【摘要】：硅微機(jī)械加速度計(jì)是MEMS(Micro Mechanical System)傳感器的研究熱點(diǎn)之一,具有體積小、成本低、易于批量生產(chǎn)等優(yōu)點(diǎn)。與其它類型的MEMS加速度傳感器相比,硅微機(jī)械諧振式加速度傳感器測(cè)量精度高,輸出的是頻率信號(hào),可以通過簡(jiǎn)單的數(shù)字電路送入計(jì)算機(jī),而不需A/D轉(zhuǎn)換環(huán)節(jié),因此,研究諧振式硅微加速度傳感器具有重要意義。本文所設(shè)計(jì)的基于掩膜-無掩膜腐蝕技術(shù)的新型硅微諧振式加速度傳感器,諧振梁位于襯底上表面,支撐梁的中性面與質(zhì)量塊的重心在同一平面,支撐梁與諧振梁同時(shí)成形。相比之前文獻(xiàn)中報(bào)道的Z軸諧振式加速度傳感器,簡(jiǎn)化了器件結(jié)構(gòu),降低了封裝難度,并且能有有效消除面內(nèi)加速度引起的交叉軸耦合干擾。為了實(shí)現(xiàn)本課題所設(shè)計(jì)的器件結(jié)構(gòu),采用掩膜-無掩膜兩步腐蝕法腐蝕出位于不同平面的諧振梁和支撐梁,其中諧振梁位于襯底上表面,支撐梁的中性面與質(zhì)量塊的重心在同一平面。并且針對(duì)不同腐蝕液及其添加劑做了大量的實(shí)驗(yàn),分析比較了不同腐蝕液及其添加劑對(duì)硅片的無掩膜腐蝕腐蝕特性,如硅片表面平整度,腐蝕速率,快腐蝕面與(100)面的腐蝕速率之比r3。經(jīng)過多組實(shí)驗(yàn)發(fā)現(xiàn)采用碘過飽和KOH溶液作為無掩膜腐蝕液的硅片具有良好的表面平整度和最小的r3值,而且其r3的離散性最小,具有良好的穩(wěn)定性和耐久性。簡(jiǎn)要介紹了諧振器的檢測(cè)盒激勵(lì)方式,諧振式硅微加速度傳感器的工作原理,對(duì)其力學(xué)敏感結(jié)構(gòu)進(jìn)行了理論分析并根據(jù)器件的結(jié)構(gòu)設(shè)計(jì)了一套完整的工藝流程。重點(diǎn)研究了二氧化硅/氮化硅薄膜的制備與殘余應(yīng)力測(cè)量以及諧振梁的應(yīng)力補(bǔ)償;針對(duì)質(zhì)量塊在碘過飽和KOH溶液無掩膜腐蝕過程中會(huì)受到的切削,為其設(shè)計(jì)了補(bǔ)償圖形,并由實(shí)驗(yàn)驗(yàn)證可行;對(duì)電阻及引線的選取與制備進(jìn)行了分析與介紹。
[Abstract]:Silicon micromechanical accelerometer is one of the research hotspots in MEMS (Micro Mechanical System) sensor, which has the advantages of small volume, low cost and easy mass production. Compared with other types of MEMS accelerometers, silicon micromechanical resonant accelerometers have high measurement accuracy and output frequency signals, which can be sent to the computer through simple digital circuits without the need for A- / D conversion. It is of great significance to study the resonant silicon micro acceleration sensor. A novel silicon micro-resonant accelerometer based on masking and non-mask corrosion technique is designed in this paper. The resonant beam is located on the surface of the substrate, the neutral surface of the supporting beam is in the same plane as the center of mass of the mass block, and the supporting beam and the resonant beam are formed at the same time. Compared with the Z-axis resonant accelerometer reported in previous literature, it simplifies the device structure, reduces the difficulty of packaging, and can effectively eliminate the cross-axial coupling interference caused by in-plane acceleration. In order to realize the device structure designed in this paper, the resonant beam and the supporting beam located in different planes are corroded by the masking and non-mask two-step corrosion method, in which the resonant beam is located on the surface of the substrate. The neutral plane of the supporting beam is in the same plane as the center of gravity of the mass block. A large number of experiments have been done on different corrosion fluids and their additives. The corrosion characteristics of different corrosion fluids and their additives to silicon wafer without mask have been analyzed and compared, such as the surface smoothness, corrosion rate of silicon wafer. The ratio of the corrosion rate of the fast corrosion surface to the (100) surface is R3. It is found that the silicon wafer with iodine supersaturated KOH solution as non-mask corrosion solution has good surface smoothness and minimum r3 value, and the dispersion of R3 is the least, and it has good stability and durability. This paper briefly introduces the excitation mode of the resonator and the working principle of the resonant silicon micro-acceleration sensor. The mechanical sensitive structure of the resonator is analyzed theoretically and a set of complete technological process is designed according to the structure of the device. The fabrication and residual stress measurement of silicon dioxide / silicon nitride film and the stress compensation of resonant beam are studied emphatically, and the compensation pattern is designed for the mass block which will be cut in iodine supersaturated KOH solution without mask corrosion. The selection and preparation of resistance and lead are analyzed and introduced.
【學(xué)位授予單位】：中國(guó)計(jì)量學(xué)院
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TH824.4

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