超寬帶接收機射頻前端電路設計
發(fā)布時間：2018-08-04 21:34
【摘要】：無線通信是以高速、可靠、便捷的特性贏得了人們的關注,而超寬帶系統(tǒng)在此基礎上更是以寬頻帶、更高速、低功耗的優(yōu)勢成為了近幾年研究者先后研究的對象,超寬帶技術是一種新型的短距離無線通信技術,對通信行業(yè)未來的發(fā)展有巨大的意義。近年來,隨著CMOS工藝截止頻率不斷提高,同時憑借其低成本且能夠與數字電路大規(guī)模集成的特點,采用CMOS工藝完成接收機射頻前端與基帶數字部分大規(guī)模集成將成為可能,達到實現單芯片接收機的目的。 射頻前端是天線與基帶信號的連接口,隨著無線通信系統(tǒng)的迅速發(fā)展,也給射頻接收前端的芯片設計帶來了巨大的挑戰(zhàn)。射頻前端中包含低噪聲放大器與混頻器兩個模塊,它們的主要作用是檢測出射頻頻段的微弱信號將其放大并且將射頻信號搬移到中頻頻段。這兩個模塊的性能好壞直接影響著整個接收系統(tǒng)的靈敏度,即接收系統(tǒng)能否接收到最小的信號幅度。因此需要對接收機的射頻前端低噪聲放大器與混頻器進行合理的設計。 本文設計了兩種工作在3GHz-5GHz頻帶內基于CMOS工藝的超寬帶低噪聲放大器電路,分別為LC匹配的超寬帶LNA和低復雜度的超寬帶LNA。LC匹配的超寬帶LNA基于LC網絡為輸入匹配,改設計采用二階巴特沃斯帶通濾波器,以共源共柵結構為放大電路。該電路可實現在保證較高增益條件下噪聲系數為1.1-1.6dB的指標,在1.8V恒定供電電壓下,電路功耗為13.2mW。低復雜度超寬帶LNA電路具有很強的可靠性,采用單端轉差分Balun電路結構,電路中減小了電感的使用,進而減小了芯片設計面積,同時電路充分考慮到了外圍電路對LNA的影響。在1.8V供電電壓下功耗為12.5mW。 本文在經典Gilbert結構的基礎上加入電流注入方法設計了一個工作頻帶為3GHz-5GHz范圍內的雙平衡混頻器電路。對射頻輸入端口、本振端口進行了阻抗匹配,負載電路采用電阻與電容并聯的方式。在1.2V供電電壓下,混頻器的功耗為6.9mW,在轉換增益、功耗及噪聲系數方面都有良好的性能。
[Abstract]:Wireless communication has attracted people's attention because of its high speed, reliability and convenience. On the basis of this, UWB system has become the research object of researchers in recent years because of its advantages of wide band, higher speed and lower power consumption. Ultra-wideband (UWB) technology is a new type of short-range wireless communication technology, which has great significance for the future development of communication industry. In recent years, with the incessant improvement of the cut-off frequency of CMOS process, and because of its low cost and large scale integration with digital circuits, it is possible to complete the large-scale integration of RF front-end and baseband digital part of receiver by using CMOS process. To achieve the purpose of single chip receiver. RF front-end is the connection between antenna and baseband signal. With the rapid development of wireless communication system, RF front-end chip design has brought great challenges. There are two modules in the RF front end, low noise amplifier and mixer. Their main function is to detect the weak signal in the radio frequency band to amplify it and move the radio frequency signal to the intermediate frequency band. The performance of these two modules directly affects the sensitivity of the whole receiving system, that is, whether the receiving system can receive the minimum signal amplitude. Therefore, it is necessary to design RF front-end LNA and mixer reasonably. In this paper, two UWB LNA circuits based on CMOS technology in 3GHz-5GHz band are designed, which are LC matched UWB LNA and low complexity UWB LNA.LC matching UWB LNA based on LC network. The second order Butterworth band-pass filter is adopted, and the common source common-grid structure is used as the amplifier circuit. This circuit can realize the index that the noise coefficient is 1.1-1.6dB under the condition of high gain. The power consumption of the circuit is 13.2 MW at 1.8 V constant power supply voltage. The ultra-wideband LNA circuit with low complexity has strong reliability. The single-end to differential Balun circuit structure is adopted, which reduces the use of inductor, and then reduces the design area of the chip. At the same time, the influence of peripheral circuits on LNA is fully taken into account in the circuit. The power consumption is 12.5 MW at 1.8 V supply voltage. In this paper, based on the classical Gilbert structure, a dual balanced mixer with a working frequency band of 3GHz-5GHz is designed by adding the current injection method. The impedance matching of RF input port and local oscillator port is carried out. The load circuit adopts the mode of parallel connection of resistor and capacitance. The power consumption of the mixer is 6.9 MW at 1.2V supply voltage, which has good performance in conversion gain, power consumption and noise coefficient.
