Electron trapping properties at the HfO₂/SiO₂ interface have been measured through Kelvin Probe force microscopy,between room temperature and 90 ℃.The electron diffusion in HfO₂ shows a multiple-step process.After injection,electrons diffuse quickly toward the HfO₂/SiO₂ interface and then diffuse laterally near the interface in two sub-steps:The first is a fast diffusion through shallow trap centers and the second is a slow diffusion through...

【文章頁數(shù)】：4 頁


本文編號：3857595