本文選題：同步輻射掠入射X射線衍射 + 鈣鈦礦薄膜��； 參考：《核技術(shù)》2016年06期

【摘要】：通過調(diào)控薄膜生長襯底溫度,提出了一種改良的蒸汽輔助沉積法制備有機-無機混合鈣鈦礦薄膜,可以更為可控優(yōu)化薄膜生長條件。用同步輻射掠入射X射線衍射(Grazing Incidence X-ray Diffraction,GIXRD)結(jié)合掃描電鏡(Scanning Electron Microscope,SEM)、紫外可見吸收譜(UV-Visible Absorption Spectrum)等表征方法證明襯底溫度對制備的鈣鈦礦薄膜質(zhì)量具有重要的作用:較低的襯底溫度(約70?C)有助于鈣鈦礦晶粒的形成,其結(jié)晶性、晶面擇優(yōu)生長取向均較好,同時具有較高的光吸收性能;當(dāng)襯底溫度升高時(100?C、125?C),所制備的鈣鈦礦薄膜結(jié)晶性變?nèi)?晶體擇優(yōu)生長取向明顯變差,光吸收性能隨之下降。研究結(jié)果有助于進一步優(yōu)化蒸汽輔助沉積法制備鈣鈦礦薄膜工藝。
[Abstract]:An improved vapor assisted deposition method was proposed to prepare organic-inorganic mixed perovskite films by adjusting the substrate temperature. The growth conditions of the films could be more controllable. Scanning electron microscopy (SEM), scanning electron microscopy (SEM) and UV-Visible Absorption spectrum (UV-Vis) were used to characterize the perovskite films. The results show that substrate temperature plays an important role in the quality of perovskite films. The bottom temperature (about 70 鈩，

本文編號：2053918