With the demand of flat panel display development, utilizing the non-volatile memory devices based on indium-gallium-zinc-oxide（IGZO） film may be integrated with IGZO thin film transistors（TFTs） to accomplish system-on-panel applications. In this work, 1 × 1 m2 via hole structure IGZO based memory device was fabricated and the resistive switching（RS） behavior was investigated. By inserting a nitrogen doping layer IGZO:N by plasma treatment in Pt/IGZO/Ti N device, highly improved RS performance i... 

【文章來源】：Journal of Materials Science & Technology. 2020,49(14)EISCICSCD

【文章頁數(shù)】：6 頁

【文章目錄】：
1. Introduction
2. Experiment
3. Result and discussion
4. Conclusions



本文編號：3537192