本文選題：鉭摻雜氧化鋅 + 磁控濺射法��； 參考：《人工晶體學(xué)報(bào)》2017年09期

【摘要】：采用射頻磁控濺射法,在不同的襯底溫度下制備了鉭(Ta)摻雜的氧化鋅(ZnO)薄膜,采用X射線能譜(EDS)、X射線衍射(XRD)、掃描電鏡(SEM)、紫外-可見(jiàn)分光光度計(jì)和光致發(fā)光(PL)光譜研究了襯底溫度對(duì)制備的Ta摻雜ZnO薄膜的組分、微觀結(jié)構(gòu)、形貌和光學(xué)特性的影響。EDS的檢測(cè)結(jié)果表明,Ta元素成功摻入到了ZnO薄膜;XRD圖譜表明,摻入的Ta雜質(zhì)是替代式雜質(zhì),沒(méi)有破壞ZnO的六方晶格結(jié)構(gòu),隨著襯底溫度的升高,(002)衍射峰的強(qiáng)度先增大后降低,在400℃時(shí)達(dá)到最大;SEM測(cè)試表明當(dāng)襯底溫度較高時(shí)(400℃和500℃),Ta摻雜ZnO薄膜的晶粒明顯變大;紫外-可見(jiàn)透過(guò)光譜顯示,在可見(jiàn)光范圍,Ta摻雜ZnO薄膜的平均透光率均高于80%,襯底不加熱時(shí)制備的Ta摻雜ZnO的透光率最高;制備的Ta摻雜ZnO薄膜的禁帶寬度范圍為3.34~3.37 e V,襯底溫度為500℃時(shí)制備的Ta摻雜ZnO薄膜的禁帶寬度最小,為3.34 e V。PL光譜表明襯底溫度為500℃時(shí)制備的Ta摻雜ZnO薄膜中缺陷較多,這也是造成薄膜禁帶寬度變小的原因。
[Abstract]:Ta doped ZnO thin films were prepared by RF magnetron sputtering at different substrate temperatures. The composition and microstructure of Ta doped ZnO films prepared by substrate temperature were studied by means of X-ray energy dispersive spectroscopy (EDS), X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-Vis spectrophotometer and photoluminescence (PL) spectra. Effects of morphology and optical properties. The results showed that Ta elements were successfully doped into ZnO films. The results showed that the doped Ta impurities were substituted impurities and did not destroy the hexagonal lattice structure of ZnO. With the increase of substrate temperature, the intensity of diffraction peak first increases and then decreases, and the maximum intensity is obtained at 400 鈩，

本文編號(hào)：1795122