A resistance random access memory（RRAM） with a structure of Ag/ZnMn₂O₄/p-Si was fabricated by magnetron sputtering method. Reliable and repeated switching of the resistance of ZnMn₂O₄ fi lms was obtained between two well-defi ned states of high and low resistance with a narrow dispersion and 3V switching voltages. Resistance ratio of the high resistance state and low resistance state was found in the range of around 10³ orders of magnitude a... 

【文章來源】：Journal of Wuhan University of Technology（Materials Science Edition）. 2015,30(06)EISCI

【文章頁數(shù)】：4 頁


本文編號：3207033