本文關(guān)鍵詞： 銅銦硒 銅銦硫 硅納米線 光致發(fā)光 表面增強(qiáng)拉曼散射　出處：《清華大學(xué)》2011年博士論文　論文類型：學(xué)位論文

【摘要】：本論文采用電化學(xué)沉積、化學(xué)液相沉積、金屬催化化學(xué)腐蝕和置換反應(yīng)沉積等四種濕化學(xué)的方法，分別研究了黃銅礦相薄膜太陽電池吸收層材料、硅納米線薄膜和表面增強(qiáng)拉曼散射基底薄膜等三種薄膜材料的制備，并研究了薄膜的結(jié)構(gòu)及其光吸收、光致發(fā)光和表面增強(qiáng)拉曼散射等性能。 黃銅礦相薄膜材料及其同族元素取代化合物是上個世紀(jì)80年代發(fā)展起來的新型薄膜太陽電池吸收層材料，被認(rèn)為是目前最有希望的薄膜太陽電池材料之一。本文分別采用一步電化學(xué)沉積和一步化學(xué)液相沉積的方法制備CuInSe_2(CISe)和CuInS_2(CIS)前驅(qū)薄膜，采用真空退火的后處理方法替代有毒Se化或S化工藝，得到了黃銅礦結(jié)構(gòu)的CISe和CIS薄膜；采用Zn擴(kuò)散摻雜的方法在CISe薄膜表面上直接形成準(zhǔn)同質(zhì)p-n結(jié)，從而可以簡化CISe薄膜電池的結(jié)構(gòu)、用于制備無鎘CISe薄膜太陽電池。 一維納米材料由于具有獨特的結(jié)構(gòu)和電學(xué)、光學(xué)、力學(xué)等特性引起了人們的極大興趣。本文采用金屬催化化學(xué)腐蝕的方法，在硅基底上制備了多孔硅納米線薄膜，研究了腐蝕溶液H_2O_2的濃度和腐蝕時間對納米線的長度、納米孔的密度和發(fā)光性能的影響；研究了多孔硅納米線的結(jié)構(gòu)和表面化學(xué)狀態(tài)，以及HNO3處理對多孔硅納米線的成分、化學(xué)狀態(tài)和發(fā)光性能的影響，探討了多孔硅納米線的形成機(jī)制和發(fā)光機(jī)制。通過把一維的硅納米線結(jié)構(gòu)與具有發(fā)光性能的多孔硅結(jié)構(gòu)結(jié)合起來，為硅基光電子和光電化學(xué)器件的發(fā)展提供了新的發(fā)展空間。 3D納米表面增強(qiáng)拉曼散射(SERS)基底材料由于其具有較強(qiáng)的拉曼增強(qiáng)系數(shù)和良好的重復(fù)性、穩(wěn)定性而引起了廣泛關(guān)注。本文采用NH4F-AgNO_3溶液體系制備了包覆Ag納米顆粒的硅納米線陣列薄膜，作為SERS基底其對羅丹明6G分子的拉曼增強(qiáng)系數(shù)達(dá)1.4105。利用濕態(tài)置換反應(yīng)的原理在Cu片基底上制備具有三次枝晶臂結(jié)構(gòu)的Ag樹枝晶薄膜，，作為SERS基底對羅丹明6G分子的拉曼增強(qiáng)系數(shù)可達(dá)2.9107。濕化學(xué)法制備的這兩種薄膜材料作為SERS基底對于定量檢測痕量物質(zhì)，以及檢測的可重復(fù)性和標(biāo)準(zhǔn)化具有重要意義。
[Abstract]:In this paper, four wet chemical methods, electrochemical deposition, chemical liquid deposition, metal catalyzed chemical corrosion and substitution reaction deposition, were used to study the absorption layer materials of chalcopyrite thin film solar cells. Silicon nanowire thin films and surface-enhanced Raman scattering substrates were prepared. The structure and optical absorption, photoluminescence and surface-enhanced Raman scattering properties of the films were investigated. Chalcopyrite thin film materials and their substituted compounds are new thin film solar cell absorbent layer materials developed in -20s. It is considered to be one of the most promising thin film solar cell materials at present. In this paper, CuInSe2CISeand Cuins\\\? CISe and CIS thin films with chalcopyrite structure were obtained by vacuum annealing instead of toxic se or S process, and quasi-homogenous p-n junctions were formed on the surface of CISe films by Zn diffusion doping method. Thus, the structure of CISe thin film cell can be simplified and used to prepare cadmium free CISe thin film solar cell. One-dimensional nanomaterials have attracted great interest due to their unique structure, electrical, optical and mechanical properties. In this paper, porous silicon nanowire films were prepared on silicon substrates by metal catalyzed chemical etching. The effects of H _ 2O _ 2 concentration and corrosion time of corrosion solution on the length, density and luminescence properties of nanowires, the structure and surface chemical state of porous silicon nanowires and the composition of porous silicon nanowires treated with HNO3 were studied. The formation mechanism and luminescence mechanism of porous silicon nanowires are discussed by combining one-dimensional silicon nanowires with porous silicon structures with luminescent properties. It provides a new development space for the development of silicon based photoelectron and photoelectrochemical devices. 3D surface-enhanced Raman scattering (SERS) substrate material has strong Raman enhancement coefficient and good repeatability. In this paper, silicon nanowire array films coated with Ag nanoparticles were prepared by using NH4F-AgNO_3 solution system. The Raman enhancement coefficient of Rhodamine 6G molecule on SERS substrate was 1.4105. The Ag dendritic thin films with cubic dendritic arm structure were prepared on Cu substrates using the principle of wet displacement reaction. The Raman enhancement coefficient of Rhodamine 6G molecule on SERS substrate can reach 2.9107. The two kinds of thin film materials prepared by wet chemical method are important for quantitative determination of trace substances, reproducibility and standardization of detection.
【學(xué)位授予單位】：清華大學(xué)
【學(xué)位級別】：博士
【學(xué)位授予年份】：2011
【分類號】：TB383.2

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

1 席珍強(qiáng),楊德仁,吳丹,張輝,陳君,李先杭,黃笑容,蔣敏,闕端麟;單晶硅太陽電池的表面織構(gòu)化[J];太陽能學(xué)報;2002年03期

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