High voltage-controlled magnetic anisotropy and interface ma
發(fā)布時(shí)間：2021-04-16 13:20
Voltage control of magnetism promises great energy efficiency in writing magnetic memory. Here, using Cr/Mo/CoFeB/MgO multilayers stable under high annealing temperatures up to 590°C, we significantly enhance the interfacial crystallinity, thereby the interface-originated perpendicular magnetic anisotropy（PMA）, voltage-controlled magnetic anisotropy（VCMA）, and interface magnetoelectric（ME） effect. High interfacial PMA of 1.35 mJ/m2, VCMA coefficient of-138 fJ/（V m）, and interface ME c...
【文章來(lái)源】：Science China（Physics,Mechanics & Astronomy）. 2020,63(07)EISCICSCD
【文章頁(yè)數(shù)】：6 頁(yè)
本文編號(hào)：3141507
【文章來(lái)源】：Science China（Physics,Mechanics & Astronomy）. 2020,63(07)EISCICSCD
【文章頁(yè)數(shù)】：6 頁(yè)
本文編號(hào)：3141507
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