本文選題：TFT-LCD + Sand��； 參考：《液晶與顯示》2015年02期

【摘要】：在薄膜晶體管液晶顯示器件(TFT-LCD)的制作過程中,Mura是一種常見的不良現(xiàn)象,它可以直接影響到產(chǎn)品的畫面品質(zhì)。本文結(jié)合生產(chǎn)工藝的實際情況,采用宏觀微觀檢查設(shè)備Macro/Micro(M/M)、掃描電子顯微鏡(SEM)、聚焦離子束測試儀(FIB)等設(shè)備進(jìn)行檢測分析,研究了產(chǎn)品開發(fā)過程中出現(xiàn)的Sand Mura問題。實驗結(jié)果表明,Sand Mura發(fā)生的主要原因是像素電極ITO在刻蝕過程中由于過刻發(fā)生斷裂,導(dǎo)致在通電時該處液晶分子偏轉(zhuǎn)發(fā)生異常,進(jìn)而阻擋了光的透過而形成暗點(diǎn);通過變更ITO薄膜的厚度及刻蝕時間等一系列措施,防止了像素電極在PVX過孔處因過刻引起的斷裂,不良發(fā)生率降至0.3%,產(chǎn)品質(zhì)量得到了很大的提高。此外,過孔設(shè)計優(yōu)化方案有助于新產(chǎn)品開發(fā)階段避免該不良的發(fā)生,為以后相關(guān)問題的研究奠定了一些理論基礎(chǔ)。
[Abstract]:Mura is a common bad phenomenon in the fabrication of thin film transistor liquid crystal display (TFT-LCD). It can directly affect the picture quality of the product. In this paper, according to the actual conditions of the production process, the Sand Mura problems in the product development process are studied by means of macroscopical and microscopical inspection equipment Macro-Micromicro M / M, scanning electron microscope (SEM), focused ion beam tester (FIB) and so on. The experimental results show that the main reason for the occurrence of Sand Mura is that the ITO of the pixel electrode breaks during the etching process, which leads to the abnormal deflection of liquid crystal molecules when the electricity is switched on, thus blocking the transmission of light and forming dark spots. By changing the thickness and etching time of ITO film, a series of measures were taken to prevent the breakage caused by over-etching of the pixel electrode in the PVX hole, and the bad rate was reduced to 0.3%, and the product quality was greatly improved. In addition, the optimization scheme of perforation design is helpful to avoid this bad situation in the stage of new product development, which lays some theoretical foundation for the research of related problems in the future.
【作者單位】： 合肥京東方光電科技有限公司;
【分類號】：TN873.93
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本文編號：1896929