本文選題：金屬有機化學氣相沉積 + ZnO薄膜��； 參考：《吉林大學》2011年博士論文

【摘要】：氧化鋅材料是一種直接帶隙寬禁帶半導體材料,其在固體照明、信息存儲以及顯示領(lǐng)域具有巨大的應用潛力。然而,高質(zhì)量、穩(wěn)定、可重復的p-ZnO薄膜的制備一直存在較大困難,使得ZnO基高效率紫外發(fā)光器件的研究進展緩慢。本論文采用MOCVD技術(shù),圍繞高質(zhì)量ZnO薄膜的制備、ZnO的p型摻雜和ZnO基同質(zhì)結(jié)、異質(zhì)結(jié)發(fā)光二極管的制備等方面開展了相關(guān)的一系列工作。同時,在制備ZnO薄膜晶體管方面也進行了初步的研究。 本論文首先采用MOCVD生長技術(shù)在c面藍寶石、GaN/Al2O3襯底上制備了ZnO薄膜,采用多種測試手段對制備的ZnO薄膜進行了表征分析,重點研究了生長溫度以及鋅氧比對薄膜結(jié)晶質(zhì)量、形貌以及發(fā)光質(zhì)量等方面的影響。通過實驗得到了獲得較高質(zhì)量ZnO薄膜相對優(yōu)化的生長條件。 其次介紹了針對兩種v族元素As和P的不同摻雜方法。對于As元素,采用了GaAs夾層的摻雜技術(shù),通過熱擴散工藝制備了As摻雜的p型ZnO薄膜。對于P元素,采用了升華的方法,制備出P摻雜的p-ZnO。通過優(yōu)化生長條件,得到了載流子濃度在1017cm-3量級的p-ZnO薄膜。 以前面As摻雜制備p型ZnO的研究為基礎(chǔ),在ITO玻璃襯底上制備出具有紫外電致發(fā)光特性的ZnO同質(zhì)結(jié)LED；以P摻雜制備p型ZnO的研究為基礎(chǔ),在n-GaN/Al2O3襯底上制備了p-ZnO:P/n-GaN異質(zhì)結(jié)構(gòu)的ZnO基發(fā)光器件。此外,還在ITO玻璃襯底上制備了基于MIS結(jié)構(gòu)的發(fā)光器件。三種器件結(jié)構(gòu)均表現(xiàn)出明顯的整流特性,實現(xiàn)了室溫下的電致發(fā)光。其中,p-ZnO:P/n-GaN異質(zhì)結(jié)構(gòu)ZnO基發(fā)光器件,實現(xiàn)了室溫電泵浦紫外光激射。 最后,采用MOCVD方法在ITO玻璃襯底表面制備了以MgO為絕緣介質(zhì)的ZnO薄膜晶體管,優(yōu)化后器件的開關(guān)比達到了105量級。
[Abstract]:However , high quality , stable and repeatable preparation of p - ZnO thin films has been difficult , so that the research progress of ZnO - based high - efficiency ultraviolet light - emitting devices has been slow . In this paper , the related series of work has been carried out on the preparation of high - quality ZnO thin films , the p - type doping of ZnO and the preparation of ZnO - based homogenous junctions and heterojunction light - emitting diodes .


ZnO thin films were prepared on c - plane sapphire and GaN / Al _ 2O _ 3 substrates by MOCVD growth technique . The effects of growth temperature and Zn / O ratio on the crystal quality , morphology and luminescence quality were studied .


A p - type ZnO thin film doped with As was prepared by thermal diffusion . The p - ZnO film doped p - ZnO was prepared by means of thermal diffusion . The p - ZnO film doped p - ZnO was prepared by means of thermal diffusion . The p - ZnO film with carrier concentration on the order of 1017cm - 3 was obtained by optimizing the growth conditions .


On the basis of the previous study on preparation of p - type ZnO , ZnO homojunction LED with ultraviolet electroluminescence characteristics was prepared on ITO glass substrate .
A p - ZnO : P / n - GaN heterostructure ZnO - based light - emitting device was prepared on an n - GaN / Al _ 2O _ 3 substrate . The light - emitting device based on MIS structure was fabricated on ITO glass substrate .


Finally , a ZnO thin film transistor with MgO as an insulating medium is prepared on the surface of ITO glass substrate by MOCVD method , and the switching ratio of the optimized device is on the order of 105 .

【學位授予單位】：吉林大學
【學位級別】：博士
【學位授予年份】：2011
【分類號】：TN304.055;TN321.5

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本文編號：1892068