In this paper, different electrical measurement and operation methods of resistive random access memory(RRAM) have been summarized, including voltage sweeping mode(VSM), current sweeping mode(CSM), constant current stress(CCS), constant voltage stress(CVS), rectangular pulse mode(RPM), and triangle pulse mode(TPM). Meanwhile, the effects of these measurement methods on the forming, set, reset and read operation as well as endurance performance have been compared. Finally, their respective contro...

【文章頁數(shù)】：10 頁


本文編號：3912112