本文選題：光電子集成　切入點(diǎn)：光探測(cè)器　出處：《北京郵電大學(xué)》2014年博士論文

【摘要】：隨著光纖通信系統(tǒng)正逐步向集成化、智能化、低成本、高可靠性的新一代光網(wǎng)絡(luò)方向發(fā)展,對(duì)系統(tǒng)中的光電子和電子器件都提出了更高的要求。光電集成器件以其體積小、成本低、損耗低、性能穩(wěn)定的優(yōu)勢(shì)滿(mǎn)足了下一代光纖通信系統(tǒng)的發(fā)展需求。光接收端是構(gòu)建光纖通信系統(tǒng)的關(guān)鍵組成部分之一,因此對(duì)組成接收端的光電集成器件開(kāi)展相關(guān)研究具有極其重要的意義。硅基電子學(xué)器件以其工藝成熟、成本低廉、穩(wěn)定性高等優(yōu)勢(shì)得到了廣泛的應(yīng)用,III-V族有源光學(xué)器件則是光纖通信系統(tǒng)中的關(guān)鍵器件,如何發(fā)揮這兩類(lèi)器件各自特性的優(yōu)勢(shì),面臨著集成結(jié)構(gòu)、互聯(lián)技術(shù)、封裝工藝、工藝兼容性等諸多難題。因此研究光纖通信系統(tǒng)中接收端的光電集成結(jié)構(gòu)及工藝兼容性成為了發(fā)展高速光電子集成器件的熱點(diǎn)課題。 本論文圍繞光電集成器件的結(jié)構(gòu)及工藝兼容性問(wèn)題,開(kāi)展了對(duì)光纖通信系統(tǒng)中接收端光電集成器件的研究。論文主要的創(chuàng)新和研究成果如下： 1.設(shè)計(jì)了InP基長(zhǎng)波長(zhǎng)光探測(cè)器以及與CMOS集成電路集成的接收機(jī)前端。對(duì)InP基長(zhǎng)波長(zhǎng)光探測(cè)器的工作原理、頻率響應(yīng)特性、量子效率進(jìn)行了研究。分析了封裝參數(shù)對(duì)集成器件響應(yīng)特性的影響。研究了接收機(jī)前端金屬鍵合集成工藝兼容性的關(guān)鍵問(wèn)題。制備的光探測(cè)器在1550nm入光處具有0.95A/W的響應(yīng)度,3-dB頻率響應(yīng)帶寬為8.5GHz。在-5V偏壓時(shí),暗電流小于0.1nA,電容約為0.42pF。集成的接收機(jī)前端帶寬約為1.7GHz,接收機(jī)前端最高可實(shí)現(xiàn)3Gbps速率的信號(hào)傳輸。 2.進(jìn)一步研究了多通道接收組件的封裝及其光電集成兼容工藝,設(shè)計(jì)并制備了多通道陣列光電集成接收組件。理論上分析了蝶形封裝的設(shè)計(jì)對(duì)高速接收組件信號(hào)接收性能的影響。器件在1550nm入光下,制備的陣列光電集成接收組件的3-dB頻率響應(yīng)帶寬分別為5.33GHz和4.36GHz。進(jìn)一步改善外圍驅(qū)動(dòng)電路、封裝接口、測(cè)試板等特性,可以實(shí)現(xiàn)單通道10Gbps速率以上的信號(hào)接收。 3.提出并制備了一種基于能帶漸變、摻雜漸變的零偏壓光探測(cè)器(Zero BiasPD)。經(jīng)研究該結(jié)構(gòu)吸收層厚度為350nm時(shí),器件擁有最大帶寬效率積。器件在3.3V反偏壓下,1550nm入光處,測(cè)得量子效率為21.14%,響應(yīng)度為0.2638A/W。在反向偏壓分別為0V、3.3V時(shí),3-dB頻率響應(yīng)帶寬分別為12.27GHz、14.9GHz。測(cè)試結(jié)果表明光探測(cè)器在0V下的頻率響應(yīng)帶寬超過(guò)最大帶寬值的80%,滿(mǎn)足低功耗光纖通信系統(tǒng)的實(shí)際應(yīng)用。 4.從優(yōu)化合金電極的傳輸系數(shù)、特征阻抗出發(fā),研究了Pt/Ti/Pt/Au合金電極的信號(hào)傳輸特性。實(shí)現(xiàn)了電極材料在特定厚度下,傳輸系數(shù)S21參數(shù)及特征阻抗Zo的最優(yōu)方案,總體上降低了器件的RC延遲效應(yīng)。著重解決了光探測(cè)器在低頻段尤其是在10～200MHz頻段下,頻率響應(yīng)特性嚴(yán)重下跌的問(wèn)題。提出了對(duì)器件結(jié)構(gòu)及制備工藝的改進(jìn)方案,改進(jìn)了制備器件的刻蝕方法,精確了開(kāi)孔時(shí)間以及簡(jiǎn)化電極蒸鍍工序。同時(shí),新工藝的應(yīng)用有效的提高了器件的頻率響應(yīng)帶寬。 5.探討了一種基于InP/Si雙基復(fù)合襯底的光電子集成兼容工藝技術(shù)。研究了工業(yè)流水線上的晶圓清洗工序及鍵合技術(shù),對(duì)晶圓鍵合條件做了理論分析。以此為基礎(chǔ),制備了適用于高速光電子集成器件InP/Si雙基復(fù)合襯底。對(duì)制備的InP/Si雙基復(fù)合襯底做了掃描電鏡(SEM)、X射線衍射譜分析。探討了這種光電集成工藝對(duì)襯底晶片表面特性的影響,并對(duì)其在工業(yè)流水線上生產(chǎn)并制作光電子器件的可行性進(jìn)行了分析和討論。
[Abstract]:As the optical fiber communication system is gradually developing towards the new generation of optical networks with integrated , intelligent , low cost and high reliability , the advantages of the optoelectronic integrated device in the development of the next generation optical fiber communication system are met . The optoelectronic integrated device has the advantages of small size , low cost , low loss and stable performance . The optical receiving terminal is a key component in the optical fiber communication system .

