本文選題：銅銦鎵硒　切入點(diǎn)：單靶磁控濺射　出處：《電子科技大學(xué)》2011年碩士論文

【摘要】：銅銦鎵硒(CIGS)薄膜太陽(yáng)能電池具有抗輻射能力強(qiáng)、光電轉(zhuǎn)化效率高、工作性能穩(wěn)定等特點(diǎn),是最有發(fā)展前景的太陽(yáng)能電池之一。CIGS光吸收層薄膜的主要制備方法是多源共蒸發(fā)法和濺射-硒化法。用共蒸發(fā)法制備的CIGS器件的光電轉(zhuǎn)換效率已經(jīng)達(dá)到20.3%,是目前CIGS薄膜太陽(yáng)能電池的最高轉(zhuǎn)化效率紀(jì)錄。但是共蒸發(fā)法工藝難度大、成品率低、原料利用率低。濺射-硒化工藝不僅可大面制備CIGS薄膜,原材料利用率高,而且濺射法制備的前驅(qū)體薄膜致密性高,組分均勻性好,元素的化學(xué)配比可調(diào)。缺點(diǎn)是硒化工藝耗時(shí)長(zhǎng)、產(chǎn)率低。 鑒于目前CIGS光吸收層薄膜制備工藝的優(yōu)缺點(diǎn),本論文創(chuàng)新性的采用磁控濺射CIGS四元化合物靶,并省去后硒化或退火處理,一步法制備CIGS薄膜。在此,對(duì)CIGS薄膜的制備工藝進(jìn)行了較為系統(tǒng)的探索研究,主要研究?jī)?nèi)容如下: (1)研究了背電極Mo層對(duì)CIGS層形貌和結(jié)晶性的影響。通過(guò)觀察不同條件下沉積的Mo層對(duì)CIGS層表面形貌、薄膜結(jié)晶性的影響,最終確定Mo層的最佳濺射參數(shù)。 (2)以磁控濺射的襯底溫度、濺射氣壓、靶基距和濺射功率這四個(gè)主要參數(shù)為出發(fā)點(diǎn),詳細(xì)研究濺射參數(shù)對(duì)CIGS薄膜結(jié)晶性、表面形貌、薄膜致密度和薄膜生長(zhǎng)機(jī)理的影響。通過(guò)改善濺射參數(shù),最終制備出結(jié)晶性好、平整致密的CIGS薄膜。 (3)首次觀察到CIGS微米柱。在低濺射功率、高濺射氣壓、高襯底溫度條件下沉積的CIGS薄膜會(huì)出現(xiàn)直徑在幾百納米到數(shù)微米的微米柱。通過(guò)SEM對(duì)CIGS微米柱進(jìn)行形貌觀察,并以此對(duì)其生長(zhǎng)機(jī)理進(jìn)行了探討。 (4)研究CIGS薄膜太陽(yáng)能電池的制備工藝,并制備出無(wú)鎘CIGS薄膜太陽(yáng)能電池。對(duì)制備出的CIGS薄膜太陽(yáng)能電池的輸出特性進(jìn)行測(cè)量,依據(jù)輸出曲線(xiàn)對(duì)電池制備工藝進(jìn)行評(píng)析。
[Abstract]:Copper indium gallium selenite (CIGS) thin film solar cells have the advantages of strong radiation resistance, high photoelectric conversion efficiency and stable working performance. The main preparation methods of CIGS optical absorption layer thin films are multi-source co-evaporation and sputtering and selenization. The photoelectric conversion efficiency of CIGS devices prepared by co-evaporation has reached 20.3, which is at present. The highest conversion efficiency of CIGS thin film solar cells is recorded. But the co-evaporation process is very difficult. The sputtering and selenization process can not only produce CIGS thin films on a large surface, but also have high density and good homogeneity of the precursor films prepared by sputtering, and the utilization of raw materials is high, the yield of products is low and the utilization rate of raw materials is low. The chemical ratio of elements can be adjusted. The disadvantage is that the selenization process takes a long time and the yield is low. In view of the advantages and disadvantages of the current preparation process of CIGS optical absorption film, in this paper, the magnetron sputtering CIGS quaternary compound target is innovatively used, and the CIGS thin film is prepared by one step method without se treatment or annealing. The preparation process of CIGS thin films is studied systematically. The main contents are as follows:. The effect of Mo layer on the morphology and crystallinity of CIGS layer was studied. The optimum sputtering parameters of Mo layer were determined by observing the effect of Mo layer on surface morphology and crystallinity of CIGS layer under different conditions. Based on the four main parameters of magnetron sputtering, such as substrate temperature, sputtering pressure, target distance and sputtering power, the effects of sputtering parameters on the crystallinity and surface morphology of CIGS thin films were studied in detail. By improving the sputtering parameters, CIGS thin films with good crystallinity and flat density were prepared. CIGS films deposited at low sputtering power, high sputtering pressure and high substrate temperature will have micron columns ranging from several hundred nanometers to several microns in diameter. The morphology of CIGS micron columns will be observed by SEM. The growth mechanism was discussed. (4) the preparation process of CIGS thin film solar cell is studied, and the cadmium free CIGS thin film solar cell is prepared. The output characteristics of the prepared CIGS thin film solar cell are measured, and the preparation process of the cell is evaluated according to the output curve.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2011
【分類(lèi)號(hào)】：TM914.4

【引證文獻(xiàn)】

相關(guān)碩士學(xué)位論文 前2條

1 徐曉輝;CIGS薄膜太陽(yáng)能電池關(guān)鍵功能層的制備及表征[D];電子科技大學(xué);2012年

2 齊彬彬;CIGS雙梯度帶隙吸收層的制備及特性[D];內(nèi)蒙古大學(xué);2013年

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本文編號(hào)：1654001