本文關鍵詞：CMOS溫度傳感器的研究與設計　出處：《東南大學》2017年碩士論文　論文類型：學位論文

  更多相關文章： CMOS溫度傳感器 寄生雙極型晶體管 斬波 動態(tài)匹配 Σ-△ADC

【摘要】：溫度傳感器在醫(yī)療設備、消費性電子和工業(yè)控制等領域都不可或缺。相比于傳統(tǒng)的溫度傳感器,集成的CMOS溫度傳感器體積更小、功耗更低、易于集成且可以直接與數字系統(tǒng)相連,其應用前景將更加廣泛。本文設計的CMOS溫度傳感器采用TSMC 65nm LP CMOS工藝,基于偏置在不同電流密度下的兩個雙極型晶體管的基極-射極電壓差△VBE與絕對溫度成正比的特性,利用模數轉換器將該電壓差進行精確量化,最終得到溫度的數字輸出。本文分析了 CMOS工藝下寄生雙極型晶體管的溫度特性,并對溫度傳感器中的各種非理想因素造成的誤差進行了詳細的討論,其中包括|VBE|的非線性、有限電流增益片和各種失調(包括運放的失調、電流鏡的失配等)等所引起的誤差,并給出了相應的解決方案。針對有限電流增益β采用了電流偏置電路,針對運放的失調采用了斬波技術,針對電流鏡的失配采用了動態(tài)匹配技術等。由于在實際應用中,對溫度測量的速度要求較低,而對精度要求較高,本文采用12位一階Σ-△ADC來進行量化工作;Σ-△ADC中的積分器采用了帶增益提高技術的兩級運放,仿真結果顯示,其低頻增益達到108dB。整個電路芯片面積為0.588mm×0.536mm,后仿真結果表明:當電源電壓為1.2V,輸入參考時鐘為400kHz時,在TT工藝角下,芯片總體功耗為1.25mW,溫度誤差在0℃到60℃的測溫范圍內達到了±0.47℃;在SS和FF工藝角下,溫度誤差在0℃到60℃的測溫范圍內小于±1.46℃。
[Abstract]:Temperature sensors are indispensable in medical devices, consumer electronics and industrial control. Compared with traditional temperature sensors, integrated CMOS temperature sensors are smaller in size and lower in power consumption. It is easy to integrate and can be directly connected with digital system, and its application prospect will be more extensive. The CMOS temperature sensor designed in this paper adopts TSMC 65nm LP CMOS process. Based on the characteristic that the base-emitter voltage difference (VBE) of two bipolar transistors with bias at different current density is proportional to the absolute temperature, the voltage difference is accurately quantized by A / D converter. Finally, the digital output of temperature is obtained. The temperature characteristics of parasitic bipolar transistor in CMOS process are analyzed, and the error caused by various non-ideal factors in temperature sensor is discussed in detail. It includes the nonlinearity of VBE, the error caused by finite current gain plate and various misalignment (including the mismatch of current mirror and so on). The current bias circuit is used for finite current gain 尾 and chopping technology is used for the misalignment of operational amplifier. The dynamic matching technology is used for the mismatch of the current mirror. Because in the practical application, the speed of the temperature measurement is lower, but the precision is higher. In this paper, 12-bit first order 危-ADC is used for quantization. The integrator in 危-ADC adopts two-stage operational amplifier with gain enhancement technique. The simulation results show that. The low frequency gain reaches 108 dB and the whole chip area is 0.588mm 脳 0.536mm. The simulation results show that when the voltage of power supply is 1.2V. When the input reference clock is 400kHz, the overall power consumption of the chip is 1.25 MW at the TT processing angle, and the temperature error is 鹵0.47 鈩，

本文編號：1378480