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封裝粘接層空洞對(duì)微加速度計(jì)溫漂的影響

發(fā)布時(shí)間:2019-01-21 09:13
【摘要】:叉指式微加速度計(jì)的應(yīng)用領(lǐng)域涉及到娛樂生活、國(guó)防事業(yè)等方面,是微傳感器中重要的研究對(duì)象之一。在其使用過程中,由于環(huán)境溫度變化引起的輸出漂移現(xiàn)象是影響微加速度計(jì)的測(cè)試精度的主要因素之一。溫漂的產(chǎn)生是由于微加速度計(jì)封裝結(jié)構(gòu)在環(huán)境溫度變化時(shí)發(fā)生了變形,粘接層空洞是造成這種變形的主要因素之一。隨著對(duì)微加速度計(jì)精度要求越來越高,由粘接層空洞引起封裝結(jié)構(gòu)的變形對(duì)輸出溫漂的影響不可忽略。目前,國(guó)內(nèi)外關(guān)于粘接層空洞的研究主要分析空洞對(duì)封裝結(jié)構(gòu)熱學(xué)方面的影響,封裝結(jié)構(gòu)變形或輸出溫漂受空洞影響的研究很少。因此,為了提高微加速度計(jì)的測(cè)試精度,有必要分析封裝粘接層空洞對(duì)微加速度計(jì)溫漂的影響。本文將封裝粘接層空洞對(duì)微加速度計(jì)溫漂的影響分解為兩個(gè)步驟進(jìn)行研究,首先分析粘接層空洞對(duì)封裝結(jié)構(gòu)的影響,在此基礎(chǔ)上分析封裝結(jié)構(gòu)對(duì)微加速度計(jì)溫漂的影響。主要內(nèi)容有:1.分析粘接層空洞對(duì)封裝結(jié)構(gòu)的影響,該過程中同時(shí)采用理論與仿真進(jìn)行計(jì)算。仿真的封裝結(jié)構(gòu)模型在ANSYS有限元軟件中建立,粘接層空洞的結(jié)構(gòu)使用“生死單元”技術(shù)生成。理論計(jì)算采用結(jié)構(gòu)分析理論進(jìn)行封裝結(jié)構(gòu)的分析,并使用微分方程的標(biāo)準(zhǔn)求解法進(jìn)行求解。比較仿真與理論計(jì)算所得的界面切應(yīng)力可知,在粘接層不帶空洞和帶空洞的情況下,仿真模型都可以準(zhǔn)確計(jì)算出封裝結(jié)構(gòu)冷卻變形后的情形。2.分析封裝結(jié)構(gòu)變形對(duì)微加速度計(jì)輸出溫漂的影響,該過程也同時(shí)采用理論與仿真進(jìn)行計(jì)算,利用冷卻變形后微加速度計(jì)錨點(diǎn)在敏感方向上的位移求出輸出溫漂。比較理論計(jì)算與仿真計(jì)算所得的數(shù)據(jù)可知,兩種計(jì)算方法都可以通過錨點(diǎn)的位移準(zhǔn)確計(jì)算出微加速度計(jì)輸出溫漂。另外,分析錨點(diǎn)在非敏感方向上的位移對(duì)微加速度計(jì)輸出溫漂的影響可知,非敏感方向的影響很小,可忽略不計(jì)。3.在前面兩部分研究的基礎(chǔ)上,分析粘接層空洞對(duì)微加速度計(jì)輸出溫漂的影響。粘接層空洞與粘接層中心的距離的增大會(huì)使得輸出溫漂呈現(xiàn)上升-下降-上升的變化趨勢(shì),粘接層空洞的增大會(huì)使得輸出溫漂持續(xù)增大,而粘接層中兩個(gè)空洞共同作用時(shí)的輸出溫漂近似等于該兩空洞單獨(dú)作用時(shí)輸出溫漂的累加和。
[Abstract]:The application of cross-finger micro-accelerometer is one of the most important research objects in micro-sensor, which involves entertainment, national defense and so on. The output drift caused by the change of ambient temperature is one of the main factors that affect the measuring accuracy of microaccelerometer. The temperature drift is caused by the deformation of the microaccelerometer packaging structure when the ambient temperature changes. The bonding layer cavity is one of the main factors causing the deformation. As the precision of micro-accelerometers is higher and higher, the effect of the deformation of the packaging structure caused by the cavity in the bonding layer on the output temperature drift can not be ignored. At present, at home and abroad, the effect of the cavity on the thermal properties of the packaging structure is mainly analyzed, and the effect of the cavity on the deformation of the package structure or the output temperature drift is seldom studied. Therefore, in order to improve the precision of microaccelerometer, it is necessary to analyze the effect of the cavity in the package bonding layer on the temperature drift of the micro-accelerometer. In this paper, the effect of bonding layer cavity on temperature drift of microaccelerometer is divided into two steps. Firstly, the effect of bonding layer cavity on package structure is analyzed, and then the effect of package structure on temperature drift of micro-accelerometer is analyzed. The main contents are: 1. The influence of bonding layer cavity on the package structure is analyzed, and the theory and simulation are used in the process. The simulated encapsulation structure model is established in the ANSYS finite element software, and the cavity structure of the bonding layer is generated by the "birth and death element" technique. The structure analysis theory is used to analyze the package structure, and the standard solution method of differential equation is used to solve the problem. By comparing the interfacial shear stress obtained by simulation and theoretical calculation, it can be seen that the simulation model can accurately calculate the cooling deformation of the packaging structure without the cavity and the cavity in the bonding layer. 2. The effect of package structure deformation on the temperature drift of microaccelerometer output is analyzed. At the same time, the temperature drift of micro-accelerometer output is obtained by using the displacement of anchor point of micro-accelerometer in sensitive direction after cooling deformation. Compared with the data obtained by theoretical calculation and simulation calculation, both methods can accurately calculate the output temperature drift of the micro-accelerometer by the displacement of the anchor point. In addition, the influence of the displacement of anchor point on the temperature drift of the micro-accelerometer output in the non-sensitive direction is analyzed. The influence of the non-sensitive direction on the output temperature drift of the micro-accelerometer is very small and negligible. On the basis of the first two parts, the effect of bonding layer cavity on the temperature drift of micro accelerometer output is analyzed. The increase of the distance between the cavity of the bonding layer and the center of the bonding layer will make the output temperature drift show a trend of rising, descending and rising, and the increase of the cavity in the adhesive layer will make the output temperature drift increase continuously. The output temperature drift is approximately equal to the sum of the output temperature drift when the two voids act alone in the bonding layer.
【學(xué)位授予單位】:電子科技大學(xué)
【學(xué)位級(jí)別】:碩士
【學(xué)位授予年份】:2016
【分類號(hào)】:TH824.4

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