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MEMS中高阻硅基底微小結(jié)構(gòu)制造誤差的反演規(guī)律研究

發(fā)布時間:2018-08-31 14:32
【摘要】:微小結(jié)構(gòu)加工技術(shù)制造的微帶貼片天線,具有剖面低、體積小、重量輕、高度集成、并且能與載體共形。其作為對彈藥的智能化改造的通信節(jié)點,可提高彈藥打擊目標(biāo)的精確度,基于高阻硅基底的微小結(jié)構(gòu)貼片天線損耗小,容易組陣,很大程度提高了天線的功率、增益等。目前,微小結(jié)構(gòu)內(nèi)部尺寸的測量還屬于瓶頸技術(shù)。為解決微小結(jié)構(gòu)天線尺寸測量難的問題,本文探索了基于高阻硅基底C/X/Ku波段微小結(jié)構(gòu)陣列式微帶貼片天線的結(jié)構(gòu)尺寸與電性能之間的反演規(guī)律,主要工作如下:1.C/X/Ku波段天線的基本設(shè)計與仿真。本課題主要以三個不同波段的微帶天線作為研究對象,在進行反演規(guī)律分析前先要通過設(shè)計仿真,將三個不同波段天線的電性能調(diào)整到最優(yōu)點。2.C/X/Ku波段天線結(jié)構(gòu)尺寸誤差與電性能之間反演規(guī)律的研究。在天線加工制造過程中,不可避免的產(chǎn)生加工尺寸誤差,這些誤差會影響到天線的電性能如:輻射增益、電壓駐波比、回波損耗系數(shù)、輻射效率等。采用仿真軟件,模擬不同波段天線的電性能和幾何尺寸變化之間的對應(yīng)關(guān)系。3.確定天線關(guān)鍵制造誤差尺寸和誤差允許的最大值。通過電性能和天線幾何尺寸之間的關(guān)系,找出導(dǎo)致天線電性能變化最敏感甚至失效的關(guān)鍵制造誤差尺寸和關(guān)鍵誤差尺寸允許誤差的大小,建立關(guān)鍵誤差尺寸和天線電性能之間的函數(shù)關(guān)系式。并且將關(guān)鍵誤差尺寸的值在加工過程中提供誤差參考數(shù)據(jù)。4.MEMS加工工藝的研究。參照反演規(guī)律結(jié)論,深入研究了MEMS中的刻蝕工藝、濺射與電鍍復(fù)合工藝、高阻硅切割工藝、微小結(jié)構(gòu)的封裝工藝,突破了工藝難點,制造出C/X/Ku波段微帶天線樣品。5.微帶天線電性能的測試。通過在微波暗室內(nèi)對制造出的天線進行電性能測試,用測試結(jié)果驗證反演規(guī)律,并利用反演規(guī)律結(jié)論得到天線樣品的誤差關(guān)鍵尺寸的實際值。
[Abstract]:The microstrip patch antenna fabricated by micro-structure machining technology has the advantages of low profile, small volume, light weight, high integration, and conformal with the carrier. As an intelligent communication node of ammunition, it can improve the precision of ammunition hitting target. The micro-structure patch antenna based on high resistance silicon substrate has low loss and easy to group array, which greatly improves the power and gain of antenna. At present, the measurement of the internal dimensions of micro structures is still a bottleneck technology. In order to solve the problem of the measurement of the microstructural antenna size, the inversion law between the structure size and the electrical performance of the microstrip patch antenna based on the C/X/Ku band microstrip patch antenna with high resistance silicon substrate is explored in this paper. The main work is as follows: 1. The basic design and simulation of the X / Ku band antenna. This topic mainly takes three different band microstrip antennas as the research object, before carrying on the inversion law analysis, must first design the simulation, The electrical performance of three antennas in different bands is adjusted to the best. 2. The inversion law between the structure dimension error and the electrical performance of the antenna in the X / Ku band of C / R / X / Ku band is studied. In the process of antenna manufacturing, machining dimension errors will inevitably occur, which will affect the antenna electrical performance such as radiation gain, voltage standing wave ratio, echo loss coefficient, radiation efficiency and so on. Simulation software is used to simulate the corresponding relation between the electrical performance and geometric size of antenna in different bands. Determine the antenna key manufacturing error size and the maximum allowable error. According to the relationship between electrical performance and antenna geometry size, the critical manufacturing error size and the allowable error size of critical error size which lead to the most sensitive or even invalid electrical performance of antenna are found out. The functional relationship between the key error size and the electrical performance of the antenna is established. The value of key error dimension is used to provide error reference data during machining. 4. Research on MEMS machining process. Referring to the conclusion of inversion rule, the etching process, sputtering and electroplating technology, high resistance silicon cutting technology and encapsulation technology of micro structure in MEMS are studied in depth. The microstrip antenna sample of C/X/Ku band has been fabricated. Measurement of electrical properties of microstrip antennas. By testing the electrical performance of the antenna in the microwave darkroom, the inversion law is verified by the test results, and the actual value of the key error size of the antenna sample is obtained by the conclusion of the inversion rule.
【學(xué)位授予單位】:電子科技大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2014
【分類號】:TN822

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1 張樂平;水玉洋;;應(yīng)用于集成電路制造的電鍍金工藝控制[J];電子工業(yè)專用設(shè)備;2010年03期

2 楊光;金榮洪;耿軍平;;微帶天線陣列的一種新穎饋電網(wǎng)絡(luò)[J];中國電子科學(xué)研究院學(xué)報;2009年02期

相關(guān)碩士學(xué)位論文 前2條

1 韓冰;雙極化微帶天線的研究與設(shè)計[D];南京理工大學(xué);2007年

2 趙學(xué);C波段陣列式微帶天線在智能彈藥引導(dǎo)系統(tǒng)中應(yīng)用研究[D];電子科技大學(xué);2013年

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