質(zhì)量比為1：6的CsVO3/SiO2在大氣環(huán)境下存放12個(gè)月后熒光發(fā)射強(qiáng)度僅衰減了2%,較優(yōu)的光學(xué)穩(wěn)定性有利于其在白光LED中的應(yīng)用。 (5)選取Sm3+、Dy3+和Eu3+作為激活離子,采用單、雙摻雜的方式制備出能夠與紫外或近紫外LED芯片匹配的單一基質(zhì)、顏色可調(diào)的Sr2CeO4系列熒光材料。理論計(jì)算及實(shí)驗(yàn)研究結(jié)果表明Sr1.964Eu0.03Dy0.006CeO4白光材料光色特性較優(yōu),相應(yīng)色坐標(biāo)為(0.391,0.372),相關(guān)色溫為3647K。 Sr2CeO4的光致發(fā)光來(lái)源于晶體結(jié)構(gòu)中兩種不同的Ce4+-O2-電荷轉(zhuǎn)移帶躍遷。Eu3+單摻雜Sr2Ce04的光致發(fā)光主要為能量傳遞機(jī)理,特別地,Eu3+-Dy3+雙摻雜Sr2Ce04的發(fā)光不僅存在Sr2Ce04與Eu3+和Dy3+、Eu3+和Dy3+之間的能量傳遞過(guò)程,還存在Sr2Ce04晶體中缺陷的影響。
[Abstract]:As a new generation of light source in green, energy-saving and long-lived lighting and display devices, Light emitting Diode (LED) will replace the traditional light source on a large scale in the next few years, which has become the consensus of academia and industry at home and abroad. With the development and application of semiconductor lighting technology, the research of white LED has been paid great attention to by scientific research institutions all over the world. As fluorescent materials are one of the key materials of white LED, it is undoubtedly of great practical significance to study the special fluorescent materials for white LED. In this paper, the series of cerium doped yttrium aluminum garnet were prepared by macromolecule network gel method, modified sol-gel method and starch combustion method. The luminescent properties of alkaline metavanadate series and rare earth ions doped strontium cerium oxide series were characterized. The luminescence mechanism of Y2.94-xCe0.06GdxAl5O12 and Y2.94-xCe0.06PrxAl5O12 was investigated. (1) the doping of Y2.94-xCe0.06PrxAl5O12 and Y2.94-xCe0.06PrxAl5O12 improved the white light quality by red-shifting the spectra of Ce3 in Y2.94-xCe0.06GdxAl5O12. The white light quality can be improved by adding red line emission to the yellow emission band of ce 3 in Y2.94-xCe0.06PrxAl5O12. The optimum doping amount x is 0.01.2.2.When the surface modification of nano-YAGWO-Ce5O12 was carried out by polyvinylpyrrolidone (PVP), the concentration of PVP was 1.37 wt%. The intensity of photoluminescence increased by about 1.83 times. The reason is not only due to the space steric resistance effect of PVP, but also to the reduction of agglomeration between particles. In addition, due to the surface passivation of nanoparticles by PVP. (3) Alkali metal metavanadate (AV03) with wide excitation (absorption) and wide emission band (AV03), which can match ultraviolet or near-ultraviolet LED chips, was prepared and white light was realized by a single substrate. The theoretical and experimental results show that the luminescence of AV03 is due to the single electron charge transfer transition from the O _ 2-O _ 2p orbital to the 3D empty orbit of V _ 5 in the V _ 04 tetrahedron. (4) Propanetriol and polyethylene glycol (PEG) have been systematically studied. After modification of CsVO3 with PVP surface, it was found that the luminescence intensity of CsVO3 prepared by adding 2.10wt% PVP or PEG could be increased by 2.53 times or 3.18 times, respectively. The effects of P (S-MMA) polymer and Si02 / CsVO3 on the luminescence properties of CsVO3 phosphors were investigated. It was shown that CsVO3 / P (S-MMA) fluorescent microspheres could avoid the agglomeration of CsVO3 phosphors, and the composite fluorescent films extended the applications of CsVO3 in flexible luminescence and display devices. CsVO _ 3 / Sio _ 2, whose mass ratio of cesium to silicon is 1:6, only attenuates the emission intensity of CSV _ 3 / Sio _ 2 in atmospheric environment for 12 months, and the better optical stability is favorable for its application in white LED. (5) Sm ~ 3 Dy _ 3 and EU _ 3 are selected as activation ions. A series of Sr2CeO4 fluorescent materials, which can match ultraviolet or near-ultraviolet LED chips, have been prepared by double doping method, and the color of Sr2CeO4 can be adjusted. The theoretical calculation and experimental results show that the photochromatic properties of Sr1.964Eu0.03Dy0.006CeO4 are better, the corresponding color coordinate is (0.391U) 0.372, and the correlation color temperature is 3647K. The photoluminescence of Sr _ 2CeO _ 4 originates from the energy transfer mechanism of two different ce _ 4-O _ 2-charge transfer band transitions. In particular, there exists not only the energy transfer process between Sr2Ce04 and EU3, Dy3 + EU3 and Dy3, but also the effect of defects in Sr2Ce04 crystal on the luminescence of Eu3-Dy3 doped Sr2Ce04.
【學(xué)位授予單位】：太原理工大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2011
【分類號(hào)】：TN104.3

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