Voltage control of magnetism promises great energy efficiency in writing magnetic memory. Here, using Cr/Mo/CoFeB/MgO multilayers stable under high annealing temperatures up to 590°C, we significantly enhance the interfacial crystallinity, thereby the interface-originated perpendicular magnetic anisotropy（PMA）, voltage-controlled magnetic anisotropy（VCMA）, and interface magnetoelectric（ME） effect. High interfacial PMA of 1.35 mJ/m², VCMA coefficient of-138 fJ/（V m）, and interface ME c... 

【文章來源】：Science China（Physics,Mechanics & Astronomy）. 2020,63(07)EISCICSCD

【文章頁數(shù)】：6 頁


本文編號：3141507