溶膠-凝膠法制備五氧化二釩薄膜材料及其性能研究
發(fā)布時間:2018-03-12 23:29
本文選題:V_2O_5薄膜 切入點:無機溶膠-凝膠法 出處:《昆明理工大學(xué)》2011年碩士論文 論文類型:學(xué)位論文
【摘要】:本論文首先對作為功能材料的V2O5薄膜的研究現(xiàn)狀進行了概述。圍繞V2O5薄膜的無機溶膠-凝膠制備工藝、通過SEM、XRD、U-V光譜分析和CV等檢測手段對其組織結(jié)構(gòu)和性能進行了一系列的研究,具體結(jié)論如下: 采用改進的無機溶膠-凝膠法,研究了實驗條件對制備V2O5溶膠和V2O5薄膜結(jié)構(gòu)和性能的影響。實驗結(jié)果表明,采用電磁結(jié)合超聲波的攪拌方式能夠達到促進晶粒細化,制備性能良好的V2O5溶膠體系。熱處理后的XRD分析表明:在不同襯底上獲得具有不同取向生長的V2O5薄膜,采用提拉法時,ITO導(dǎo)電玻璃襯底上的V2O5薄膜具有β-V2O5結(jié)構(gòu),載玻片襯底上的V2O5薄膜具有γ-V2O5結(jié)構(gòu),研究發(fā)現(xiàn)由于在不同襯底上附著力和內(nèi)應(yīng)力不同,經(jīng)過熱處理的作用,V-O鍵的動力學(xué)和熱力學(xué)穩(wěn)定性發(fā)生改變,促使這個薄膜結(jié)構(gòu)發(fā)生轉(zhuǎn)變。采用電泳沉積法時,電壓為15V時,薄膜結(jié)構(gòu)為屬于α-V205結(jié)構(gòu),而沉積電壓為20V和25V時,薄膜具有α-V2O5和β-V2O5共存的結(jié)構(gòu)。 U-V光譜分析表明:由于制備方法和薄膜結(jié)構(gòu)不同,在350nm~420nm的短波區(qū),α-V2O5結(jié)構(gòu)的薄膜吸收率最高,β-V2O5結(jié)構(gòu)的次之,γ-V2O5結(jié)構(gòu)的最低,在550nm以上的可見光區(qū),γ-V2O5結(jié)構(gòu)的薄膜透射率最高,達到77%左右,α-V2O5結(jié)構(gòu)的最低,只有56%左右,不同結(jié)構(gòu)的V2O5薄膜透射率變化基本相似。 CV測試表明:不同制備方法制備的V2O5薄膜均出現(xiàn)了形狀極不對稱還原氧化峰,說明鋰離子在V2O5薄膜材料中的嵌入和脫出是一個多相的反應(yīng)過程,生成了不同相的釩青銅,鋰離子可以在V2O5薄膜中進行可逆的嵌入/脫嵌。 報道了V2O5納米線的制備過程并對其光學(xué)性能進行了研究。本實驗通過對ITO導(dǎo)電玻璃上V2O5薄膜熱處理機制的控制,500℃熱處理后制備了β結(jié)構(gòu)的V2O5納米線,無需高溫高壓的條件,且設(shè)備及工藝過程簡單,對研究V2O5納米線的制備具有一定的參考價值。U-V光譜分析表明:400℃和500℃熱處理的V2O5納米線具有大致相同的透射率,但隨著熱處理溫度的升高,V2O5薄膜透射率降低。
[Abstract]:In this paper, the research status of V _ 2O _ 5 thin films as functional materials is summarized. The preparation process of inorganic sol-gel for V _ 2O _ 5 thin films is introduced. A series of studies were carried out on its structure and properties by means of SEMN XRDU U-V spectrum analysis and CV. The specific conclusions are as follows:. The effects of experimental conditions on the structure and properties of V _ 2O _ 5 sol and V _ 2O _ 5 thin films were studied by an improved inorganic sol-gel method. After heat treatment, V _ 2O _ 5 thin films with different orientation were obtained on different substrates, and V _ 2O _ 5 films on conductive glass substrates with 尾 -V _ 2O _ 5 structure were obtained by Czochralski method. The V _ 2O _ 5 thin films on glass substrates have 緯 -V _ 2O _ 5 structure. It is found that due to the different adhesion and internal stress on different substrates, the dynamic and thermodynamic stability of V-O bond after heat treatment is changed. By electrophoretic deposition method, the structure of the film is 偽 -V205 when the voltage is 15V, and the structure is 偽 -V _ 2O _ 5 and 尾 -V _ 2O _ 5 when the deposition voltage is 20V and 25V, and the structure of the film is 偽 -V _ 2O _ 5 and 尾 -V _ 2O _ 5 when the electrophoretic deposition method is used. U-V spectroscopic analysis shows that the absorption rate of 偽 -V _ 2O _ 5 structure is the highest, 尾 -V _ 2O _ 5 structure is the second, 緯 -V _ 2O _ 5 structure is the lowest, and the transmittance of 緯 -V _ 2O _ 5 structure is the highest in the visible region above 550 nm due to the difference of preparation method and the structure of the thin film, in the region of 350nm 420nm, 偽 -V _ 2O _ 5 structure has the highest absorption rate, and 尾 -V _ 2O _ 5 structure has the lowest structure. About 77%, the 偽 -V _ 2O _ 5 structure is the lowest, only about 56%. The transmittance changes of different structure V _ 2O _ 5 thin films are similar. CV test showed that the V _ 2O _ 5 thin films prepared by different preparation methods had a very asymmetric reduction and oxidation peak, which indicated that the intercalation and removal of lithium ions in V _ 2O _ 5 thin films was a multiphase reaction process, and vanadium bronze with different phases was formed. Lithium ions can be reversibly embedded / deintercalated in V _ 2O _ 5 thin films. The preparation process and optical properties of V _ 2O _ 5 nanowires are reported in this paper. The 尾 -structure V _ 2O _ 5 nanowires were prepared by controlling the heat treatment mechanism of V _ 2O _ 5 thin films on ITO conductive glass after heat treatment at 500 鈩,
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