本文關(guān)鍵詞： AZO透明導(dǎo)電薄膜 磁控濺射 濺射功率 光學(xué)性能 電學(xué)性能　出處：《暨南大學(xué)》2011年碩士論文　論文類型：學(xué)位論文

【摘要】：近年來,透明導(dǎo)電薄膜己成為液晶顯示、觸控面板、太陽能電池等的關(guān)鍵性材料之一,越來越受到人們的重視。且隨著LCD的商品化、彩色化、大型化和提高太陽能電池能量轉(zhuǎn)換效率的要求,對透明導(dǎo)電薄膜的要求也越來越高,需滿足如下條件：電阻率低；透過率高；鍍膜溫度更接近室溫；熱穩(wěn)定性優(yōu)良；耐熱性和耐堿性優(yōu)良；硬度高；表面形狀良好；與基底的附著性良好；能大面積均勻地鍍膜；價格較低等。 研究發(fā)現(xiàn),摻鋁氧化鋅(AZO)薄膜具有同ITO薄膜可比擬的光電特性,且在等離子體中化學(xué)穩(wěn)定性較好、氧化鋅和鋁材料來源豐富、價格低廉、幾乎無毒性,逐漸成為化合物半導(dǎo)體材料中一個新的研究熱點,呈現(xiàn)取代ITO薄膜的趨勢,開始逐步應(yīng)用到眾多領(lǐng)域中。 本論文采用常溫固相燒結(jié)法,自制不同A1摻雜濃度的AZO陶瓷靶材；采用射頻磁控濺射法,通過改變沉積工藝參數(shù),制備不同性能的AZO薄膜樣品；研究分析了不同參數(shù)對AZO薄膜結(jié)構(gòu)和性能的影響,提出最佳工藝條件。結(jié)論如下： 1)不同工藝條件下均得到了呈現(xiàn)較強(002)衍射峰的AZO薄膜；濺射功率為150 W以下時,隨著功率的提高,薄膜的結(jié)晶性越來越好,電阻率呈下降趨勢；隨著工作壓強的降低,(002)衍射峰越來越強,電阻率越來越小,0.4 Pa時結(jié)晶效果最佳；隨著薄膜厚度的增加,電阻率逐漸減小,可見光區(qū)透過率有所下降。 2)基底為室溫時所得AZO薄膜的結(jié)晶性良好,導(dǎo)電性和透光性也較佳；隨著基底溫度的提高,薄膜晶粒變大,結(jié)晶程度有所提高；電阻率較大幅度下降。 3)不同Al摻雜濃度的AZO薄膜均呈六方纖鋅礦結(jié)構(gòu),且隨著Al濃度的提高,薄膜的導(dǎo)電性有所下降,2at%摻雜濃度的AZO樣品效果最好。 4)在空氣中,不同溫度、不同時間退火后,AZO樣品的結(jié)晶性和導(dǎo)電性并未提高,但可見光區(qū)透過率有所增加。
[Abstract]:In recent years, the transparent conductive film has become one of the liquid crystal display, touch panel, solar cells and other key materials, people pay more and more attention. With the commercialization of LCD, color, scale and improve solar energy conversion efficiency requirements, the transparent conductive film are increasingly high requirements. Must meet the following conditions: low resistivity; high transmittance; coating temperature close to room temperature; excellent thermal stability and excellent heat resistance; alkali resistance; high hardness; good surface; and good adhesion to the substrate; large area uniform coating; low price.
The study found that Zinc Oxide aluminum doped (AZO) films have the same photoelectric properties of ITO thin films can be compared, and good chemical stability in plasma, Zinc Oxide and aluminum rich material sources, low price, almost non-toxic, has gradually become a new research hotspot of compound semiconductor materials, ITO film to replace the present trend, gradually applied to many areas.
This paper adopts room temperature solid-phase sintering, self-made AZO ceramic targets with different A1 doping concentration; by RF magnetron sputtering, by changing the deposition parameters of AZO thin film samples were prepared with different properties; research and analysis of the effects of different parameters on the structure and properties of AZO thin films, the optimum conditions are as follows:
1) under different process conditions have been showing a strong (002) AZO thin film diffraction peak; the sputtering power is below 150 W, with the increase of power, the crystallinity of the thin film is getting better and better, the resistivity decreased with the decrease of working pressure; and (002) diffraction peak is more and more strong, more and more small resistivity 0.4 Pa, the best crystallization effect; with the increase of film thickness, the resistivity decreases, visible transmittance decreased.
2) when the substrate is at room temperature, the AZO film has good crystallinity, good conductivity and transparency. With the increase of substrate temperature, the grain size of the thin film increases and the degree of crystallinity increases, and the resistivity decreases.
3) the AZO films with different Al doping concentrations all exhibited the six wurtzite structure. With the increase of Al concentration, the conductivity of the films decreased, and the 2at% doped AZO samples had the best effect.
4) in the air, the crystallinity and conductivity of AZO samples did not increase after annealing at different temperatures and at different time, but the transmittance of the visible light area was increased.

【學(xué)位授予單位】：暨南大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2011
【分類號】：O484.1

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