實驗室流化床法制備太陽能級多晶硅研究
發(fā)布時間:2018-05-28 14:22
本文選題:能源 + 太陽能級多晶硅; 參考:《青海大學》2010年碩士論文
【摘要】: 隨著全球太陽能電池產量快速增加,直接拉動了多晶硅需求的迅猛增長。多晶硅的生產仍是光伏產業(yè)鏈的能力制約因素。目前,太陽能級多晶硅制備的主流技術有改良西門子技術和硅烷法。由于國外技術封鎖,我國現(xiàn)在引進的西門子技術三廢問題多,能耗大。因此,依托高校以及研究院所,加強新一代低成本工藝技術基礎性及前瞻性研究,建立低成本高純度(太陽能級)多晶硅研究開發(fā)的知識及技術創(chuàng)新體系,對多晶硅生產工藝進行進一步開發(fā)和完善,獲得具有自主知識產權的生產工藝和技術,就具有迫切的現(xiàn)實意義。 本研究采用自行設計的流化床反應器,通過還原反應對高純硅進行反應處理,在其表面沉積出高純度多晶硅,其中對環(huán)境污染小,對外依賴性小。實驗中自行設計了一整套以流化床為核心的實驗裝置,并在此基礎上探索了多晶硅的流化床法制備工藝,成功地制備了太陽能級多晶硅,其沉積率達到26.18%,純度達到99.9992255%-99.9999026%。 利用JSM-5610LV/INCA型掃描電子顯微鏡、MS2000型激光粒度分析儀及ICP光譜儀對樣品進行了形貌、粒度變化及純度分析。
[Abstract]:With the rapid growth of global solar cell output, the demand for polysilicon has increased rapidly. The production of polysilicon is still the ability restriction factor of photovoltaic industry chain. At present, the main technologies of solar-grade polysilicon preparation are improved Siemens technology and silane process. As a result of the foreign technology blockade, our country now imports Siemens technology three waste problem many, the energy consumption is big. Therefore, relying on the universities and research institutes, strengthening the basic and prospective research of the new generation of low-cost technology, the knowledge and technological innovation system of low-cost high-purity (solar grade) polysilicon research and development is established. It is of urgent practical significance to further develop and perfect the polysilicon production process and obtain the production process and technology with independent intellectual property rights. In this study, a self-designed fluidized bed reactor was used to treat high purity silicon through reduction reaction, and high purity polysilicon was deposited on its surface, in which environmental pollution and external dependence were small. A set of experimental devices with fluidized bed as the core was designed in the experiment. On the basis of this, the preparation process of polysilicon by fluidized bed method was explored. The solar grade polycrystalline silicon was successfully prepared. The deposition rate was 26.18% and the purity was 99.9992 255-99.9999026. The morphology, particle size change and purity of the samples were analyzed by JSM-5610LV/INCA scanning electron microscope (SEM) and MS2000 laser particle size analyzer and ICP spectrometer.
【學位授予單位】:青海大學
【學位級別】:碩士
【學位授予年份】:2010
【分類號】:TM914.4
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