本文關(guān)鍵詞： 石墨烯 化學(xué)氣相沉積(CVD) 表征 單層 大面積　出處：《微納電子技術(shù)》2017年03期 　論文類型：期刊論文

【摘要】：作為碳原子家族的最新成員,二維結(jié)構(gòu)的石墨烯具備優(yōu)異的物理化學(xué)性質(zhì)和廣闊的應(yīng)用前景,成為新材料研究領(lǐng)域的熱點(diǎn)研究對象。對化學(xué)氣相沉積(CVD)法進(jìn)行了優(yōu)化,成功制備得到了高質(zhì)量的單層石墨烯。優(yōu)化后的實(shí)驗(yàn)工藝為:首先對銅箔進(jìn)行化學(xué)拋光和退火預(yù)處理;然后將預(yù)處理后的銅箔加工成荷包狀;氫氣(H2)氛圍下,以甲烷(CH4)為碳源,對石墨烯進(jìn)行化學(xué)氣相沉積;當(dāng)甲烷和氫氣體積流量分別為10 cm3/min和20 cm3/min時,在1 030℃條件下生長20 min制備得到最終樣品。掃描電子顯微鏡(SEM)和激光喇曼光譜表征的結(jié)果顯示:該方法制備的樣品為大面積連續(xù)的單層石墨烯。
[Abstract]:As the newest member of the carbon atom family, graphene with two-dimensional structure has excellent physical and chemical properties and broad application prospects, and has become a hot research object in the field of new materials. The chemical vapor deposition (CVD) method has been optimized. A high quality graphene monolayer was successfully prepared. The optimized experimental process was as follows: first, the copper foil was chemically polished and annealed; then the pretreated copper foil was processed into a pocket shape; and the methane CH4) was used as the carbon source in the atmosphere of H _ 2H _ 2. Graphene was deposited by chemical vapor deposition, when the volume flow rate of methane and hydrogen was 10 cm3/min and 20 cm3/min, respectively. The final sample was prepared at 1 030 鈩，

本文編號：1512448