【學位授予單位】：廣西大學
【學位級別】：碩士
【學位授予年份】：2014
【分類號】：TN851
本文編號：2165234
[Abstract]:Wireless communication has attracted people's attention because of its high speed, reliability and convenience. On the basis of this, UWB system has become the research object of researchers in recent years because of its advantages of wide band, higher speed and lower power consumption. Ultra-wideband (UWB) technology is a new type of short-range wireless communication technology, which has great significance for the future development of communication industry. In recent years, with the incessant improvement of the cut-off frequency of CMOS process, and because of its low cost and large scale integration with digital circuits, it is possible to complete the large-scale integration of RF front-end and baseband digital part of receiver by using CMOS process. To achieve the purpose of single chip receiver. RF front-end is the connection between antenna and baseband signal. With the rapid development of wireless communication system, RF front-end chip design has brought great challenges. There are two modules in the RF front end, low noise amplifier and mixer. Their main function is to detect the weak signal in the radio frequency band to amplify it and move the radio frequency signal to the intermediate frequency band. The performance of these two modules directly affects the sensitivity of the whole receiving system, that is, whether the receiving system can receive the minimum signal amplitude. Therefore, it is necessary to design RF front-end LNA and mixer reasonably. In this paper, two UWB LNA circuits based on CMOS technology in 3GHz-5GHz band are designed, which are LC matched UWB LNA and low complexity UWB LNA.LC matching UWB LNA based on LC network. The second order Butterworth band-pass filter is adopted, and the common source common-grid structure is used as the amplifier circuit. This circuit can realize the index that the noise coefficient is 1.1-1.6dB under the condition of high gain. The power consumption of the circuit is 13.2 MW at 1.8 V constant power supply voltage. The ultra-wideband LNA circuit with low complexity has strong reliability. The single-end to differential Balun circuit structure is adopted, which reduces the use of inductor, and then reduces the design area of the chip. At the same time, the influence of peripheral circuits on LNA is fully taken into account in the circuit. The power consumption is 12.5 MW at 1.8 V supply voltage. In this paper, based on the classical Gilbert structure, a dual balanced mixer with a working frequency band of 3GHz-5GHz is designed by adding the current injection method. The impedance matching of RF input port and local oscillator port is carried out. The load circuit adopts the mode of parallel connection of resistor and capacitance. The power consumption of the mixer is 6.9 MW at 1.2V supply voltage, which has good performance in conversion gain, power consumption and noise coefficient.
【學位授予單位】：廣西大學
【學位級別】：碩士
【學位授予年份】：2014
【分類號】：TN851
【參考文獻】
相關期刊論文 前5條
1 華明清;王志功;李智群;;0.18-μm CMOS3.1-10.6GHz超寬帶低噪聲放大器設計[J];電路與系統(tǒng)學報;2007年01期
2 何小威;李晉文;張民選;;1.5-6GHz增益和噪聲系數穩(wěn)定的兩級超寬帶CMOS低噪聲放大器設計與性能模擬[J];電子學報;2010年07期
3 桑澤華;李永明;;一種應用于超寬帶系統(tǒng)的寬帶LNA的設計[J];微電子學;2006年01期
4 吳岳婷;張潤曦;沈懌皓;陳元盈;周灝;賴宗聲;;433MHz ASK接收機射頻前端版圖設計[J];微電子學;2007年06期
5 張在琛,畢光國;超寬帶無線通信技術及其應用[J];移動通信;2004年Z1期
，本文編號：2165234
本文鏈接：http://sikaile.net/kejilunwen/wltx/2165234.html
最近更新
教材專著