The thesis focuses on the structure and process compatibility of photoelectric integrated devices , and carries out the research on the photoelectric integrated devices at the receiving end of the optical fiber communication system . The main innovations and the research results are as follows :

1 . InP - based long - wavelength photodetector and receiver front - end integrated with CMOS integrated circuit are designed . The working principle , frequency response and quantum efficiency of InP - based long wavelength photodetector are studied . The key problem of the compatibility of the package parameters on the response characteristics of integrated devices is analyzed . The optical detector has a response of 0.95A / W at 1550 nm , a 3 - dB frequency response bandwidth of 8.5 GHz , and a capacitance of about 0.42 pF . The integrated receiver front - end bandwidth is about 1.7GHz , and the receiver front end can achieve signal transmission at 3Gbps rate .

2 . The encapsulation of the multi - channel receiving module and its photoelectric integrated compatibility technology are studied . The multi - channel array photoelectric integrated receiving module is designed and fabricated . The influence of the design of the butterfly package on the signal receiving performance of the high - speed receiving component is analyzed theoretically . The 3 - dB frequency response bandwidth of the fabricated array photoelectric integrated receiving component is 5.33GHz and 4.36GHz , respectively . The characteristics of the peripheral driving circuit , the package interface and the test board can be further improved , and the signal receiving at the single channel above 10Gbps can be realized .

3 . A zero bias light detector ( Zero BiasPD ) based on energy band gradient and doping gradient is proposed and prepared . The results show that the frequency response bandwidth of the optical detector is 12.27GHz and 14.9GHz when the reverse bias voltage is 0 V and 3.3 V , respectively . The results show that the frequency response bandwidth of the photodetector at 0V exceeds 80 % of the maximum bandwidth value , and the practical application of the low power optical fiber communication system is met .

4 . The signal transmission characteristics of Pt / Ti / Pt / Au alloy electrode are studied from the transmission coefficient and characteristic impedance of the optimized alloy electrode . The optimal scheme of the electrode material under the specific thickness , the transmission coefficient S21 parameter and the characteristic impedance Zo is studied .

5 . A technology for the integration of InP / Si based on InP / Si dual - base composite substrate is discussed . The wafer cleaning process and bonding technique on the industrial production line are studied . The wafer bonding conditions are analyzed theoretically . The effect of this process on the surface characteristics of the substrate wafer is discussed . The feasibility of the fabrication and fabrication of optoelectronic devices on the industrial production line is discussed and discussed .

【學(xué)位授予單位】：北京郵電大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2014
【分類(lèi)號(hào)】：TN929.11

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