Sol-gel法制備稀土摻雜ZAO薄膜的紅外發(fā)射率及光致發(fā)光特性研究
發(fā)布時(shí)間:2018-06-21 05:31
本文選題:ZAO + 溶膠凝膠方法。 參考:《南京航空航天大學(xué)》2011年碩士論文
【摘要】:利用溶膠凝膠法,在石英玻璃的基底上沉積了鑭系稀土元素和Al共摻的ZnO薄膜,利用了XRD衍射和SEM分別研究了薄膜的結(jié)構(gòu)和表面形貌。在不同Er摻雜濃度和退火溫度下研究了ZAOEr薄膜在8~14μm的紅外發(fā)射率和光學(xué)性質(zhì)。 ZAOEr薄膜具有六方纖鋅礦的結(jié)構(gòu),并且沿(002)晶向擇優(yōu)生長(zhǎng),可見(jiàn)光范圍內(nèi)的透光率在85%以上。薄膜的禁帶寬度會(huì)隨著Er含量的增加而出現(xiàn)紅移。當(dāng)激發(fā)波長(zhǎng)為290nm時(shí),可觀察到一個(gè)紫光發(fā)射和藍(lán)光發(fā)射。當(dāng)激發(fā)波長(zhǎng)為370nm,可觀察到一個(gè)強(qiáng)烈的綠光發(fā)射。CL譜中305nm處出現(xiàn)的紫外峰與Er~(3+)的摻雜有關(guān)。大體上,隨著熱處理溫度的升高,ZAOEr薄膜的紅外發(fā)射率呈下降趨勢(shì),并且在退火溫度為900℃,Er摻雜濃度為2 at.%時(shí)其紅外發(fā)射率最小,為0.749。 研究了不同稀土元素(Y~(3+)、La~(3+)、Ce~(3+)、Pr~(3+)、Nd~(3+)、Sm~(3+)、Eu~(3+)、Gd~(3+)、Tb~(3+)、Dy~(3+)、Ho~(3+)、Er~(3+)、Yb~(3+)和Lu~(3+))摻雜的ZAOR薄膜的紅外發(fā)射率和光學(xué)性質(zhì),ZAOR薄膜在可見(jiàn)光的透光率在85%以上,和ZAO薄膜相比,隨著稀土元素的摻入,禁帶寬度出現(xiàn)了減小,當(dāng)激發(fā)波長(zhǎng)為370nm時(shí),可觀察到強(qiáng)烈的綠光發(fā)射峰,其中ZAOGd薄膜的綠光發(fā)射峰強(qiáng)度最強(qiáng)。ZAONd薄膜具有最小的紅外發(fā)射率0.753。陰極熒光譜中310nm左右出現(xiàn)的紫外峰與稀土離子的摻雜有關(guān)。 研究了不同轉(zhuǎn)速條件下ZnO,ZAO和ZAOEr顯微形貌的影響,探討了不同轉(zhuǎn)速對(duì)薄膜透光性能和光致發(fā)光性能的影響,轉(zhuǎn)速在2000rpm時(shí)的(002)峰的強(qiáng)度要高于其他轉(zhuǎn)速條件。同時(shí)純ZnO薄膜的C軸擇優(yōu)取向性要強(qiáng)于摻雜后的薄膜。隨著轉(zhuǎn)速的升高,薄膜致密性下降,孔隙增多。ZnO薄膜近帶邊發(fā)射峰隨著Al~(3+)和Er~(3+)的摻入,強(qiáng)度下降,深能級(jí)發(fā)射峰則進(jìn)一步增強(qiáng),隨著轉(zhuǎn)速的降低,深能級(jí)發(fā)射峰的強(qiáng)度逐漸升高。
[Abstract]:Lanthanide rare earth elements and Al co-doped ZnO thin films were deposited on quartz glass substrates by sol-gel method. The structure and surface morphology of the films were investigated by XRD and SEM, respectively. The infrared emissivity and optical properties of ZAOEr thin films at 814 渭 m have been studied at different er doping concentrations and annealing temperatures. ZAOEr thin films have hexagonal wurtzite structure and preferential growth along the crystal direction. The transmittance of visible light is more than 85%. The band gap of the film will shift red with the increase of er content. When the excitation wavelength is 290nm, a purple emission and blue emission can be observed. When the excitation wavelength is 370 nm, it is observed that the UV peak at 305nm in the green emission. CL spectrum is related to the doping of Ernion 3). In general, the infrared emissivity of ZAOEr thin films decreases with the increase of heat treatment temperature, and the infrared emissivity is 0.749 when the annealing temperature is 900 鈩,
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