MOD法制備YBCO高溫超導(dǎo)帶材緩沖層研究
發(fā)布時(shí)間:2018-03-20 21:10
本文選題:MOD 切入點(diǎn):氧化鈰 出處:《電子科技大學(xué)》2010年碩士論文 論文類型:學(xué)位論文
【摘要】: 第二代高溫超導(dǎo)帶材YBa2Cu3O7-δ(YBCO)具有高的上臨界磁場(chǎng)、高臨界電流密度(Jc(T,H)104A/cm2,1T)、低交流損耗等優(yōu)點(diǎn),使其成為了高溫超導(dǎo)材料的研究熱點(diǎn)。由于工程應(yīng)用的需要,二代超導(dǎo)帶材需要制作在柔性基帶上,為了解決直接在柔性金屬基帶上制備超導(dǎo)薄膜存在的基帶易被氧化、金屬與YBCO晶格失配度大等問(wèn)題,需要在金屬基帶與超導(dǎo)層之間生長(zhǎng)緩沖層。 在眾多過(guò)渡層薄膜制備工藝中,金屬有機(jī)物沉積(MOD)法可以精確控制薄膜的成分,不需要昂貴的真空系統(tǒng),可實(shí)現(xiàn)連續(xù)化的工業(yè)生產(chǎn)。因此本文選用MOD法在具有雙軸織構(gòu)的鎳鎢合金(Ni-5at.%W)基帶上分別制備了CeO2和La2Zr2O7兩種非常有潛力的緩沖層薄膜,并研究了工藝條件對(duì)薄膜的結(jié)構(gòu)和表面形貌的影響。 首先,本論文對(duì)制備CeO2的工藝條件進(jìn)行了研究。通過(guò)對(duì)前驅(qū)液配制的大量研究,最終確定了以乙酰丙酮鈰為溶質(zhì),冰乙酸為溶劑,在60℃下水浴30min,得到的前驅(qū)溶液穩(wěn)定性較好。對(duì)前驅(qū)液濃度、旋涂參數(shù)、退火氣氛、退火溫度、升溫速率、退火時(shí)間進(jìn)行優(yōu)化后,確定前驅(qū)液濃度為0.1M、甩膠速率4000rpm、甩膠時(shí)間30s,Ar+4%H2還原性氣氛下,退火溫度1000℃、快速退火、保溫時(shí)間60min條件下所制備的CeO2薄膜具有(200)單一取向,面內(nèi)外半高寬在6.0°以下,晶粒大小100nm左右,表面均方根粗糙度5nm左右。 然后,又對(duì)La2Zr2O7薄膜的制備工藝進(jìn)行了研究。以乙酰丙酮鋯和乙酰丙酮鑭為溶質(zhì),丙酸為溶劑制備前驅(qū)液。優(yōu)化工藝參數(shù)后確定前驅(qū)溶液陽(yáng)離子總濃度為0.8M,甩膠速率4000rpm,甩膠時(shí)間30s,退火溫度為940℃,保溫時(shí)間為60min條件下所制備的La2Zr2O7薄膜具有(400)單一取向,面內(nèi)外半高寬在6.0°左右,晶粒大小100nm左右,表面均方根粗糙度2nm左右。
[Abstract]:The second generation high temperature superconducting tape YBA _ 2Cu _ 3O _ 7- 未 YBCO) has the advantages of high supercritical magnetic field, high critical current density and low AC loss. The second generation superconducting tapes need to be fabricated on flexible substrates. In order to solve the problems such as easy oxidation of the subband and the mismatch between metal and YBCO lattice, the superconducting films prepared directly on the flexible metal substrates are easy to be oxidized. A buffer layer needs to be grown between the metal substrate and the superconducting layer. In the process of preparing transition layer films, the metal organic deposition (MOD) method can accurately control the composition of the films without the need for expensive vacuum systems. The continuous industrial production can be realized. Therefore, two kinds of CeO2 and La2Zr2O7 buffer layer thin films have been prepared by MOD method on Ni-W alloy Ni 5at. W) subband with biaxial texture, respectively. The effect of processing conditions on the structure and surface morphology of the films was studied. First of all, the preparation conditions of CeO2 were studied in this paper. Through a lot of research on the preparation of precursor solution, it was determined that cerium acetylacetone was used as solute and acetic acid as solvent. The precursor solution is stable at 60 鈩,
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